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Neuromorphic devices

Resistive RAMs based bio-inspired electronics

Objective

Bio-inspired electronics emulating neuronal synaptic connections is a novel technique for future low power analog signal processing and more. Integrating such bio-inspired electronics on CMOS/BiCMOS platform enables fabrication and analysis of an array of such devices. HfO2 based resistive RAM devices together with IHP’s SiGe BiCMOS platform will be effectively used for designing such neuromorphic devices.

IHP's Contribution

Investigating the multilevel switching property of HfO2 based resistive memory and subsequent circuit design for neuromorphic applications is done by IHP. IHP’s material research department has developed the switching physics of HfO2 based resistive memory devices.

Funding

DFG fund under project number SCHR1123/7-1 and IHP’s internal funds

Project Partners

TU Darmstadt, Germany

Universià degli Studi di Ferrara, Italy

Universitat Autonoma de Barcelona, Spain

Selected Publications

G. Niu et al., Scientific Reports, accepted for publications (2016).

A. Grossi et al., Solid-State Electronics, 115 A, 17-25 (2015).

A. Grossi et al., IEEE Transacrions on Electron Devices, 62, 2502 (2015).

H.-D. Kim et al., Journal of Vacuum Science and technology B 33, 052204 (2015).

C. Zambelli, Proc. IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 327 (2015).

A. Grossi et al., Proc. 7th International Memory Workshop (IMW), 93, (2015).

A. Grossi et al., IEEE international Conference on Memristive Systems (MEMRISYS), (2015).

P. Calka et al., ACS Applied Materials and Interfaces, 6, 5056-5060(2014).

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.