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  • References


[1] I.M. Ross, Bell Labs Technical Journal, Autumn, 3 (1977).

[2] Y. Taur IBM J. Res. & Dev. 46, 2002, 213

[3] B. Doyle, R. Arghavani, D. Barrage, S. Datta, M. Doczy, J. Kavalieros, A. Murthy, R. Chau, Intel Technology Journal 6, 42 (2002).

[4] H. R. Huff, D. C. Gilmer High Dielectric Constant Materials, Springer-Berlin, 2005

[5] Rainer Waser, Nanoelectronics and Information Technology – Advanced Electronic Materials and Novel Devices 2nd Edition, Wiley VCH, 2005.

[6] Takashi Hori, Gate Dielectrics and MOS ULSI – Principles, Technologies and Applications, Springer Series in Electronics and Photonics Volume 34, edited by I.P. Kaminow, W. Engl and T. Sugano, 1996.

[7] A.K. Jonscher, Dielectric Relaxation in Solids, Chelsea Dielectric Press, London, 1983

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.