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  • Seminars 2016

Seminars 2016

14. Application of Formal Methods to the Security Analysis and Test of Digital Circuits

      Dr. Matthias Sauer, Ludwigs-Universität Freiburg, Germany, 13.12.2016


13. Building From The Nanoscale: Electronics and Mechanics with Single Molecules

      Dr. Francesca Moresco, Institute for Materials Science, Technische Universität Dresden, Germany,


12. Deep Learning on Embedded Systems for Face Identification and Eye Tracking
       Prof. Dr. Tobias Scheffer, Universität Potsdam, Germany, 25.10.2016


11. Design of Millimeterwave Multifunction Integrated Circuits for Data Communication and
      Remote Sensing Applications

      Prof. Herbert Zirath, Chalmers University of Technology Göteborg, Sweden, 20.10.2016


10. Memristive Devices for Analogue Neuromorphic Circuits
       Dr. habil. Martin Ziegler, Technische Fakultät der Christian-Albrechts-Universität zu Kiel, 23.09.2016


09. Heterogeneously Integrated Membrane Lasers for Datacom and Computercom Applications
      Dr. Shinji Matsuo , NTT Device Technology Laboratories and Nanophotonics Center, NTT Corporation,


08. Coherent Optoelectronics with Single Quantum Dots

      Prof. Dr. Artur Zrenner, Universität Paderborn und Center for Optoelectronics and Photonics Paderborn
     (CeOPP), 16.09.2016


07. Epitaxial Graphene on SiC

      Prof. Dr. Thomas Seyller, TU Chemnitz, Institut für Physik, 13.09.2016


06. From Synchrotron into the Lab - the Transfer of Modern X-Ray Methods from Synchrotron
      Sources into the BLiX-Laboratory

      Prof. Birgit Kanngießer, Institute for Optics and Atomic Physics, Technical University Berlin, 13.05.2016


05. Run Time Adaptive Processor Architectures

      Prof. Michael Hübner, Universität Bochum, Germany, 18.04.2016


04. Monolithic Integration of  Quantum Dot Lasers on Silicon Substrates

      Prof. Alwyn Seeds, Department of Electronic and Electrical Engineering University College London, UK,


03. Express Service for HDI Printed Circuit Boards

      Burkhard Nissen, PCB Express GmbH, München, Germany, 09.03.2016


02. Successive Agglomeration of Cu Atoms in Si: Early Stages of Transition Metal (TM)

      Prof. Dr. Jörg Weber, Fakultät Mathematik und Naturwissenschaften, Institut für Angewandte Physik
      Technische Universität Dresden, Germany, 16.02.2016 

01.  High Yield, Low Variability – Employing Silicon CMOS Technology for the Realization of Spin

       Dr. rer. nat. Lars R. Schreiber, II. Physikalisches Institut der RWTH Aachen University, Germany

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.