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NANETT

Kompetenznetzwerk für Nanosystemintegration – Anwendung von Nanotechnologien für energieeffiziente Sensorsysteme

Zielstellung

The main objective is to develop new technologies for the fabrication of novel RF components with increased functionality for mobile communication systems and energy-efficient sensor networks. A monolithic integration of NEMS/MEMS is advantageous over any hetero-integration. This offers the possibility for new system-on chip designs (SOC) in terms of energy-efficiency, high-performance and reconfigurability. Together with new 3-D integration concepts, the hybrid integration of additional components will be investigated to extend the overall system functionality. This will be fundamental for the realization of highly-integrated and cost-efficient nano- and microsystems for energy-efficient sensor networks.

Beitrag des IHP

The goal is to develop new receiver concepts with reduced power consumption for low-power applications. To demonstrate the concept, a wake-up receiver (WuRx) will be developed to increase the stand-by time of sensor nodes and allow an energy-self-sufficient operation. Technology and component development for RF- and mm-wave applications will be required and the SiGe:C BiCMOS process will be enhanced by three different additional modules. A monolithic integration of NEMS/MEMS should show the feasibility of integrating MEMS components in a BiCMOS process with high yield, uniformity and repeatability. New technology sequences like localized backside-etching (LBE) should show that the performance of passive RF-components can be increased dramatically. A module with additional Cu and BCB layers on top of IHPs BEOL will be developed together with Fraunhofer IZM Berlin to integrate high-Q passive components like antennas and inductors.

Finanzierung

The nanett project is funded by the BMBF – Bundesministerium für Bildung und Forschung.

Ausgewählte Publikationen

  1. M. Kaynak, M. Wietstruck, R. Scholz, J. Drews, R. Barth, K.-E. Ehwald, A. Fox, U. Haak, D. Knoll, F. Korndörfer, S. Marschmeyer, K. Schulz, C. Wipf, D. Wolansky, B. Tillack, K. Zoschke, T. Fischer, Y.S. Kim, W.-G. Lee, J.W. Kim, “BiCMOS Embedded RF-MEMS Switch for Above 90GHz Applications Using Backside Integration Techniques”, Proc. International Electron Devices Meeting, (IEDM 2010), 832(2010)

  2. Kaynak, M. Wietstruck, W. Zhang, J. Drews, R. Scholz, D. Knoll, F. Korndörfer, C. Wipf, K. Schulz, M. Elkhouly, K. Kaletta, M. v. Suchodoletz, K. Zoschke, M. Wilke, O. Ehrmann, V. Mühlhaus, G. Liu, T. Purtova, A. C. Ulusoy, H. Schumacher and B. Tillack, “RF-MEMS Switch Module in a 0.25µm BiCMOS Technology”, published SiRF 2012

  3. M. Wietstruck, M. Kaynak, W. Zhang, S. Kurth, B. Erler, B. Tillack, “Material Properties Characterization of BiCMOS BEOL Metal Stacks for RF-MEMS Applications”, Proc. 12th International Symposium on RF MEMS and RF Microsystems (MEMSWAVE 2011)
Das Gebäude und die Infrastruktur des IHP wurden finanziert vom Europäischen Fonds für regionale Entwicklung, von der Bundesregierung und vom Land Brandenburg.