[23]

64 to 86 GHz VCO Utilizing Push-Push Frequency Doubling in a 80 GHz fT SiGe HBT Technology

Gang Liu, A. Cagri Ulusoy, Andreas Trasser and Hermann Schumacher

This paper will be presented at the coming SiRF2010 http://www.silicon-rf.org

Abstract: In this paper, the authors present a VCO/doubler IC with an output frequency near the maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to 86 GHz with a maximum output power of -3.4 dBm at 79 GHz. It is designed using an 0.8 um SiGe HBT technology with f _T /f _max of 80/90 GHz. The high frequency of operation is achieved by push-push frequency doubling. -4.5 dBm output at 87.1 GHz was reached by increasing the supply voltage. To the authors? knowledge, a frequency generation IC operating so close to f _max with comparably wide tuning range and high output power has not yet been reported.

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Publications Publications, alphabetical order Publications 2008 Publications 2009 Publications 2010 Publications 2011 ICC 2009 PR 01/2009 Final Presentation	[23] 64 to 86 GHz VCO Utilizing Push-Push Frequency Doubling in a 80 GHz fT SiGe HBT Technology Gang Liu, A. Cagri Ulusoy, Andreas Trasser and Hermann Schumacher This paper will be presented at the coming SiRF2010 http://www.silicon-rf.org Abstract: In this paper, the authors present a VCO/doubler IC with an output frequency near the maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to 86 GHz with a maximum output power of -3.4 dBm at 79 GHz. It is designed using an 0.8 um SiGe HBT technology with f _T /f _max of 80/90 GHz. The high frequency of operation is achieved by push-push frequency doubling. -4.5 dBm output at 87.1 GHz was reached by increasing the supply voltage. To the authors? knowledge, a frequency generation IC operating so close to f _max with comparably wide tuning range and high output power has not yet been reported.