Low-Volume & Multi-Project Service

IHP offers research partners and customers access to its powerful SiGe:C BiCMOS technologies and special integrated RF modules.

These technologies are especially suited for applications in the higher GHz bands (e.g. for wireless, broadband, radar). They provide integrated HBTs with cut-off frequencies of up to 500 GHz.

SiGe:C BiCMOS Technologies for MPW & Prototyping:

SG25H3:	A 0.25 µm technology with a set of npn-HBTs ranging from a higher RF performance (f_T/f_max= 110/180 GHz) to higher breakdown voltages up to 7 V.
SG25H4:	A high performance BiCMOS technology. Process is identical to former SG25H1 technology, only Process Design Kit is new. The bipolar module is based on H1 SiGe:C npn HBT’s with up to 190 GHz transit frequencies and up to 220 GHz oscillation frequencies.
SGB25V:	A cost-effective technology with a set of npn-HBTs up to a breakdown voltage of 7 V.
SG13S:	A high-performance 0.13 µm BiCMOS with npn-HBTs up to f_T / f_max= 250/340 GHz, with 3.3 V I/O CMOS and 1.2 V logic CMOS.
SG13G2:	A 0.13 µm BiCMOS technology with much higher bipolar performance of f_T/f_max = 300/500 GHz.

The backend offers 3 (SG13: 5) thin and 2 thick metal layers (TM1: 2 μm, TM2: 3 μm).

A cadence-based mixed signal design kit is available. For high frequency designs an analogue Design Kit in ADS can be used. IHP's reusable blocks and IPs for wireless and broadband are offered to support your designs.

There is a schedule for the MPW & Prototyping runs.

Schedule

The following Modules are available

H3P:	Additional pnp-HBTs with f_T/f_max = 90/120 GHz for complementary bipolar applications (available in SG25H3).
RFMEMS:	This module is an additional option in SG13S and SG13G2 technologies which offers integrated capacitive RFMEMS switch devices for frequencies between 40 GHz to 150 GHz.
LBE:	The Localized Backside Etching module is offered to remove silicon locally to improve passive performance (available in all technologies).
PIC:	Additional photonic design layers together with BiCMOS BEOL layers on SOI wafers (available in SG25H4).

Bipolar Section

SG25H3	High Performance	Medium Voltage	High Voltage	PNP H3P module
A_E	0.22 x 0.84 µm²	0.22 x 2.24 µm²	0.22 x 2.24 µm²	0.22 x 0.84 µm²
Peak f_max	180 GHz	140 GHz	80 GHz	120 GHz
Peak f_T	110 GHz	45 GHz	25 GHz	90 GHz
BV_CE0	2.3 V	5 V	>7 V	-2.5 V
BV_CB0	6.0 V	15.5 V	21.0 V	-4.0 V
V_A	30 V	30 V	30 V	30 V
ß	150	150	150	100

SG25H4	npn1	npn2
A_E	0.21 x 0.84 µm²	0.18 x 0.84 µm²
Peak f_max	190 GHz	220 GHz
Peak f_T	190 GHz	180 GHz
BV_CE0	1.9 V	1.9 V
BV_CB0	4.5 V	5.0 V
V_A	40 V	40 V
ß	270	260

SGB25V	High Performance	Standard	High Voltage
A_E	0.42 x 0.84 µm²	0.42 x 0.84 µm²	0.42 x 0.84 µm²
Peak f_max	95 GHz	90 GHz	70 GHz
Peak f_T	75 GHz	45 GHz	25 GHz
BV_CE0	2.4 V	4.0 V	7.0 V
BV_CB0	>7 V	>15 V	>20 V
V_A	>50 V	>80 V	>100 V
ß	190	190	190

SG13S	npn13P	npn13V
A_E	0.12 x 0.48 µm²	0.18 x 1.02 µm²
Peak f_max	340 GHz	165 GHz
Peak f_T	250 GHz	45 GHz
BV_CE0	1.7 V	3.7 V
BV_CB0	5.0 V	15 V
ß	900	900

SG13G2	npn13G2
A_E	0.07 x 0.90 µm²
Peak f_max	500 GHz
Peak f_T	300 GHz
BV_CE0	1.7 V
BV_CB0	4.8 V
ß	650

CMOS Section

		SG25H3/H4*	SG13S***
Core Supply Voltage		2.5 V	3.3 V	1.2 V
nMOS	V_TH	0.6 V	0.71 V	0.50 V
	I_OUT**	540 µA/µm	280 µA/µm	480 µA/µm
	I_OFF	3 pA/µm	10 pA/µm	500 pA/µm
pMOS	V_TH	-0.6 V	-0.61 V	-0.47 V
	I_OUT	-230 µA/µm	-220 µA/µm	-200 µA/µm
	I_OFF	-3 pA/µm	-10 pA/µm	-500 pA/µm
* Parameters for SGB25V are similar @ V_G = 2.5 V * Parameters for SG13G2 have to be defined

RF MEMS Switch module

Actuation voltage	60 V (Pull-In ~50 V)
C_on/C_off	> 10
Switch time	< 10 µs
Isolation*	< 20 dB
Insertion loss*	< 1dB
*@60 GHz

Passive Section

	SG25H3/H4	SGB25V	SG13S
MIM Capacitor	1 fF/µm2	1 fF/µm2	1.5 fF/µm2
N+ Poly Resistor	210 Ω/ߛ	210 Ω/ߛ	-
P+ Poly Resistor	280 Ω/ߛ	310 Ω/ߛ	250 Ω/ߛ
High Poly Resistor	1600 Ω/ߛ	2000 Ω/ߛ	1300 Ω/ߛ
Varactor Cmax/Cmin	3	tbd.	tbd.
Inductor Q@5 GHz	18 (1 nH)	18 (1 nH)	18 (1 nH)
Inductor Q@10 GHz	20 (1 nH)	20 (1 nH)	20 (1 nH)
Inductor Q@5 GHz	37 (1 nH)*	37 (1 nH)*	37 (1 nH)*
* with LBE

Photonic Integrated Circuit Module

2 dopings (p+, n+)
Full backend metal stack (3x metal + 2x top metal)
Localized backside etching (optional)

Etch depth	220 nm	120 nm	70 nm
Waveguide loss	3.5 dB/cm (Waveguide width = 450 nm)	3 dB/cm (Waveguide width = 500 nm)	1 dB/cm (Waveguide width = 700 nm)
Smallest feature size	width > 140 nm, notch/space>180 nm (remaining area is drawn)	width > 180 nm, notch/space > 400 nm (area being etched is drawn)	width > 130 nm, notch/space > 130 nm (area being etched is drawn)

Etch depth

220 nm

120 nm

70 nm

Waveguide loss

3.5 dB/cm

(Waveguide width =
450 nm)

3 dB/cm

(Waveguide width =

500 nm)

1 dB/cm

(Waveguide width =
700 nm)

Smallest feature size

width > 140 nm,

notch/space>180 nm (remaining area is drawn)

width > 180 nm,

notch/space > 400 nm

(area being etched is drawn)

width > 130 nm,

notch/space > 130 nm

(area being etched is drawn)

Germanium Photo Diode Building Block

Waveguide stub

Bandwidth > 67 GHz @ Bias = -2V

Responsivity = 0.9 A/W @ Bias = -2V

GDSII cell

Mach-Zehnder Modulator Building Block

5 mm phase shifter length

Designed for push-pull operation

Bandwidth ~ 15 GHz

Travelling Wave Electrode Design

Insertion loss (including coupling) ~ 14 dB

Vπ~6V

GDSII cell