Topics
GADEST 2009 will encourage but not limit submissions to the following topics
• Large diameter crystal growth
• Crystalline silicon for solar cells: single crystals, multi-crystalline Si, ribbons, Si thin films on substrates
• Influence of Si feedstock quality on solar cell performance
• Silicon-based materials and advanced semiconductor materials (strained Si, SOI, SiGe, SiC, Ge)
• Impurities in Si: oxygen, carbon, nitrogen, fluorine, metals
• Modeling and simulation of defects in Si/semiconductors
• Defect engineering in microelectronics and photovoltaics
• Gettering and hydrogen passivation
• Defect and impurity characterization (physical and electrical)
• Nanostructures and devices: nanocrystals, nanowires, quantum dots
• Silicon-based heterostructures
• Strain engineered materials
• Silicon-based photonics and photonic crystals
• Defect aspects for new devices: co-integration of Ge and III-V, graphenes, organo-silica devices