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GaP for THz

GaP for THz

GaP collector for Terahertz SiGe HBT


Future evolution of IHP technologies and their application in circuits and systems follows a “More than Moore” strategy, i.e. the objective is to develop added-value technologies by the modular extension of IHP´s BiCMOS baseline platform. A strategically important goal is therefore the continuous improvement in performance of SiGe:C HBT BiCMOS technology up to the terahertz range with high power. One possible way to advance further into the high power / terahertz region is to replace the classical n-Si collector by a ternary wide band gap / high saturation velocity III-V material system.  In particular, the project evaluates the In1-xGaxP wide band gap / high saturation velocity collector concept for SiGe:C BiCMOS. [1]

IHP`s Contribution

Development of high quality InGaP growth processes on pseudomorphic Si0.8Ge0.2/Si(001) substrates by GSMBE and MOCVD systems in close collaborations with project partners. Detailed materials science and electrical heterostructure characterization to evaluate InGaP collector concept for IHP´s SiGe:C HBT BiCMOS technology.


Internal IHP project.

Project Partners

  • Humboldt-University Berlin (Germany) / T. Masselink
  • Helmholtz Centre for Materials & Energy Berlin (Germany) / T. Hannappel
  • Paul Drude Institute Berlin (Germany) / A. Trampert

Selected Publications

O. Skibitzki, F. Hatami, Y. Yamamoto, P. Zaumseil, A. Trampert, M. A. Schubert, B. Tillack, W. T. Masselink and T. Schroeder, J. Appl. Phys. 111, 073515 (2012).


O. Skibitzki, A. Paszuk, F. Hatami, P. Zaumseil, Y. Yamamoto, M. A. Schubert, A. Trampert, B. Tillack, W. T. Masselink, T. Hannappel, and T. Schroeder, Lattice-engineered Si1-xGex-buffer on Si(001) for GaP integration, J. Appl. Phys. 115, 103501 (2014).



The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.