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R2RAM

Radiation Hard Resistive Random-Access Memory

Zielstellung

R2RAM aims to realize a strong methodology for the development and design of a radiation hard non-volatile memory technology by using standard CMOS silicon processing. Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM), which is able to sustain heavy ions and other charged particles.

Beitrag des IHP

  • Radhard RRAM Technology, Architecture and Cell Development
  • Design Enablement Platform
  • Test vehicle fabrication

Finanzierung

H2020 Grant No. 640073

Projektpartner

  • Consorzio Nazionale Interuniversitario Per La Nanoelettronica (Italy)
  • RedCat Devices Srl (Italy)
  • Jyvaskylan Yliopisto (Finland)
Das Gebäude und die Infrastruktur des IHP wurden finanziert vom Europäischen Fonds für regionale Entwicklung, von der Bundesregierung und vom Land Brandenburg.