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Towards 0.5 TeraHertz Silicon/Germanium Heterojunction bipolar technology


DOTFIVE is aiming to establish a leadership position for the European semiconductor industry in the area of SiGe HBTs (Silicon-Germanium Heterojunction Bipolar Transistors) for millimeter wave applications, where semiconductor manufacturers like STMicroelectronics and Infineon Technologies are involved. Emerging high-volume millimeter wave applications encompass, for example, 77 GHz automotive radar applications and 60 GHz WLAN (Wireless Local Area Network) communication systems. According to U.S.market research company Strategy Analysts, the market for long-range anti-collision warning systems in cars could increase by more than 65 percent per year until 2011. In addition to these already evolving markets, DOTFIVE technology sets out to be a key enabler for silicon-based millimeter wave circuits penetrating the so-called THz gap, enabling enhanced imaging systems with applications in the security, medical and scientific area.

Beitrag des IHP

In collaboration with IMEC, IHP is working in WP3 on advanced or novel process modules and device architectures that have shown promising initial results. They address key aspects of the HBT in the areas of collector isolation, profile optimization, and emitter/base architectures. The key objective of WP3 is to explore and develop process modules and architectures that have the potential to improve HBT performance well beyond the present state-of-the-art as 0.5 THz.


The Dotfive project is supported by the European Commission through the Seventh Framework Programme for Research and Technological Development.

Ausgewählte Publikationen

  1. H. Rücker, B. Heinemann, R. Barth, J. Bauer, K. Blum, D. Bolze, J. Drews, G. G. Fischer, A. Fox, O. Fursenko, T. Grabolla, U. Haak, W. Höppner, D. Knoll, K. Köpke, B. Kuck, A. Mai, S. Marschmeyer, T. Morgenstern, H. H. Richter, P. Schley, D. Schmidt, K. Schulz, B. Tillack, G. Weidner, W. Winkler, D. Wolansky, H.-E. Wulf, and Y. Yamamototo, "130 nm SiGe BiCMOS Technology with 3.0 ps Gate Delay ", IEDM 2007, p. 651.
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