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RF LDMOS Integration

Laterally Diffused MOS transistors for RF and smart power

Zielstellung

Demonstration of a modular low cost integration of Laterally Diffused MOS transistors (LDMOS), capable for RF and smart power (Vdd 42 V) applications, into a 0.25 µm CMOS/SiGe:C BICMOS technology platform.

Motivation

Complementary LDMOS transistors integrated into a base CMOS platform are key enablers for cost efficient SOC solutions including RF power amplifiers for wireless applications, highly integrated power management and high voltage IO circuits. Emerging multimedia applications require computing power with a mixed signal capability in order to manage diverse peripherals such as TFT-LCDs, lightings, cameras and audio parts. LDMOS devices with blocking voltages of 70 V are promising candidates for the emerging applications of the next generation 42V automotive power net. A high RF performance for the high voltage devices corresponds to a high slew rate of the power transistors in the output stage of DC/DC converter, which enables both a high efficiency and a very small inductivity capable for integrating into the same IC package.

Das Gebäude und die Infrastruktur des IHP wurden finanziert vom Europäischen Fonds für regionale Entwicklung, von der Bundesregierung und vom Land Brandenburg.