[50]

A Fully Integrated Homodyne Upconverter MMIC in SiGe:C for 60 GHz Wireless Applications

H. P. Forstner, Markus Ortner, Ludger Verweyen

Accepted paper to the SiRF 2011 http://www.silicon-rf.org .

Abstract: A fully integrated transmitter MMIC manufactured in a 200 GHz SiGe:C production technology is presented. To simplify the analog frontend, the fully differential design is based on a homodyne architecture. It comprises polyphase filters, a Gilbert-based complex upconversion mixer and an active signal combiner followed by a linear power amplifier. The total measured upconversion gain is 27 dB. With a maximum linear output power of 14 dBm, the complete circuit draws a current of 150 mA from a single 3.3 V supply. The MMIC permits operation in the 57 to 64 GHz band and requires no chip-external circuitry.

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Publications Publications, alphabetical order Publications 2008 Publications 2009 Publications 2010 Publications 2011 ICC 2009 PR 01/2009 Final Presentation	[50] A Fully Integrated Homodyne Upconverter MMIC in SiGe:C for 60 GHz Wireless Applications H. P. Forstner, Markus Ortner, Ludger Verweyen Accepted paper to the SiRF 2011 http://www.silicon-rf.org . Abstract: A fully integrated transmitter MMIC manufactured in a 200 GHz SiGe:C production technology is presented. To simplify the analog frontend, the fully differential design is based on a homodyne architecture. It comprises polyphase filters, a Gilbert-based complex upconversion mixer and an active signal combiner followed by a linear power amplifier. The total measured upconversion gain is 27 dB. With a maximum linear output power of 14 dBm, the complete circuit draws a current of 150 mA from a single 3.3 V supply. The MMIC permits operation in the 57 to 64 GHz band and requires no chip-external circuitry.