[22]

A SiGe Frequency Quadrupler for M-QAM Carrier Recovery

A. Cagri Ulusoy, Gang Liu, Andreas Trasser and Hermann Schumacher

This paper will be presented at the coming SiRF2010 http://www.silicon-rf.org

Abstract: In this paper a frequency quadrupler circuit, integrated with a commercially available SiGe HBT technology (f _T /f _max ~ 80/90 GHz) is presented. The quadrupler consists of two Gilbert cell mixers stacked as squarers. The measured maximum conversion gain is 0.6 dB for an input level of -9 dBm. The circuit is optimized for M-QAM carrier recovery, and the performance was tested by applying QPSK and 16QAM modulated signals with 4 Gbit/s data rate at the input. Both experimental and simulated results are presented. The fully integrated chip is operated from a single 2.5V DC supply and draws 22.3 mA current.

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Publications Publications, alphabetical order Publications 2008 Publications 2009 Publications 2010 Publications 2011 ICC 2009 PR 01/2009 Final Presentation	[22] A SiGe Frequency Quadrupler for M-QAM Carrier Recovery A. Cagri Ulusoy, Gang Liu, Andreas Trasser and Hermann Schumacher This paper will be presented at the coming SiRF2010 http://www.silicon-rf.org Abstract: In this paper a frequency quadrupler circuit, integrated with a commercially available SiGe HBT technology (f _T /f _max ~ 80/90 GHz) is presented. The quadrupler consists of two Gilbert cell mixers stacked as squarers. The measured maximum conversion gain is 0.6 dB for an input level of -9 dBm. The circuit is optimized for M-QAM carrier recovery, and the performance was tested by applying QPSK and 16QAM modulated signals with 4 Gbit/s data rate at the input. Both experimental and simulated results are presented. The fully integrated chip is operated from a single 2.5V DC supply and draws 22.3 mA current.