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BOOM

Silicon photonic integrated components and sub-systems enabling Tb/s capacity, scalable and fully integrated photonic routers

Objective

BOOM pursues the advancement of Silicon-on-Insulator (SOI) technology to develop compact, cost-effective, and power efficient silicon photonic components that enable photonic Tb/s capacity systems for current and new generation high-speed fiber-optic core networks. BOOM develops fabrication techniques as well as flip-chip bonding and wafer-scale integration methods to fabricate and mount the complete family of electro-optical III-V and electronic Silicon components on SOI optical boards.

IHP`s Contribution

Main task of IHP is the development of SiGe ICs for the BOOM router. Especially a SiGe driver IC for a broadband Electro-Absorption Modulator (EAM) will be realized by IHP. Target semiconductor technology is IHP's SG25H3 0.25 µm SiGe BiCMOS technology. The driver has to achieve a high output swing (>2 V single-ended) with very short rise- and fall-times.

Funding

This project is funded by European Commission with Framework 7 (FP7).

Project Partners

National Technical University of Athens (Greece), Heinrich-Hertz-Institut (Germany), Interuniversity Microelectronics Centre (IMEC, Belgium), AMO GmbH (Germany), Technical University Berlin (Germany), Technical University Eindhoven (Netherlands), Exelite Innovations Ltd. (Greece), LioniX B.V. (Netherlands), Telecom Italia S. p. A.

External Links

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.