• Start
  • Research print
  • Materials for Micro- and Nanoelectronics print
  • Projects print
  • Graphene print
  • Overview

Graphene

Graphene

Carbon-based devices for high frequency applications

Objective

Outstanding properties of graphene layers combined with new electronic device concepts have a big potential to overcome some of the limitations faced by conventional RF technologies. Although since the isolation of graphene an impressive progress in synthesis methods and graphene device research has been achieved, there are still many challenges ahead. Available synthesis techniques often require a transfer of deposited graphene from a host substrate (e.g. Cu) to a technology compatible platform (e.g. SiO2 /Si wafers). In this respect, a direct deposition method of graphene onto insulator/Si substrate would provide an indisputable advantage. Similarly, the existing graphene devices are to a large extend based on conventional concepts which may not fully exploit unique properties of graphene. Therefore, novel approaches are of high interest.

IHP`s Contribution

Development of direct graphene deposition methods on insulating substrates and new concepts of graphene-based high frequency devices.

Funding

Internal IHP project, DFG, European Commission

Project Partners

  • PDI Berlin (Germany)
  • Namlab GmbH Dresden (Germany)
  • MPI Halle (Germany)
  • TH Wildau (Germany)
  • UCLA (USA)
  • Salerno University (Italy)
  • KTH Kista (Sweden)
  • IUNET (Italy)

Selected Publications

A. Di Bartolomeo et al., Nanotechnology 22, 275702 (2011)

A.S. Santandrea et al., Appl. Phys. Lett. 98, 163109 (2011)

G. Lippert et al., Physica Status Solidi B 249, 2507 (2012)

P. Wang et al., ACS Nano 6, 6244 (2012)

W. Mehr et al., IEEE Electron Dev. Lett. 33, 691 (2012)

G. Lupina et al., Appl. Phys. Lett. 103, 183116 (2013)

G. Lippert et al., Carbon 52, 40 (2013)

G. Lupina et al., Appl. Phys. Lett. 103, 263101 (2013)

P. Wang et al., Adv. Mater. 25, 4918 (2013)

S. Vaziri et al., Nano Lett. 13, 1435 (2013)

S. Vaziri et al., Solid-State Electronics 84, 185 (2013)

A. Di Bartolomeo et al., Diamond & Related Materials 38, 19 (2013)

G. Lippert et al., Carbon 75, 104 (2014)

S. Vaziri et al., Proc. ESSDERC 2014, 309 (2014)

J. Dabrowski et al., Appl. Phys. Lett. 105, 191610 (2014)

M. Lukosius et al., Journal of Vacuum Science and Technology B B33, 01A110 (2015)

G. Lupina et al., ACS Nano 9, 4667 (2015)

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.