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  • 130nm BiCMOS

0.13 µm BiCMOS

130nm SiGeC BiCMOS technology development

Objective

Develop a 130nm SiGeC BiCMOS technology as the next generation for the IHP foundry service and as a research platform for RF technology, circuits, and systems. The first process generation SG13S [1] with peak fT/fmax values of 240GHz/330GHz will be qualified in 2011. Further increased RF performance will provided in the second process generation SG13G2 [2] which utilizes a new HBT generation with record fT/fmax values of 300GHz/500GHz [3] developed within the European project DOTFIVE.

Motivation

The high-speed 130nm BiCMOS technology will facilitate system-on-a-chip solutions for wireless and broadband communication systems by the IHP circuit and system design groups and by IHP customers. The 130nm technology platform will extend the capability of the IHP to demonstrate new solutions on the device, circuit, and system levels.

Selected Publications

  1. H. Rücker et al., "A 0.13µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays below 3 ps", IEEE J. Solid-State Circuits, vol. 45, no. 9, pp. 1678-1686, Sept. 2010.

  2. H. Rücker, B. Heinemann, A. Fox, "Half-Terahertz SiGe BiCMOS technology, in: ", in: Proc. IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Santa Barbara, USA, Jan. 2012

  3. B. Heinemann et al., "SiGe HBT Technology with fT/fmax of 300 GHz/500 GHz and 2.0 ps CML Gate Delay", in:Technical Digest, IEEE International Electron Device Meeting, San Francisco, December 06-08, 2010, pp. 688-691.
The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.