[14]

High Power V-Band Power Amplifier

Amin Hamidian, Henrique Portela, Georg Boeck

The paper is accepted for IMOC 2009 http://www.prodepa.gov.br/imoc2009/ .

Abstract: This paper presents a fully integrated V-band two stage power amplifier with cascode topology. The PA is designed on 0.25 um SiGe:C BiCMOS technology. The technology provides f _T and f _max ~ 200 GHz. The two stage PA provides a gain of 17 dB at 64 GHz. The PA has been optimized for biasing circuit, PA Core and the matching networks. This has resulted in high power and high linearity from 58 GHz to 66 GHz. As a result of the optimization the 1 dB gain compression point remains better than 12 dBm in the entire range of the frequency. The PA achieves the maximum P1dB of 13.8 dBm at around 64 GHz.

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Publications Publications, alphabetical order Publications 2008 Publications 2009 Publications 2010 Publications 2011 ICC 2009 PR 01/2009 Final Presentation	[14] High Power V-Band Power Amplifier Amin Hamidian, Henrique Portela, Georg Boeck The paper is accepted for IMOC 2009 http://www.prodepa.gov.br/imoc2009/ . Abstract: This paper presents a fully integrated V-band two stage power amplifier with cascode topology. The PA is designed on 0.25 um SiGe:C BiCMOS technology. The technology provides f _T and f _max ~ 200 GHz. The two stage PA provides a gain of 17 dB at 64 GHz. The PA has been optimized for biasing circuit, PA Core and the matching networks. This has resulted in high power and high linearity from 58 GHz to 66 GHz. As a result of the optimization the 1 dB gain compression point remains better than 12 dBm in the entire range of the frequency. The PA achieves the maximum P1dB of 13.8 dBm at around 64 GHz.