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SciFab

"Sci"ence "Fab" for heterointegrated InP / BiCMOS high-frequency systems

Zielstellung

  • Monolithic integration of highly complex analogue and mixed-signal electronics in BiCMOS with high RF output power InP DHBT stages
  • Targeted for applications in sub-mm-wave radar, communication, spectroscopy, and security systems
  • Combination of the best of both worlds: high complexity BiCMOS with high-power InP DHBT technology
  • Substrate transfer process by aligned permanent wafer bonding process with benzocyclobutene as bonding agent and subsequent InP substrate remove
  • Low-loss interconnects between BiCMOS and InP DHBT subcircuits in monolithic wafer-scale integration
  • Reduced size, weight, and power compared to existing integration technologies
  • Early access to this novel technology is given in 2015 to Beta test customers

Beitrag des IHP

  • IHP’s SG25H1 technology as SiGe BiCMOS base process
  • Some modifications of the SiGe BiCMOS back-end-of-line were necessary to make the bond process feasible. One is the planarization of the topmost metal layer by a thick silicon dioxide deposition with a subsequent CMP planarization
  • Back side alignment marks on the Si wafer were indispensable in our bond setup
  • Since the bonding and the post bonding manufacturing is done in a three inch lab a cutting procedure is required
  • InP device models are introduced in to IHPs design kit for modeling of hetero-integrated circuits

Finanzierung

Senatsausschuss für Wettbewerb der Leibniz-Gemeinschaft

SAW-2013-IHP-3 278

Projektpartner

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik FBH

Ausgewählte Publikationen

(1) T. Jensen, T. Al-Sawaf, M. Lisker, S. Glisic, M. Elkhouly, T. Kraemer, I. Ostermay, Ch. Meliani, B. Tillack, V. Krozer, W. Heinrich, “A 164 GHz Hetero-Integrated Source in InP-on-BiCMOS Technology”, Proc. European Microwave Week (EuMW 2013), 244 (2013)

(2) T. Kraemer, I. Ostermay, T. Jensen, T. Keinicke Johansen, F.-J. Schmueckle, A. Thies, V. Krozer, W. Heinrich, O. Krueger, G. Traenkle, M. Lisker, A. Trusch, P. Kulse, B. Tillack, “InP-DHBT-on-BiCMOS Technology With fT/fmax of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave Sources”, IEEE Transactions on Electron Devices 60(7), 2209 (2013)

(3) V. Krozer, T. Jensen, T. Krämer, I. Ostermay, F.J. Schmückle, O. Krüger, W. Heinrich, M. Lisker, B. Tillack, Ch. Meliani, “InP on BiCMOS Technology Platform for Millimeter-Wave and THz MMIC”, Proc. Millimeter Waves and THz Technology Workshop (UCMMT 2013), (2013)  

(4) I. Ostermay, T. Krämer, F.-J. Schmückle, O. Krüger, V. Krozer, W. Heinrich, M. Lisker, A. Trusch, E. Matthus, Y. Borokhovych, B. Tillack, “200 GHz Interconnects for InP-on-BiCMOS Integration”, Proc. International Microwave Symposium (IMS 2013), (2013)  

(5) M. Hossain, T.Kraemer, I. Ostermay, T. Jensen, B. Janke,Y. Borokhovych, M. Lisker, S. Glisic, M. Elkhouly, “A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology”, IEEE Microwave and Wireless Components Letters 24(7), 469 (2014)

(6) T. Jensen, T. Al-Sawaf, M. Lisker, S. Glisic, M. Elkhouly, T. Kraemer, I. Ostermay, Ch. Meliani, B. Tillack, V. Krozer, W. Heinrich, “Millimetre-Wave Hetero-Integrated Sources in InP-on-BiCMOS Technology”, International Journal of Microwave and Wireless Technologies 6(3/4), 225 (2014)

(7) M. Lisker, A. Trusch, A. Krüger, M. Fraschke, P. Kulse, Y. Borokhovych, B. Tillack, I. Ostermay, T. Krämer, A. Thies, O. Krüger, F.-J. Schmückle, V. Krozer, W. Heinrich, “InP-Si BiCMOS Heterointegration Using a Substrate Transfer Process”, ECS Journal of Solid State Science and Technology 3(2), 17, (2014)

(8) I. Ostermay, A. Thies , T. Kraemer, W. John, N. Weimann, F.-J. Schmückle, S. Sinha, V. Krozer, W. Heinrich, M. Lisker, B. Tillack, O. Krüger, “Three-Dimensional InP-DHBT on SiGe-BiCMOS Integration by Means of Benzocyclobutene based Wafer Bonding for MM-Wave Circuits”, Microelectronic Engineering 125, 38 (2014)

Das Gebäude und die Infrastruktur des IHP wurden finanziert vom Europäischen Fonds für regionale Entwicklung, von der Bundesregierung und vom Land Brandenburg.