Preliminary Program of GADEST 2009
Saturday - Sunday - Monday - Tuesday - Wednesday - Thursday - Friday - Poster Session 1 - Poster Session 2
| Saturday (September 26, 2009) | |
| Arrival at Hotel Döllnsee-Schorfheide | |
| 16:00 | Registration start |
| 19:00 – 23:00 | Get-together party |
| Sunday (September 27, 2009) | |
| 09:00 – 09:20 | Opening |
| Plenary
Session |
|
| Session chair: H. Grimmeiss | |
| 09:20 – 10:10 | Electrical and optical properties of dislocations in Si V. Kveder (invited) |
| 10:10 – 11:00 | Dislocation nucleation in heteroepitaxial semiconducting films B. Pichaud (invited), N. Burle, M. Texier, C. Fontaine and V. Vdovin |
| 11:00 – 11:20 | COFFEE BREAK |
| 11:20 – 12:10 | Numerical analysis of mc-Si crystal growth K. Kakimoto (invited), H. Matsuo, S. Hisamatsu, B. Ganesh, G. Bing, X.J. Chen, L. Liu, H. Miyazawa and Y. Kangawa |
| 12:10 – 14:00 | LUNCH |
| Session chair: H. Richter | |
| 14:00 – 14:50 | Trends in photovoltaics P. Fath (invited) |
| Session: Point Defects and Oxygen | |
| 14:50 – 15:10 | Properties of fast-diffusing oxygen species in silicon deduced
from the generation kinetics of thermal donors V.V. Voronkov, G.I. Voronkova, A.V. Batunina, V.N. Golovina, R. Falster, M. Cornara, N.B. Tiurina and A.S. Guliaeva |
| 15:10 – 15:30 | Oxygen precipitation in conventional and nitrogen co-doped heavily
arsenic- doped Czochralski silicon crystals: Ostwald ripening X. Ma, Y. Feng, Y. Zeng and D. Yang |
| 15:30 – 15:50 | The role of the interstitial oxygen in the recovery and evolution
of the boron implantation damage I. Mica, M.L. Polignano, F. Cazzaniga, L. Di Piazza, M. Mariani, E. Ricci, F. Sammiceli and S. Speranza |
| 15:50 – 16:20 | COFFEE BREAK |
| Session chair: A. Cavallini | |
| 16:20 – 17:00 | Review of stress effects on dopant solubility in Si and SiGe
layers N.S. Bennett, C. Ahn, N.E.B. Cowern and P. Pichler (invited) |
| 17:00 – 17:20 | Rate equation modeling, ab initio calculation, and high sensitive
FTIR investigations of the early stages of oxide precipitation in vacancy-rich
CZ silicon G. Kissinger, J. Dabrowski, V. Akhmetov, A. Sattler, D. Kot and W. von Ammon |
| 17:20 – 17:40 | Low-temperature elastic softening due to vacancies in B-doped
FZ Si crystals H. Yamada-Kaneta, H. Watanabe, Y. Nagai, S. Baba, M. Akatsu, Y. Nemoto and T. Goto |
| 17:40 – 18:00 | Oxygen diffusion in Si1-xGex alloys L.I. Khirunenko, Y.V. Pomozov, M.G. Sosnin, A.V. Duvanskii, S.K. Golyk, N.V. Abrosimov and H. Riemann |
| 18:00 – 19:30 | DINNER |
| Poster Session 1 19:30 – open end |
|
| Monday (September 28, 2009) | |
| Session: Photovoltaic Silicon and Defects | |
| Session chair: W. Koch | |
| 08:30 – 09:10 | Influence of defects on solar cell characteristics O. Breitenstein (invited), J. Bauer, P. P. Altermatt and K. Ramspeck |
| 09:10 – 09:50 | Dislocation engineering in multi-crystalline silicon M. Bertoni (invited), C. Colin and T. Bounassisi |
| 09:50 – 10:10 | Analysis of heterogeneous iron precipitation in mc-Si A. Haarahiltunen, V. Vähänissi, M. Yli-Koski, H. Talvitie and H. Savin |
| 10:10 – 10:30 | Photovoltaic-quality silicon epitaxy by hot-wire CVD at glass-compatible
temperatures C.W. Teplin, I.T. Martin, M. Shub, R.C. Reedy, K.M. Jones, M.J. Romero, P. Stradins and H.M. Branz |
| 10:30 – 10:50 | COFFEE BREAK |
| Session chair: E. Weber | |
| 10:50 – 11:30 | Multi-crystalline Si wafers for solar cells Y. Wan (invited) |
| 11:30 – 12:10 | Conduction mechanisms in doped and undoped nc-Si for PV A. Cavallini (invited) |
| 12:10 – 14:00 | LUNCH |
| Session: Hydrogen and Defect Passivation in Si | |
| Session chair: T. Buonassisi | |
| 14:00 – 14:40 | Hydrogenation in crystalline silicon materials for photovoltaic
application G. Hahn (invited), M. Käs and B. Herzog |
| 14:40 – 15:00 | Hydrogen effects in Si substrates for solar cells A. Ulyashin |
| 15:00 – 15:20 | EBIC investigation of the influence of hydrogen passivation
on thin-film polycrystalline silicon solar cells obtained by aluminium
induced crystallization and epitaxy D. Van Gestel, I. Gordon and J. Poortmans |
| 15:20 – 15:40 | Influence of hydrogen on the structural stability of annealed
ultrathin Si/Ge amorphous layers C. Frigeri, L. Nasi, M. Serényi, A. Csik, Z. Erdélyi and D. L. Beke |
| 15:40 – 16:10 | COFFEE BREAK |
| Session: Defect Engineering and Gettering | |
| Session chair: D. Yang | |
| 16:10 – 16:30 | Iron gettering in CZ silicon during the industrial solar cell
process A. Laades, K. Lauer, C. Maier, D. Alber, M. Bähr, J. Nutsch, J. Lossen and A. Lawerenz |
| 16:30 – 16:50 | Trans-RP gettering and out-diffusion of oxygen implanted into
highly B-doped silicon R. Kögler, Ch. Debois, J.W. Gerlach, H. Hutter, A. Mücklich and W. Skorupa |
| 16:50 – 17:10 | Effect of oxygen in low temperature boron and phosphorus diffusion
gettering of iron in Czochralski-grown silicon V. Vähänissi, A. Haarahiltunen, H. Talvitie, M.I. Asghar, M. Yli-Koski and H. Savin |
| 17:10 – 17:30 | Gettering efficiency of Si (110)/(100) directly bonded hybrid
crystal orientation substrates T. Aoki, H. Kariyazaki, K. Sueoka and K. Izunome |
| 17:30 – 17:50 | The production of vacancy-oxygen defects in electron-irradiated
Cz-Si initially treated at high temperatures and high pressures A. Andrianakis, C.A. Londos, A. Misiuk, V.V. Emtsev, G.A. Oganesyan and H. Ohyama |
| 18:00 – 19:30 | DINNER |
| Poster Session 1 19:30 – open end |
|
| Tuesday (September 29, 2009) | |
| Session: Si-based Photonics and Defect Luminescence | |
| Session chair: N. Sobolev | |
| 08:30 – 09:10 | Silicon periodic structures and their liquid crystal composites E.V. Astrova (invited), V.A. Tolmachev, Yu.A. Zharova, G.V. Fedulova, A.V. Baldycheva and T.S. Perova |
| 09:10 – 09:30 | Dependence of luminescence properties of bonded Si wafers on
surface twist angle E.A. Steinman, O. Kononchuk, A.N. Tereshchenko and A.A. Mazilkin |
| 09:30 – 09:50 | D-line emission from small angle grain boundaries in multicrystalline
Si T. Sekiguchi, W. Lee, J. Chen and B. Chen |
| 09:50 – 10:10 | Determination of the origin of dislocation related luminescence
from silicon using regular dislocation networks T. Mchedlidze, O. Kononchuk, T. Arguirov, M. Trushin, M. Reiche and M. Kittler |
| 10:10 – 10:30 | COFFEE BREAK |
| Session chair: V. Kveder | |
| 10:30 – 10:50 | Structural and luminescent properties of implanted silicon layers
with dislocation-related luminescence N.A. Sobolev, Kalyadin, R.N. Kyutt, E.I. Shek and V.I. Vdovin |
| 10:50 – 11:10 | Optimization of the luminescence properties of silicon diodes
produced by implantation and annealing T. Arguirov, T. Mchedlidze, M. Reiche and M. Kittler |
| 11:20 – 12:20 | LUNCH |
| Excursion to Berlin | |
| 12:30 | Departure to excursion |
| 19:00 | Expected time of arrival from Berlin |
| 19:00 – 20:30 | DINNER |
| Poster Session 2 20:30 – open end |
|
| Wednesday (September 30, 2009) | |
| Session: Advanced Semiconductor Materials and Devices | |
| Session chair: V. Litovchenko | |
| 09:10 – 09:50 | Advanced Si-based semiconductors for energy and photonic applications J. Kouvetakis (invited), J. Menendez and J. Tolle |
| 09:50 – 10:30 | Strained silicon devices M. Reiche (invited), O. Mountanabbir, J. Hoentschel, U. Gösele, S. Flachowsky and M. Horstmann |
| 10:30 – 10:50 | COFFE BREAK |
| Session chair: G. Rozgonyi | |
| 10:50 – 11:30 | Novel trends in SOI technology for CMOS applications O. Kononchuk (invited), D. Landru and C. Veytizou |
| 11:30 – 11:50 | Si wafer bonding: Structural features of the interface V.I. Vdovin, N.D. Zakharov, E. Pippel, P. Werner, M.G. Milvidskii, M. Ries, M. Seacrist and R. Falster |
| 11:50 – 12:10 | Semi-insulating silicon for microwave devices D.M. Jordan, K. Mallik, R.J. Falster and P.R. Wilshaw |
| 12:10 – 14:00 | LUNCH |
| Session: Modeling | |
| Session chair: P. Pichler | |
| 14:00 – 14:20 | Optimization of silicon ingot quality by the numerical prediction
of bulk crystal defects F. Loix, F. Dupret, A. de Potter, R. Rolinsky, N. Van den Bogaert and V. Regnier |
| 14:20 – 14:40 | Simulation of iron distribution after crystallization of mc-silicon J. Schön, H. Habenicht, M.C. Schubert and W. Warta |
| 14:40 – 15:00 | Modeling of dislocations in Ge/Si nanostructures by finite element
method R. Gatti, F. Boioli, A. Marzegalli, F. Montalenti and L. Miglio |
| 15:00 – 15:20 | Atomistic simulation of recrystallization of amorphous Si, Ge
and SiGe M. Posselt and A. Gabriel |
| 15:20 – 15:40 | Ab initio study of hydrogenated defects and platelets models
in hydrogen implanted Si L. Bilteau, A. Tauzin and J.-P. Crocombette |
| 15:40 – 16:00 | Molecular simulation on interfacial structure and gettering
efficiency of Si (110)/(100) directly bonded hybrid crystal orientation
substrates H. Kariyazaki, T. Aoki, K. Izunome and K. Sueoka |
| 16:00 – 16:30 | COFFEE BREAK |
| Session: Defect and Impurity Characterization I | |
| Session chair: T. Sekiguchi | |
| 16:30 – 17:10 | Synchrotron microscopy and spectroscopy for analysis of solar
Si W. Seifert (invited), O. Vyvenko, T. Arguirov, M. Trushin and M. Kittler |
| 17:10 – 17:30 | Quantitative iron concentration imaging M.C. Schubert, H. Habenicht, M.J. Kerler and W. Warta |
| 17:30 – 17:50 | Divacancy-oxygen and trivacancy-oxygen complexes in silicon:
Local vibrational mode studies L.I. Murin, B.G. Svensson , J.L. Lindström, V.P. Markevich and C.A. Londos |
| 18:00 – 19:30 | DINNER |
| Poster Session 2 19:30 – open end |
|
| Thursday (October 01, 2009) | |
| Session: Impurity Engineering and Radiation-Induced Defects | |
| Session chair: O. Kononchuk | |
| 09:00 – 09:40 | Can impurities be beneficial to photovoltaics? A. Luque (invited) and A. Marí |
| 09:40 – 10:20 | Impurity engineering of Czochralski silicon J. Chen, X. Ma and D. Yang (invited) |
| 10:20 – 10:40 | Role of ion irradiation induced lattice defects on nanoscale
capacitive behavior of graphene S. Sonde, F. Giannazzo, V. Raineri, S. Di Franco, A. Marino and E. Rimini |
| 10:40 – 11:00 | COFFE BREAK |
| Session chair: V. Raineri | |
| 11:00 – 11:20 | Formation of radiation-induced defects in Si crystals irradiated
with electrons at elevated temperatures V.P. Markevich, A.R. Peaker, S.B. Lastovskii, V.E. Gusakov, I.F. Medvedeva and L.I. Murin |
| 11:20 – 11:40 | Accumulation of hydrogen within implantation-damaged areas in
processed Si:N and Si:O A. Misiuk, A. Ulyashin, A. Barcz and P. Formanek |
| 11:40 – 12:00 | Anisotropic strain - Anisotropic heating engineering for Si
nanocrystals in SiO2 I.V. Antonova, D.V. Marin, V.A.Volodin, V.A. Skuratov, J. Jedrzejewski and I. Balberg |
| 12:00 – 14:00 | LUNCH |
| Session chair: B. Pichaud | |
| 14:00 – 14:20 | Co-precipitation of copper and nickel in crystalline Si under
copper- and nickel- rich conditions C. Rudolf, P. Saring, L. Stolze and M. Seibt |
| 14:20 – 14:40 | Radiation defects in silicon: Effect of contamination by platinum
atoms P. Hazdra and V. Komarnitskyy |
| Session: Defect and Impurity Characterization II | |
| 14:40 – 15:20 | Grain boundaries in multicrystalline Si J. Chen (invited), B. Chen, W. Lee, M. Fukuzawa, M. Yamada and T. Sekiguchi |
| 15:20 – 15:50 | COFFEE BREAK |
| Session chair: L. Fabry | |
| 15:50 – 16:10 | Electronic states of oxygen-free dislocation networks produced
by direct bonding of silicon wafers M. Trushin, O. Vyvenko, T. Mchedlidze, O. Kononchuk and M. Kittler |
| 16:10 – 16:30 | Correlation study of morphology, electrical activation and contact
formation of ion implanted 4H-SiC M.H. Weng, F. Roccaforte, F.Giannazzo, S. Di Franco, C. Bongiorno, E. Zanetti, A. Ruggiero, M. Saggio and V. Raineri |
| 16:30 – 16:50 | Characterization of semiconductor films epitaxially grown on
thin metal oxide buffer layers P. Zaumseil, A. Giussani, O. Seifarth, T. Arguirov, A. Schubert and T. Schroeder |
| 16:50 – 17:10 | Comparative study of electrical and optical properties of plastically
deformed Si N. Yarykin and O. Feklisova |
| 19:00 – open end | CONFERENCE DINNER |
| Friday (October 02, 2009) | |
| Session: Nanostructures and Novel Devices | |
| Session chair: P. Wilshaw | |
| 09:00 – 09:40 | Current status of graphene transistors M.C. Lemme (invited) |
| 09:40 – 10:00 | Theoretical study of ionized impurities in silicon nanowire
MOS transistors M. Bescond, M. Lannoo, L. Raymond and F. Michelini |
| 10:00 – 10:20 | Optical properties of Si nanowires catalyzed by arrays of gold
nanoparticles with controlled diameters G. Brönstrup, D. Lerose, M.G. Jenke, Ch. Niederberger, J. Hankache, M. Bechelany, L. Philippe, I. Utke, J. Michler and S. Christiansen |
| 10:20 – 10:40 | COFFEE BREAK |
| Session chair: A. Luque | |
| 10:40 – 11:20 | Clean energy: The case for thermoelectrics and photovoltaics A. Boukai (invited) |
| 11:20 – 11:40 | Axial heterojunctions in Si nanowires by Pulsed Laser Deposition:
Doping and Si/Ge layer stacks B. Eisenhawer, A. Berger, D. Zhang, J. Michler and S. Christiansen |
| 11:40 – 11:50 | Closing Remarks |
| 12:00 – 13:00 | LUNCH |
| 13:00 | Bus departure to Berlin |
| POSTER SESSION 1 (Sunday and Monday) | |
| Photovoltaic Silicon | |
| P1 | Growth of silicon carbide filaments in multicrystalline silicon
for solar cells H.J. Möller, C. Funke, J. Bauer, S. Köstner, H. Straube and O. Breitenstein |
| P2 | Analysis of silicon carbide and silicon nitride precipitates
in block cast multicrystalline silicon M. Holla, T. Arguirov, W. Seifert and M. Kittler |
| P3 | Investigations on the behaviour of carbon during inductive melting
of multicrystalline silicon L. Raabe, J. Ehrig, S. Würzner, O. Pätzold, M. Stelter and H.J. Möller |
| P4 | An investigation into fracture of multi-crystalline silicon B.R. Mansfield, D.E.J. Armstrong, P.R. Wilshaw and J.D. Murphy |
| P5 | Hydrogen-induced passivation of grain-boundary defects in polycrystalline
silicon N.H. Nickel |
| P6 | Bulk passivation of defects in multi-crystalline silicon solar
cells by a-SiNx:H layers E. Cornagliotti, H.F.W. Dekkers, C. Prastani, J. John, E. Van Kerschaver, J. Poortmans and R.P. Mertens |
| P7 | Passivation of Si surfaces investigated by in-situ photoluminescence
techniques J. Rappich, X. Zhang, D.M. Rosu, U. Schade and K. Hinrichs |
| P8 | Study of internal versus external gettering of iron during slow
cooling processes for silicon solar cell fabrication J. Hofstetter, J.-F. Lelièvre, C. del Cañizo and A. Luque |
| P9 | Characterization of thin film photovoltaic material using photoluminescence
and Raman spectroscopy T. Mchedlidze, T. Arguirov, S. Kouteva-Arguirova and M. Kittler |
| P10 | Epitaxial film silicon solar cells by hot wire chemical vapor
deposition below 750 C K. Alberi, I.T. Martin, C.W. Teplin, E. Iwaniczko, Y. Xu, A. Duda, P. Stradins, S.W. Johnston, H.R. Moutinho, H.M. Branz and D.L. Young |
| P11 | 3rd generation solar cell prototype based on chemically formed
silicon nanowires: Processing, optical and photovoltaic properties V.A. Sivakov, G. Brönstrup, A. Gawlik, A. Berger and S.H. Christiansen |
| P12 | SEM characterization of silicon layers grown on carbon foil S.K. Brantov, A.V. Eltzov, O.V. Feklisova and E.B. Yakimov |
| P13 | An express method for the study of planar homogeneity of diffusion
length in multicrystalline solar silicon V. Litovchenko, A. Sarikov and A. Evtukh |
| Defect Aspects and Gettering | |
| P14 | Anomalous out-diffusion profiles of nitrogen in silicon V.V. Voronkov, R. Falster and S. Senkader |
| P15 | Growth of heavily phosphorus-doped (111) silicon crystals F. Liu, H.P. Han, Y.M. Wang and L.Y. Tong |
| P16 | Study of the mechanisms of oxygen precipitation in RTA annealed
Cz-Si wafers V. Litovchenko, I. Lisovskyy, M. Voitovych, A. Sarikov, S. Zlobin, V. Kladko and V. Machulin |
| P17 | Dislocation states and deformation-induced point defects in
plastically deformed germanium S. Shevchenko and A. Tereshchenko |
| P18 | Defect generation during plastic deformation of Si-rich Cz-grown
SiGe crystals N. Yarykin and N.V. Abrosimov |
| P19 | Boron and phosphorus implantation induced electrically active
defects in p-type silicon J. Senawiratne, J.S. Cites, J.G. Couillard, J. Moll, C.A. Kosik Williams and P.G. Whiting |
| P20 | Suppression of pores formation on a surface of p-Si by laser
radiation A. Medvid, P. Onufrijevs, L. Fedorenko, N.Yusupov and E. Daukšta |
| P21 | Far-action defects formation and gettering in 6H-SiC Lely crystals
irradiated by Bi D.B. Shustov, E.V. Kolesnikova, E.V. Kalinina, V.A. Skuratov and M.V. Zamoryanskaya |
| P22 | Evaluation criteria for efficient gettering applied for Cu and
Ni impurities in Si wafers D. Kot , G. Kissinger M. A. Schubert, A. Sattler and W. von Ammon |
| P23 | Aluminum gettering of iron in silicon D. Abdelbarey, V. V. Kveder, W. Schröter and M. Seibt |
| P24 | Spatially resolved defect analysis in Cz-silicon after copper-nickel
co-precipitation by virtue of light-beam-induced current measurements P. Saring, C. Rudolf, L. Stolze, A. Falkenberg and M. Seibt |
| POSTER SESSION 2 (Tuesday and Wednesday) | |
| Defect Aspects, Characterization and Modeling | |
| P25 | Delineation of microdefects in silicon substrates by chromium-free
preferential etching solutions and laser scattering tomography M. Pellowska, D. Possner, D. Kot, G. Kissinger and B.O. Kolbesen |
| P26 | Vacancies and self-interstitials dynamics in silicon wafers O. Caha, J. Kubena, A. Kubena and M. Meduna |
| P27 | Interaction of point defects with impurities in the Si-SiO2
system and its influence on the properties of the interface D. Kropman, E. Mellikov, K. Lott, T. Kärner, I. Heinmaa, T. Laas, A. Medvid, W. Skorupa, S. Prucnal, S. Zvyagin, E. Cizmar, M. Ozerov and J. Woznitsa |
| P28 | DLTS studies of carbon related complexes in irradiated n- and
p-silicon L.F. Makarenko, F.P. Korshunov, S.B. Lastovski, L.I. Murin and M. Moll |
| P29 | The effect of germanium doping on the production of carbon–related
defects in electron- irradiated Czochralski silicon C.A. Londos, A. Andrianakis, D. Aliprantis, E. Sgourou, V.V. Emtsev and H. Ohyama |
| P30 | Formation of radiation hardened SOI structures by N+
implantation in SiO2 film and subsequent hydrogen transfer of Si layer I.E. Tyschenko and V.P. Popov, presented by I.V. Antonova |
| P31 | Onset of blistering in low-dose hydrogen implanted and then
hydrogen plasma treated Si: Formation of porous-like structures and layer
exfoliation processes A. Ulyashin, H. Nordmark, A. Misiuk, J. C. Walmsley and R. Holmestad |
| P32 | Thermal optimization of Cz silicon single crystal growth A.I. Prostomolotov, N.A. Verezub and M.G. Milvidskii |
| P33 | Comparison of efficiency and kinetics of phosphorus-diffusion
and aluminum gettering of metal impurities in silicon: A simulation study M.A. Falkenberg, D. Abdelbarey, V.V. Kveder and M. Seibt |
| P34 | Atomistic simulations of point defect diffusion in Si and SiGe:
A powerful tool for point defect engineering P. Pochet, D. Caliste, K. Rushchanskii, F. Lancon and T. Deutsch |
| P35 | Effect of growth conditions and catalyst material on nanowhisker
morphology: Monte Carlo simulation A.G. Nastovjak, I.G. Neizvestny and N.L. Shwartz presented by I.V. Antonova |
| P36 | Versatile simulation tool and novel measurement method for electrical
characterization of semiconductors N. Schüler, T. Hahn, K. Dornich and J.R. Niklas |
| P37 | Simulation of XBIC contrast of precipitates in Si E.B. Yakimov |
| P38 | Oxygen trimer in silicon: an infrared absorption study L.I. Murin, V.P. Markevich, B.G. Svensson and J.L. Lindström |
| P39 | In-situ observation of oxygen precipitation in silicon with
high energy X-rays H. Grillenberger and A. Magerl |
| P40 | Electron-beam-induced current study of breakdown behavior of
high-k gate MOSFETs J. Chen, T. Sekiguchi, M. Takase, N. Fukata, R. Hasunuma, K. Yamabe, M. Sato, K. Yamada and T. Chikyo |
| P41 | Investigation of the mechanical properties of thin films by
bulge test A. Hémel, T. Schenk, A. Jacques and T. Kruml |
| P42 | Defect characterization of poly-Ge and VGF-grown Ge material M. Holla, T. Arguirov, G. Jia, M. Kittler, Ch. Frank-Rotsch, F. Kiessling and P. Rudolph |
| Nanostructures | |
| P43 | Scaling in quantum transport in silicon nano-transistors U. Wulf and H. Richter |
| P44 | Silicon cluster aggregation in silica layers H.-J. Fitting, L. Fitting-Kourkoutis, R. Salh, E.V. Kolesnikova, M.V. Zamoryanskaya and B. Schmidt |
| P45 | Feedback effect on the self-organized nanostructures formation
on silicon upon femtosecond laser ablation O. Varlamova, M. Ratzke and J. Reif |
| P46 | Confinement levels in passivated SiGe/Si quantum well structures I.V. Antonova, E.P. Neustroev, S.A. Smagulova, M.S. Kagan, P.S. Alekseev, S.K. Ray, N. Sustersic and J. Kolodzey |
| P47 | Structural transformations in Si nanostructures induced by swift
heavy ions G.A. Kachurin, S.G. Cherkova, D.V. Marin, A.G. Cherkov and V.A. Skuratov, presented by I.V. Antonova |
| P48 | Impurity doping of Si nanowires synthesized by laser N. Fukata, M. Seoka, N. Saito, K. Sato, J. Chen, T. Sekiguchi and K. Murakami |