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DRAM

DRAM

High-k dielectrics for future DRAM cell technologies

Objective

Since the 4-Mbit DRAM generation, a sufficient amount of storage charge has been realized by fabricating three-dimensional (3D) memory cell concepts. Future Gbit deep-trench DRAM generations will require the integration of advanced dielectrics of high dielectric constant (k) and extremely low leakage current levels.

IHP`s Contribution

Development of Praseodymium- and Hafnium-based high-k dielectric films for future deep-trench DRAM generations.

Funding

This so-called MEGAEPOS project is funded by BMBF.

Project Partners

  • Qimonda Dresden,
  • PDI Berlin,
  • TU Darmstadt,
  • LU Hannover,
  • AMD Dresden,
  • AMO Aachen,
  • NaMLab gGmbH Dresden,
  • W. C. Heraeus GmbH Hanau

Selected Publications

  • G. Kozlowski, et al., Simulation of trap assisted leakage through thin dielectrics, IOP Conf. Series: Materials Science and Engineering 8 (2010) 012029 
  • G. Lupina, et al., Dielectric constant and leakage of BaZrO3 films, Appl. Phys. Lett. 94, 152903 (2009)
  • G. Lupina, et al., Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications, Microelectronic Engineering, 86, 1842 (2009)
  • G. Lupina, et al., Perovskite BaHfO3 Dielectric Layers for Dynamic Random Access Memory Storage Capacitor Applications, Advanced Engineering Materials, 4, 259-264 (2009)
  • J. Dabrowski, et al., Group-II Hafnate, Zirconate, and Tantalate High-k Dielectrics for MIM Applications: The Defect Issue, ECS Transactions, 25, 219 (2009)
  • J. Dabrowski, et al., Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin-Films, J. Electrochem. Soc. 155 G97 (2008)
  • G. Lupina, et al., Dielectric and structural properties of thin SrHfO3 layers on Ti, Appl. Phys. Lett. 93, 252907 (2008)
  • G. Lupina, et al., Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications, Appl. Phys. Lett. 92, 062906 (2008)
  • T. Schroeder, et al., SR-XPS study on the interface chemistry of high-k PrxAl2-xO3 (x = 0 to 2) dielectrics on TiN for DRAM applications, Journal of Applied Physics, 101, 014103 (2007)
  • G. Lippert, et al., Morphology and composition of Praseodymium-based high-k materials and their relevance to dielectric properties of thin films, ECS Trans. 6, 773 (2007)

External Links

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.