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Fastest Si-based transistor in the world

The cross section on the left shows a silicon-germanium heterobipolar transistor (SiGe HBT) of the latest generation, recorded by a transmission electron microscope (TEM). The measurement curves on the right are used to determine the transit frequency, fT, and the maximum oscillation frequency, fmax. © IHP 2016

The cross section on the left shows a silicon-germanium heterobipolar transistor (SiGe HBT) of the latest generation, recorded by a transmission electron microscope (TEM). The measurement curves on the right are used to determine the transit frequency, fT, and the maximum oscillation frequency, fmax. © IHP

07.12.2016
IHP presents the fastest silicon-based transistor in the world. Contribution at the renowned semiconductors conference IEDM in San Francisco.

Scientist Dr. Bernd Heinemann of IHP presented results on silicon-germanium heterobipolar transistors (SiGe HBTs) developed in Frankfurt (Oder) on the “International Electron Devices Meeting” (IEDM) in San Francisco. His contribution titled “SiGe HBT with fT/fmax of 505 GHz/720 GHz “ presents speed parameters that set new standards for silicon transistors. These research results form the conclusion of the EU-funded project DOTSEVEN which is a merger of IHP, Infineon and twelve other project partners.

 

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The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.