IHP offers research partners and customers access to its powerful SiGe:C BiCMOS technologies and special integrated RF modules.
These technologies are especially suited for applications in the higher GHz bands (e.g. for wireless, broadband, radar). They provide integrated HBTs with cut-off frequencies of up to 500 GHz.
SiGe:C BiCMOS Technologies for MPW & Prototyping:
SG25H3: | A 0.25 µm technology with a set of npn-HBTs ranging from a higher RF performance (fT/fmax= 110/180 GHz) to higher breakdown voltages up to 7 V. |
SGB25V: | A cost-effective technology with a set of npn-HBTs up to a breakdown voltage of 7 V. |
SG13S: | A high-performance 0.13 µm BiCMOS with npn-HBTs up to fT / fmax= 250/340 GHz, with 3.3 V I/O CMOS and 1.2 V logic CMOS. |
SG13G2: | A 0.13 µm BiCMOS technology with much higher bipolar performance of fT/fmax = 300/500 GHz. |
| SG25H5_EPIC | A monolithic photonic BiCMOS technology combining 0.25 µm CMOS, high-performance npn HBTs (fT / fmax = 220/290 GHz), and full photonic device set for C/O-band. |
The backend offers 3 (SG13: 5) thin and 2 thick metal layers (TM1: 2 μm, TM2: 3 μm).
A cadence-based mixed signal design kit is available. For high frequency designs an analogue Design Kit in ADS can be used. IHP's reusable blocks and IPs for wireless and broadband are offered to support your designs.
There is a schedule for the MPW & Prototyping runs.
Schedule
