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  • DOTSEVEN

DOTSEVEN

Towards 0.7 Terahertz Silicon Germanium Heterojunction Bipolar Technology

Objective

  • The realization of SiGeC Heterojunction Bipolar Transistors (HBTs) operating at a maximum frequency up to 0.7 THz  at room temperature
  • The design and demonstration of working integrated mm- and sub-mm-wave circuits using such HBTs for specific applications as specified in later subsections of this proposal
  • The evaluation, understanding, and modeling of the relevant physical effects occurring in such high-speed devices and circuits

IHP's Contribution

  • Explore advanced process modules for their potential to improve HBT performance up to 700GHz fmax
  • Explore vertical profiles and find appropriate device concepts for increasing fT without compromising a balanced fT/fmax design
  • Model experiments for the calibration of parameter models used in devices simulators
  • Provide fully-processed wafers for HBT characterization and compact modeling
  • Periodic circuit fabrication
  • Address integration aspects of most advanced HBT modules in CMOS technologies

Funding

DOTSEVEN project is funded by the FP7 program under the Grant Agreement N° 316755

Project Partners

  • INFINEON TECHNOLOGIES AG (Germany)
  • UNIVERSITA DEGLI STUDI DI NAPOLI FEDERICO II. (Italy)
  • RHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN (Germany)
  • TECHNISCHE UNIVERSITAET DRESDEN (Germany)
  • UNIVERSITE BORDEAUX I (France)
  • XMOD TECHNOLOGIES (France)
  • BERGISCHE UNIVERSITAET WUPPERTAL (Germany)
  • UNIVERSITAET LINZ  (Austria)
  • SIVERS IMA AKTIEBOLAG (Sweden)
  • TREBAX AB (Sweden)
  • TECHNISCHE UNIVERSITEIT DELFT (Netherlands)
  • DICE Danube Integrated Circuit Engineering GmbH & Co KG (Austria)
  • ALMA CONSULTING GROUP SAS (France)

Selected Publications

(1) J. Böck, K. Aufinger, S. Boguth, C. Dahl, H. Knapp, W. Liebl, D. Manger, T. F. Meister, A. Pribil, J. Wursthorn, R. Lachner, B. Heinemann, H. Rücker, A. Fox, R. Barth, G. Fischer, S. Marschmeyer, D. Schmidt, A. Trusch, C. Wipf, "SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project," in BCTM Proceedings, IEEE, 2015, pp. 121 - 124.

(2) A. Fox, B. Heinemann, H. Rücker, R. Barth, G. G. Fischer, C. Wipf, S. Marschmeyer, K. Aufinger, J. Böck, S. Boguth, H. Knapp, R. Lachner, W. Liebl, D. Manger, T. F. Meister, A. Pribil, J. Wursthorn, "Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology," IEEE Electron Device Letters, vol. 36, no. 7, pp. 642-644, July 2015.

(3) J. Grzyb, B. Heinemann, U. R. Pfeiffer, "A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS," Dig. Tech. Pap. - IEEE Int. Solid-State Circuits Conf., vol. 59, pp. 424-425, 2016.

(4) B. Heinemann, H. Rücker, R. Barth, F. Bärwolf, J. Drews, G. G. Fischer, A. Fox, O. Fursenko, T. Grabolla, F. Herzel, J. Katzer, J. Korn, A. Krüger, P. Kulse, T. Lenke, M. Lisker, S. Marschmeyer, A. Scheit, D. Schmidt, J. Schmidt, M. A. Schubert, A. Trusch, C. Wipf, D. Wolansky, "SiGe HBT with fT/fmax of 505 GHz/720 GHz", in: IEDM Technical Digest, IEEE, 2016, pp. 3.1.1-3.1.4.

(5) J. Korn, H. Rücker, B. Heinemann, A. Pawlak, G. Wedel, M. Schröter, "Experimental and Theoretical Study of fT for SiGe HBTs with a Scaled Vertical Doping Profile," in Proceedings BCTM, IEEE, pp. 117-120, 2015.

(6) U. R. Pfeiffer, Y. Zhao, J. Grzyb, R. Al Hadi, N. Sarmah, W. Förster, H. Rücker, B. Heinemann, "A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications," IEEE J. Solid-State Circuits, vol. 49, no. 12, pp. 2938-2950, Dec. 2014.

(7) K. Statnikov, J. Grzyb, B. Heinemann, U. R. Pfeiffer, "160-GHz to 1-THz multi-color active imaging with a lens-coupled SiGe HBT chip-set," IEEE Trans. Microw. Theory Tech., vol. 63, no. 2, pp. 520-532, 2015.

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.