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fast imaging

Highly integrated real time 3D MIMO-OFDM radar system for high resolution aerospace and security imaging applications


The goal of the project “fast imaging” is to develop a high performance and cost-efficient radar system for aerospace and security applications like helicopter obstacle detection and unattended luggage control. Compared to standard FMCW radar systems an orthogonal frequency divider multiplexing (OFDM) radar principle is used which enables parallel processing at different frequencies providing higher data rates to enable minimum latency and real time operation. A wide operation frequency band from 12-40 GHz is targeted therefore the radar components (e.g. RF frontends and antennas) need to provide ultra-wideband operation which helps to use these components as “off-the-shelf” components for different applications. Multiple-input-multiple-output (MIMO) antenna arrays will be realized to reduce the overall system costs compared to full antenna arrays.

IHP`s Contribution

  • Chip fabrication for RF frontends using IHPs high performance SG13S technology
  • Development of Through-Silicon Via (TSV) module to minimize parasitics for RF grounding as a main requirement for ultra-wideband operation
  • “Via-middle” TSV integration approach including TSV fabrication between FEOL and BEOL, carrier-wafer handling and thin wafer backside fabrication
  • TSV modeling and design-kit integration  


„fast imaging“ is funded by the Bundesministerium für Bildung und Forschung (BMBF) within the funding scheme “Zwanzig20 – Partnerschaft für Innovation”.

Project Partners

  • Silicon Radar
  • AIRBUS Group
  • TU Dresden

Selected Publications

M. Wietstruck, M. Kaynak, S. Marschmeyer, C. Wipf, I. Tekin, K. Zoschke, B. Tillack, “Modeling and Optimization of BiCMOS Embedded Through-Silicon Vias for RF-Grounding”, Proc. 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2014), 83 (2014)


S. Marschmeyer, J. Berthold, A. Krueger, M. Lisker, A. Scheit, S. Schulze, A. Trusch, M. Wietstruck,
D. Wolansky, “Modular Integration of Annular TSV Structures filled with Tungsten in a 0.25 µm BiCMOS Technology”, Microelectronic Engineering, Volume 137, 2. April 2015, Pages 153-157


M. Wietstruck, S. Marschmeyer, M. Lisker, A. Krueger, D. Wolansky, P. Kulse, A. Goeritz, M. Inac, T. Voss, A. Mai, M. Kaynak, “Accurate Depth Control of Through-Silicon Vias by Substrate Integrated Etch Stop Layers”, Proc. 67th IEEE Electronics Components and Technology Conference (ECTC 2017)

External Links

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.