Publikationen 2022

Script list Publications

(1) A Design Concept for Radiation Hardened RADFET Readout System for Space Applications
M. Andjelkovic, A. Simevski, J. Chen, O. Schrape, Z. Stamenkovic, M. Krstic, S. Ilic, G. Ristic, A. Jaksic, N. Vasovic, R. Duane, A. Palma, L. Lallena, M. Carvajal
Microprocessors and Microsystems 90, 104486, (2022)
(ELICSIR)
Instruments for measuring the absorbed dose and dose rate under radiation exposure, known as radiation dosi-meters, are indispensable in space missions. They are composed of radiation sensors that generate current or voltage response when exposed to ionizing radiation, and processing electronics for computing the absorbed dose and dose rate. Among a wide range of existing radiation sensors, the Radiation Sensitive Field Effect Transistors (RADFETs) have unique advantages for absorbed dose measurement, and a proven record of successful exploitation in space missions. It has been shown that the RADFETs may be also used for the dose rate monitoring. In that regard, we propose a unique design concept that supports the simultaneous operation of a single RADFET as absorbed dose and dose rate monitor. This enables to reduce the cost of implementation, since the need for other types of radiation sensors can be minimized or eliminated. For processing the RADFET’s response we propose a readout system composed of analog signal conditioner (ASC) and a self-adaptive multiprocessing system-on-chip (MPSoC). The soft error rate of MPSoC is monitored in real time with embedded sensors, allowing the autonomous switching between three operating modes (high-performance, de-stress and fault-tolerant), according to the application requirements and radiation conditions.

(2) 55% Fractional-Bandwidth Doherty Power Amplifier in 130-nm SiGe for 5G mm-Wave Applications
A. Franzese, N. Maletic, M.H. Eissa, M.-D. Wei, R. Negra, A. Malignaggi
Proc. European Microwave Integrated Circuits Conference (EuMIC 2021), 273 (2022)

(3) Real-Valued Spreading Sequences for PSSS‑Based High-Speed Wireless Systems
L. Lopacinski, N. Maletic, G. Panic, A. Hasani, J. Gutierrez Teran, E. Grass
IEEE Access
(PSSS-FEC)
In past years, Parallel Sequence Spread Spectrum (PSSS) has attracted significant attention as a modulation technique for wireless communication systems targeting data rates of 100 Gb/s and beyond. PSSS allows designing high-speed baseband processors, which can be partially implemented in the analog domain. It uses multiple analog-to-digital converters (ADCs) to sample the received baseband signal in parallel, significantly relaxing the sampling rate and ADC complexity. However, due to the sidelobe effects of bipolar m-sequences, PSSS shows lower performance than standard digital modulation schemes. This paper proposes real-valued PSSS spreading sequences with attenuated autocorrelation sidelobes. Such sequences show excellent bit error rate (BER) performance. Moreover, our sequences do not have length restrictions of 2m – 1, like in the case of m-sequences, and reduce the chip area required to implement PSSS transceiver. The proposed sequences also reduce the peak-to-average power ratio (PAPR) of PSSS.

(4) TDoA Positioning in Wi-Fi based Systems
N. Manjappa, V. Sark, J. Gutierrez, E. Grass
Proc. 9th Small Systems Simulation Symposium (SSSS 2022), 81 (2022)
(5G-CLARITY)

(5) Fading of pMOS Dosimeters over a Long Period of Time
G. Ristic, M. Andjelkovic, R. Duane, A. Jaksic
IET Micro & Nano Letters 1 (2022)
(ELICSIR)
The fading of radiation-sensitive p-channel metal-oxide-semiconductor field-effect transistors (known as RADFETs or pMOS dosimeters) over a long time period of 10 years after irradiation has been investigated. Fading is, in addition to sensitivity, another characteristic of pMOS radiation dosimeters. It is considered as the recovery of threshold voltage of irradiated pMOS dosimeters during ambient annealing without gate polarization. Usually there are the fading data for few months after irradiation only. Although fading is a very important dosimetric characteristic, here it is given for the first time in the lierature in such a long period of time. Two types of pMOS dosimeters with oxide thicknesses of 400 and 1000 nm are used. They are irradiated without and with a 5 V polarization on the gate. For the first time, we came to a very significant result that the key role in fading has the voltage applied during irradiation, but not the thickness of the oxide, and that the pMOS dosimeters irradiated with gate voltage of 5 V have greater fading than pMOS dosimeters irradiated without a gate voltage. Fitting of threshold voltage shift and fading, performed using the radiation-induced Eg and Es traps, shows very good agreement with the experimental values.
 

(6) Commercial p-Channel Power VDMOSFET as X-Ray Dosimeter
G. Ristic, S. Ilic, S. Veljkovic, A. Jevtic, S. Dimitrijevic, A. Palma, S. Stankovic, M. Andjelkovic
Electronics (MDPI) 11, 918 (2022)
(ELICSIR)

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