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DRAM

[1] Rainer Waser, Nanoelectronics and Information Technology – Advanced Electronic Materials and Novel Devices 2nd Edition, Wiley VCH, 2005.

[2] Takashi Hori, Gate Dielectrics and MOS ULSI – Principles, Technologies and Applications, Springer Series in Electronics and Photonics Volume 34, edited by I.P. Kaminow, W. Engl and T. Sugano, 1996.

[3] J.F. Scott, Ferroelectric Memories, Springer Series in Advanced Microelectronics Vol. 3, 2000.

[4] J.M. Slaughter, R.W. Dave, M. DeHerrera, M. Durlam, B.N. Engel, J. Janesky, N.D. Rizzo and S. Tehrani, Journal of Superconductivity: Incorporating Novel Magnetism, Vol.15, No.1, February 2002.

[5] Relva C. Buchanan, Ceramic Materials for Electronics, Marcel Dekker, 2004.

[6] H.R. Huff and D.C. Gilmer, High Dielectric Constant Materials – VLSI MOSFET Applications, Springer Series in Advanced Microelectronics Vol. 16, 2005.

[7] J. Amon, A. Kieslich, T. Schuster, J. Faul, J. Luetzen, C. Fan, C.-C. Huang, B. Fischer, G. Enders,S. Kudelka, U. Schroeder, K.-H. Kuesters, G. Lange,  and J. Alsmeier, Tech. Dig. Int. Electron Devices Meet., 2004.

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.