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  • Embedded RRAM

Embedded RRAM

Embedded non-volatile memories for wireless sensor networks (WSN), space applications and automotive electronics

Objective

Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM). The switching effect of RRAM devices is caused by chemical redox-reactions, therefore, radiation effects like total ionizing dose and single event effects do not affect the switching mechanism. The intrinsic radiation tolerance of RRAM significantly reduces sensitivity to radiation-induced bit upsets. Nevertheless, the 1T1R structure of the memory array consists of NMOS access transistors, which are sensitive to radiation. In standard NMOS devices, ionizing radiation may generate holes trapped in the gate oxide, and the trapped holes could induce leakage paths from the drain to source region. A suitable approach to eliminate the leakage path in NMOS transistors is to adopt a gate-enclosed layout.

IHP's Contribution

IHP’s research activities on RRAM mainly focus on developing memory arrays for microcontrollers (μC) for wireless sensor networks (WSN) and for automotive electronics as well as on investigating the atomic-scale physical/chemical mechanism of the resistive switching behavior.

Funding

DFG funding under project number SCHR 1123 / 7-1.

ENIAC Joint Undertaking 2013-2, PANACHE No. 621217.
Eurpean Union’s H2020 research and innovation program under grant agreement No. 640073.

Project Partners

ST Microelectronics, France

ASM Europe, Netherlands

Robert Bosch GmbH, Germany

TU Darmstadt, Germany

Universitá degli Studi di Ferrara, Italy

Università della Calabria, Italy

REDCAT Devices, Italy

Jyvaskylan Yliopisto, Finland

Universitat Autònoma de Barcelona, Spain

Deutsches Elektronen-Synchrotron DESY, Germany

Slovak Academy of Science, Slovakia

Selected Publications

P. Calka et al., ACS Applied Materials & Interfaces 6, 5056-5060, 2014.

S. U. Sharath et al., Appl. Phys. Lett. 104, 063502, 2014.

T. Bertaud et al., Appl. Phys. Lett. 101, 143501, 2012.

M. Sowinska et al., Appl. Phys. Lett. 100, 233509, 2012.

G. Niu et al., Scientific Reports 6, 25757, 2016.

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.