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Radiation tolerant complementary RF-LDMOS power transistors for 18 V operation


Development of radiation tolerant complementary RF-LDMOS power transistors for a DC/DC buck converter prototype for power management applications in aerospace and nuclear research.


  • Input voltage > 18 V
  • operating frequency > 20MHz
  • efficiency > 90%

Beitrag des IHP

Development of novel radiation tolerant complementary RF-LDMOS power transistors (VDD > 18 V) and its modular integration in IHP’s advanced 0.25µm BCD (Bipolar CMOS DMOS) process technologies. Meet the required levels for radiation hardness in terms of Total Ionizing Dose (TID), Displacement Damage (DD) and Single Event Burn Out (SEB) to enable mixed signal circuit applications in nuclear medicine, aerospace and nuclear research.


The project is funded by the Federal Ministry for Economic Affairs and Energy / ZIM (KF 2123412UW4).


Obtained Device Results, Status 09 2015

Total Ionizing Dose: Drastic reduction of drain leakage for new JIC-NLDMOS MNLDRH42A in comparison to standard NLDMOS NLD2GD42A (Co-60 source).

Single Event Burn Out: Tests were performed with a LET= 67.7 MeVcm2/mg (124Xe 25+ ions) at Cyclotron Resource Centre at Louvain-la-Neuve. The novel JIC-NLDMOS device MNLDRH42A shows a SEB onset voltage of     > 23V. In comparison the standard NLDMOS device NLD2GD42A yields 13 V only.

Das Gebäude und die Infrastruktur des IHP wurden finanziert vom Europäischen Fonds für regionale Entwicklung, von der Bundesregierung und vom Land Brandenburg.