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  • Publikationen 2020

Publikationen 2020

seit Januar 2020

(1) Investigation of the Oxidation Behavior of Graphene/Ge(001) Versus Graphene/Ge(110) Systems
F. Akhtar, J. Dabrowski, M. Lisker, Y. Yamamoto, A. Mai, Ch. Wenger, M. Lukosius
ACS Applied Materials & Interfaces 12(2), 3188 (2020)
DOI: 10.1021/acsami.9b18448, (Graphen)
The oxidation behavior of Ge(001) and Ge(110) surfaces underneath the CVD grown graphene films has been investigated experimentally and interpreted on the basis of ab initio calculations. Freshly grown samples were exposed to air for more than seven months and periodically monitored by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and Raman spectroscopy. The oxidation of Ge(110) started with incubation time of several days, during which the oxidation rate was supposedly exponential. After an ultrathin oxide grew, the oxidation continued with a slow but constant rate. No incubation was detected for Ge(001). The oxide thickness was initially proportional to the square root of time. After two weeks the rate saturated at a value fourfold higher than that for Ge(110). We argue that after the initial phase, the oxidation is limited by the diffusion of oxidizing species through atomic-size openings at graphene domain boundaries and is influenced by the areal density and by the structural quality of the boundaries, whereby the latter determines the initial behavior. Prolonged exposure affected the surface topography and reduced the compressive strain in graphene, from ~ –0.15% to ~ 0.0% on Ge(001) and from ~ –1% to ~ –0.5% on Ge(110). In the last step, both the air-exposed samples were annealed in vacuum at 850⁰C. After annealing, the oxidation of Ge substrates through graphene was reversed by removing the oxygen atoms and thus restoring the original status of graphene/Ge systems. These findings might constitute an important step towards further optimization of graphene/Ge systems.

(2) Characterization and Tests of Different Mach-Zehnder Silicon Photonic Modulator Configurations
D. Badoni, V. Bonaiuto, M. Casalboni, F. De Matteis, G. Di Giuseppe, L. Frontini, R. Gunnella, V. Liberali, A. Mai, G. Paoluzzi, P. Prosposito, A. Salamon, G. Salina, F. Sargeni, S. Schrader, A. Stabile, P. Steglich
Materials Research Proceedings 16, 1 (2020)
DOI: 10.21741/9781644900710-1

(3) Thermo-Mechanical Modeling and Experimental Validation of an Uncooled Microbolometer
C. Baristiran Kaynak, A. Göritz, E.C. Durmaz, M. Wietstruck, E. Onat, A.S. Ozcan, E.R. Turkoglu, Y. Gurbuz, M. Kaynak
Proc. 20th IEEE Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2020), 57 (2020)
(IHP-Sabanci Joint Lab)

(4) A Switchless SiGe BiCMOS Bidirectional Amplifier for Wideband Radar Applications
C. Caliskan, M. Yazici, M. Kaynak, Y. Gurbuz
IEEE Transactions on Circuits and Systems II 1 (2019)
DOI: 10.1109/TCSII.2019.2945862
This paper presents a switchless bidirectional amplifier (BDA) with 7-to-30 GHz of bandwidth (BW) and 11.2 dB of peak gain. Common impedance matching networks (IMN) are utilized for both directions, to form a low power and compact amplification stage. It achieves + 0.58 dB/BW of a gain slope, which reaches its peak value at 21 GHz. Its output-referred 1-dB compression point (OP1dB) and group delay (GD) are measured as -2.5 dBm and 41 psec. while having ± 1.5 dB and ± 9.1 psec. variation over the defined BW. Moreover, the BDA dissipates 14 mW of power in 0.42 mm2 of area (including pads). The measurement results demonstrate that the BDA is compatible with the wideband transceiver systems. To the best of the authors’ knowledge, the presented design has the best operating bandwidth with a positively sloped gain without sacrificing from the area, power consumption and other remaining RF features such as noise figure (NF).

(5) An Approach to Verify Electro-Thermal Material Stack-Up File Based on Modeling of Poly Resistors with Different Geometry
A. Datsuk, M. Kaynak, A. Balashov, W. Wichmann, F. Vater, V. Timoshenkov
Proc. IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus 2020), 2123 (2020)
DOI: 10.1109/EIConRus49466.2020.9038937, (Design Kit)

(6) Development of the Thin TOF-PET Scanner based on Fast Monolithic Silicon Pixel Sensors
D. Hayakawa, G. Iacobucci, L. Paolozzi, P. Valerio, E. Ripiccini, M. Benoit, D. Ferrere, O. Ratib, M. Weber, D. Forshaw, A. Miucchi, Y. Bandi, R. Cardarelli, H. Rücker, M. Kaynak
Nuclear Instruments and Methods in Physics Research Section A 958, 162433 (2020)
DOI: 10.1016/j.nima.2019.162433

(7) Influence of Specific Forming Algorithms on the Device-to-Device Variability of Memristive Al-Doped HfO2 Arrays
M.K. Mahadevaiah, E. Perez, Ch. Wenger
Journal of Vacuum Science and Technology B 38(1), 013201 (2020)
DOI: 10.1116/1.5126936, (NeuroMem)
In this work, the influence of specific switching algorithms on device-to-device (D2D) variability of the forming process, in an integrated Al-doped HfO2 1T-1R 4 kbit RRAM array is investigated. The resistive devices are programmed by using two different algorithms: the incremental step pulse and verify algorithm (ISPVA) at different temperatures and the constant amplitude pulse and verify algorithm (CAPVA) at different voltage amplitudes. The stabilized forming currents of both algorithms are compared in terms of their distributions, yields and dispersions. The D2D distributions of the forming voltages of ISPVA and the forming times of CAPVA are fitted by Weibull distributions. The obtained Weibull parameters provide a link with the statistics governing the process. Finally, we discuss the importance of the ISPVA, CAPVA, temperature and voltage amplitudes to improve the reliability of the forming process.

(8) A Physical and Versatile Aging Compact Model for Hot Carrier Degradation in SiGe HBTs under Dynamic Operating Conditions
C. Mukherjee , F. Marc, M. Couret, G.G. Fischer, M. Jaoul, D. Celi, K. Aufinger, T. Zimmer, C. Maneux
Solid-State Electronics 163, 107635 (2020)
DOI: 10.1016/j.sse.2019.107635, (Taranto)
This paper presents a new physics-based compact model implementation for interface state creation due to hot-carrier degradation in advanced SiGe HBTs. This model accounts for dynamic stress bias conditions through a combination of the solution of reaction-diffusion theory and Fick’s law of diffusion. The model reflects transistor degradation in terms of base recombination current parameters of HiCuM compact model and its accuracy has been validated against results from long-term aging tests performed close to the safe-operating-areas of various HBT technologies.

(9) A Physical and Versatile Aging Compact Model for Hot Carrier Degradation in SiGe HBTs under Dynamic Operating Conditions
C. Mukherjee , F. Marc, M. Couret, G.G. Fischer, M. Jaoul, D. Celi, K. Aufinger, T. Zimmer, C. Maneux
Solid-State Electronics 163, 107635 (2020)
DOI: 10.1016/j.sse.2019.107635, (SIGEREL)
This paper presents a new physics-based compact model implementation for interface state creation due to hot-carrier degradation in advanced SiGe HBTs. This model accounts for dynamic stress bias conditions through a combination of the solution of reaction-diffusion theory and Fick’s law of diffusion. The model reflects transistor degradation in terms of base recombination current parameters of HiCuM compact model and its accuracy has been validated against results from long-term aging tests performed close to the safe-operating-areas of various HBT technologies.

(10) Direct Observation and Simultaneous use of Linear and Quadratic Electro-Optical Effects
P. Steglich, Ch. Mai, C. Villringer, A. Mai
Journal of Physics D: Applied Physics 53(12), 125106 (2020)
DOI: 10.1088/1361-6463/ab6059, (HOPBIT)

(11) Full-Wave RF Modeling of a Fan-Out Wafer-Level Packaging Technology Based on Al-Al Wafer Bonding
M. Stocchi, M. Wietstruck, S. Schulze, C. Zhibo, S. Tolunay Wipf, M. Kaynak
Proc. 20th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SIRF 2020), 60 (2020)
DOI: 10.1109/SIRF46766.2020.9040180

(12) Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach-Zehnder Modulator in a Si/SiGe Integrated Photonics Platform
G.N. Tzintzarov, A. Ildefonso, P.S. Goley, M. Frounchi, D. Nergui, S.G. Rao, J. Teng, J. Campbell, A. Khachatrian, S.P. Buchner, D. McMorrow, J.H. Warner, M. Kaynak, L. Zimmermann, J.D. Cressler
IEEE Transactions on Nuclear Science 67(1), 260 (2020)
DOI: 10.1109/TNS.2019.2945860

(13) Contact Resistance and Mobility in Back-Gate Graphene Transistors
F. Urban, G. Lupina, A. Grillo, N. Martucciello, A. Di Bartolomeo
Nano Express 1(1), 010001 (2020)
DOI: 10.1088/2632-959X/ab7055
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. High contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate back-gate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature.We apply the transfer length method and the y-function method showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of carrier mobility dependence on the gate-voltage. We find that the gate voltage modulates both the contact and the channel resistance in a similar way but does not change the carrier mobility. We also show that raising the temperature lowers the carrier mobility, has a negligible effect on the contact resistance, and can induce a transition from a semiconducting to a metallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally, we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrier field-effect mobility and that a competitive contact resistance as low as 700 Ω·μm can be achieved by the zig-zag shaping of the Ni contact.

(14) PI-MOCVD Technology of (La, Sr)(Mn, Co)O3: From Epitaxial to Nanostructured Films
M. Vagner, V. Plausinaitiene, R. Lukose, S. Kersulis, M. Talaikis, B. Knasiene, S. Stanionyte, V. Kubilius, K. Motiejuitis, Z. Saltyte, G. Niaura, E. Naujalis, N. Zurauskiene
Surface and Coatings Technology 385, 125287 (2020)
DOI: 10.1016/j.surfcoat.2019.125287

(15) Nonlinear Optical Characterization of CsPbBr3 Nanocrystals as a Novel Material for the Integration into Electro-Optic Modulators
F. Vitale, F. De Matteis, M. Casalboni, P. Prosposito, P. Steglich, V. Ksianzou,C. Breiler, S. Schrader, B. Paci, A. Generosi
Materials Research Proceedings 16, 27 (2020)
DOI: 10.21741/9781644900710-4

(16) Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe2 Channel Grown by Molecular Beam Epitaxy
K. Xiong, M. Hilse, L. Li, A. Göritz, M. Lisker, M. Wietstruck, M. Kaynak, R. Engel-Herbert, A. Madjar, J.C.M. Hwang
IEEE Transactions on Electron Devices 67(3), 796 (2020)
DOI: 10.1109/TED.2020.2966434
This article is the first report of MOSFETs fabricated on PtSe2 grown by molecular beam epitaxy. Both material synthesis and device fabrication are done below 450 °C—the thermal budget ofCMOS back-end-of-line processes. The MOSFETs are batch-fabricated by a CMOScompatible process on 200-mm-diameter Si substrates prepared by a state-of-the-art BiCMOS foundry. With three monolayers of PtSe2, an n-type MOSFET exhibits a current ON/OFF ratio of 43 at room temperature, which increases to 1600 at 80 K. These results are among the best of transistors based on synthesized PtSe2. Despite the thin PtSe2 layer, doping by contact bias lowers the contact resistance significantlyand boosts the current capacity and the ON/OFF ratio. Temperature-dependent current-voltage characteristics imply a bandgap of approximately 0.2 eV, which confirms that the semiconductor-semimetal transition of PtSe2 is not as abrupt as originally predicted. Better MOSFET performancecan be expectedby growing even thinnerPtSe2 uniformlyand by thickeningthe PtSe2 in the contact regions.

(17) Ge/SiGe Multiple Quantum Well Fabrication by Reduced-Pressure Chemical Vapor Deposition
Y. Yamamoto, O. Skibitzki, M.A. Schubert, M. Scuderi, F. Reichmann, M.H. Zoellner, M. De Seta, G. Capellini, B. Tillack
Japanese Journal of Applied Physics Pt. 1 59, SGGK 10 (2020)
DOI: 10.7567/1347-4065/ab65d0, (FLASH)

(18) A Wide Locking-Range, Low Phase-Noise and High Output Power D-Band SiGe PLL
S. Zeinolabedinzadeh, I. Song, M. Kaynak, J.D. Cressler
Proceedings of the IEEE
Proc. 20th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2020), 35 (2020)

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