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NANOTEC

Nanostructured materials and RF-MEMS RFIC/MMIC technologies for highly adaptive and reliable microwave to mm-wave systems

Zielstellung

  • Development of future smart systems for communication and sensing by achieving autonomous and self-reconfigurable operations in order to achieve real-time and efficient performance self-optimization
  • Development of new approaches for future generation of highly-efficient systems with reduced size, weight, power consumption and costs by integrating T/R modules together with smart active and reflect array antennas
  • Integration of RF-MEMS switches in GaN and SiGe BiCMOS technology as a complementary technology to achieve re-configurability for future communication and security systems due to their high RF performance (insertion loss and isolation), high power handling, low power consumption, high linearity and high level of integration
  • Bringing together advanced microwave functions of WBG semiconductors, SiGe BiCMOS and RF-MEMS switches for radar and passive/active imaging applications

Beitrag des IHP

  • Development of RF-MEMS switch process in IHP’s SG13 BiCMOS process
  • Fabrication of high performance and reliable RF-MEMS switch and SPDTs for 94 and 140 GHz passive and active imaging systems
  • Chipset fabrication for two different demonstrators (passive imaging system at 94 GHz and active imaging system at 140 GHz) using both IHP’s 0.25 and 0.13 µm high performance SiGe BiCMOS technologies 

Finanzierung

NANOTEC project is funded by the FP7-ICT-2010-7 Theme 3 under the Gant Agreement N° 288531.

Projektpartner

  • Thales Research and Technology TRT France (Coordinator)
  • EADS Deutschland GmbH EADS Germany
  • IHP-Microelectronics GmbH IHP Germany
  • Silicon Radar GmbH SiR Germany
  • FOI FOI Sweden
  • Thales AIR Systems S.A TR6 France
  • Uppsala University UU Sweden
  • COVENTOR SARL COV France
  • Fraunhofer Institute IZM IZM Germany
  • OMMIC SAS OMMIC France
  • Alfa Imaging S.A ALFA Spain
  • Universität Ulm UULM Germany
  • National Research and Development Institute for Microtechnologies IMT Romania
  • Foundation for Research & Technology - Hellas FORTH Greece
  • TopGaN Ltd. TOPGAN Poland
  • SHT Smart High-Tech AB SHT Sweden
  • National & Kapodistrian University of Athens NKUA Greece

Ausgewählte Publikationen

(1) M. Kaynak, V. Valenta, H. Schumacher, B. Tillack, „MEMS Module Integration into SiGe BiCMOS Technology for Embedded System Applications“, Proc. IEEE Bipolar / BiCMOS Circuits and Technology Meeting, (BCTM 2012), 49 (2012)

(2) M. Kaynak, M. Wietstruck, W. Zhang, J. Drews, R. Barth, D. Knoll, F. Korndörfer, R. Scholz, K. Schulz, Ch. Wipf, B. Tillack, K. Kaletta, M. v. Suchodoletz, K. Zoschke, M. Wilke, O. Ehrmann, A.C. Ulusoy, T. Purtova, G. Liu, H. Schumacher, „Packaged BiCMOS Embedded RF-MEMS Switches with Integrated Inductive Loads“, Proc. International Microwave Symposium (IMS 2012), (2012)

(3) M. Wietstruck, M. Kaynak, W. Zhang, B. Tillack, „Electro-Thermo-Mechanical Analysis of a BiCMOS Embedded RF-MEMS Switch for Temperature from -55°C to 125 °C“, Proc. 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2013), 18 (2013)

Das Gebäude und die Infrastruktur des IHP wurden finanziert vom Europäischen Fonds für regionale Entwicklung, von der Bundesregierung und vom Land Brandenburg.