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SITOGA

Silicon CMOS compatible transition metal oxide technology for boosting highly integrated photonic devices with disruptive performance

Objective

The SITOGA project will address the integration of transition metal oxide (TMO) materials in the silicon photonics platform for the first time in a European-scale research initiative. SITOGA will focus on two disruptive TMO materials, barium titanate (BaTiO3) and vanadium oxide (VO2), for enabling breakthrough electro-optical functionalities. The integration of such innovative materials will offer enhanced capabilities to the silicon photonics platform by offering unprecedented performance in terms of operation speed, power consumption, losses and footprint. Access to novel functionalities, such as electro-optical non-volatility (bistability) performance, will also be explored to make them available for the first time in the silicon platform. The developed technology will be useful for a wide-range of applications, especially in the telecom and datacom markets but also open opportunities in other high impact markets such as space.

IHP's Contribution

IHP will study integration of transition metal oxide devices into silicon photonic integrated circuit technology for the purpose of realizing modulator devices and switches.

Funding

This project has received co-funding from the European Commission, project no. FP7-ICT-2013-11.

Project Partners

  • Universitat Politecnica De Valencia - Nanophotonics Technology Centre, Spain
  • Centre National De La Recherche Scientifique (CNRS), France
  • Katholieke Universiteit Leuven, Belgium
The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.