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  • References

GaP for THz

[1] O. Skibitzki, F. Hatami, Y. Yamamoto, P. Zaumseil, A. Trampert, M. A.

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[2] B. Heinemann, R. Barth, D. Bolze, J. Drews, G. G. Fischer, A. Fox, O.

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     H. Rücker, D. Schmidt, J. Schmidt, M. A. Schubert, C. Wipf, D. Wolansky, Y.

     Yamamoto and B. Tillack, IEDM Digest, 688 (2010).

[3] E.O. Johnson, “Physical limitations on frequency and power parameters of

     transistors”, RCA Rev., 163 (1965).

[4] S. F. Fang, K. Adomi, S. Iyer, H. Mordoç, C. Choi, H. Zabel and N. Otsuka, J.

     Appl. Phys. 68 (7), R31 (1990).

[5] M. Levinshtein, S. Rumyantsev and M. Shur, “Handbook Series on

     Semiconductor Parameters”, World Scientific, Singapore/New

     Jersey/London/Hong Kong (1996).

[6] M. V. Fischetti, IEEE Transactions on Electron Devices 38 (3), 634 (1991).

[7] H. Döscher, B. Kunert, A. Beyer, O. Supplie, K. Volz, W. Stolz, and T.

     Hannappel, J. Vac. Sci. Technol. B 28 (4), C5H1 (2010).

[8] T. J. Grassman, M. R. Brenner, S. Rajagopalan, R. Unocic, R. Rehoff, M. Mills,

     H. Fraser and S. A. Ringel, Appl. Phys. Lett. 94, 232106 (2009).

[9] W. T. Masselink, T. Henderson, J. Klem, R. Fischer, P. Pearah, M. Hafich, P. D.

     Wang, G. Y. Robinson and H. Morkoç, Appl. Phys. Lett. 45 (12), 1309 (1984).

[10] A. Fischer, H. Kühne, M. Eichler, F. Holländer and H. Richter, Phys. Rev. B 5

      (12), 8761 (1996).

[11] K. Momose, H. Yonezu, Y. Fujimoto, K. Ojima, Y. Furukawa, A. Utsumi and K.

       Aiki, Jpn. J. Appl. Phys. 41 (12), 1 (2002).

[12] A. Beyer, I. Németh, S. Liebich, J. Ohlmann, W. Stolz and K. Volz, J. Appl.

      Phys. 109, 083529 (2011).

[13] F. Ernst and P. Pirouz, J. Appl. Phys. 64, 4526 (1988).

[14] V. M. Kaganer, R. Koehler, M. Schmidbauer and R. Opitz, Phys. Rev. B 55

     (3), 1793 (1996).

 

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.