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  • Institutskolloquien 2012

Institutskolloquien 2013

18.  Three-Dimensional Heteroepitaxy on Deeply Patterned Silicon
       Substrates

       PD Dr. Hans von Känel, Laboratorium für Festkörperphysik, ETH Zürich,
       09.12.2013

 

17.  Pseudomorphic Integration of III-V Semiconductors on Silicon: Recent
       Results at FOTON Laboratory

       PhD Charles Cornet, O. Durand, Université Européenne de Bretagne,
       Rennes, France, 29.11.2013

 

16. Introduce Latest Research Topics at University of Auckland Focusing 
       on: 
Wireless Sensor Node Design, Customised IPv6 Protocol for
       Sensor Networks,
Formal Language for Sensor Networks and others

       Dr. Kevin Wang, University of Auckland, Department of Electrical and
       Computer Engineering, Australia 27.11.2013

 

15.  Perfectly Site-Controlled Ge Quantum Dots: Fabrication Conditions and
       Optical Properties

       Dr. Martyna Grydlik, IFW Dresden, Germany, 17.10.2013

 

14.  Hybrid and ordered SiGe Nanostructures

       Dr. Moritz Brehm, IFW Dresden, Germany, 17.10.2013 

 

13.  Transmission Electron Microscopy Study on Instabilities in Epitaxial 
       Semiconductor Heterostructures

       Dr. Achim Trampert, Paul-Drude-Institute for Solid State Electronics, Berlin,
       Germany, 12.09.2013

 

12.  Direct Observation of Carrier Trapping Processes on Fe Impurities in
       mc-Si Solar Cells

       Prof. Yutaka Yoshida, Shizuoka Institute of Science and Technology,
       Fukuroi-city, Shizuoka, Japan, 10.09.2013

 

11.  Bioanalytics using Single Plasmonic Nanostructures

       PD Dr. Wolfgang Fritzsche, Institute of Photonic Technology (IPHT),
       Nanobiphotonics Department, Jena, Germany, 26.08.2013

 

10.  Synthesis and Characterization of High-k Materials and embedded
       Nanocrystals  for Electronic and Photonic Applications

       Prof. Johannes Heitmann, TU Bergakademie Freiberg, Institut für
       Angewandte Physik, Freiberg, Germany, 08.08.2013 

 

09.  A Short History of Silicon Crystal Growth in Half Century,

       Observations of Vacancies on Growth Interface and Interstitials Inside
       Crystal by Detaching Growing Crystals from Silicon Melt

       Dr. Takao Abe, Shin-Etsu Handotai Japan, 08.08.2013 

 

08. Atomic and Molecular Scale Structures on Silicon Surfaces

       Dr. Steven R. Schofield, London Centre for Nanotechnology, and
       Department of Physics and Astronomy University College London, UK,
       11.07.2013

  

07.  Research and Teaching Activities of the VLSI Engineering and Design
       Automation Division

       Prof. Wieslaw Kuzmicz, Institute of Microelectronics and Optoelectronics
       Warsaw University of Technology, Poland, 08.05.2013

 

06.  Working with Light: Application Driven MEMS Based Spatial and
       Temporal Modulation
       Prof. Harald Schenk, Fraunhofer Institute for Photonic Microsystems
       Dresden, Germany, 29.04.2013

 

05.   Biosensing Challenges in Modern Bioprocess Development: From High 
        Throughput to Mobile Sensor Solutions
        Prof. Dr. Peter Neubauer, Institut für Biotechnologie der TU Berlin
        und Joint Lab Bioelectronics, Germany, 25.03.2013 

 

04.  Advanced Thin Film Characterization by  X-Ray and Energy-Dispersive
       Synchrotron Diffraction

       Prof. Dr. Christoph Genzel, Helmholtz-Zentrum Berlin, Germany,
       04.03.2013 

 

03.  Electronic Properties of Oxygen Vacancies in HfO2 from First
       Principles
       Dr. Xavier Cartoixà, Departament d’Enginyeria Electrònica, Universitat
       Autònoma de Barcelona, Spain, 22.01.2013 

 

02. Unipolar Reset and Atomic-Size Effects in the Conducting Filament of
      RRAM
      Prof. Jordi Suñé, Department d’Enginyeria Electrònica, Universitat
      Autonoma de Barcelona, Bellaterra, Spain, 22.01.2013 

 

01.  Strain Engineering for Optical Gain in Germanium

       Prof. Philippe Boucaud, Institut d'Electronique Fondamentale,
       CNRS-Univ Paris-Sud Orsay, France, 14.01.2013 

 

 

 

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