A Fully Integrated 60 GHz Transmitter Front–End in SiGe BiCMOS Technology
This paper was submitted for SiRF2011 .
Abstract: A fully integrated transmitter (TX) front-end for wireless communication at 60 GHz, produced in 0.25 μm SiGe:C BiCMOS technology is presented. The transmitter features a modified heterodyne topology with a sliding intermediate frequency (IF). The TX features IF I/Q mixers, an IF amplifier, a 60 GHz mixer, a phase-locked loop, an image-rejection filter and a power amplifier. The measured 1–dB compression point at the output is 12.6 dBm and the saturated power is 16.2 dBm. Error–free data transmission with a 16QAM OFDM signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe without beamforming.