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  • DC/CV Parameter Testing
DC/CV Parameter Testing in Cleanroom and Labs

Objective

SPC (statistical parameter control), Reliability testing on wafer (-60°C to 125°C) and at packaged devices, Yield Improvement, failure analysis, Prototype device developments (radiation tolerant RF power devices: MOS, LDMOS, LDHBT), comprehensive characterization of interface and bulk properties of the MOS system, Electrostatic discharge characterization (ESD-testing).

Methods

  • DC/CV and pulsed-signal techniques using single probes, wedges and probecards
  • Simmultaneous HF/LF MOS-CV techniques in non-steady state non-equilibrium
  • Ring oscillator measurements for determining of gate delays is sub ps range
  • Transmission Line Pulser (TLP) for ESD testing 1/f noise measurements

Equipment

  • DC-Parameter Testers (Keithley S630) with full automatic 8" wafer probers in cleanroom and labs
  • DC/CV Parameter Test Systems (Agilent 4156C, 4294A) with semi-automatic 8" and 12" wafer probers
  • Cryogenic probe station for DC-, RF- and S-Parameter measurements, 4" chuck, T down to liquid He-temperature
The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.