Sub-Project: SiGe bipolar technology for an UHR-C demonstrator

The objective of the co-operation of TELEFUNKEN Semiconductors in the joint project EASY-A is it to realize highly integrated front-end circuits for the EASY-A demonstrator “UHR-C (Ultra-high-rate cordless)” utilizing the Silicon-Germanium technology of TELEFUNKEN . This technology (SiGe2RF) is commercially available and in its electrical characteristics is applicable for the project to a large extent. For the adaptation to the requirements of the demonstrator circuits, however, an element modification (HBT-Transistor) is required from current view. The accomplishment of the planned work is performed here in close co-operation with the project partner Ulm University .

Substantial aspects within the research and investigation of the SiGe bipolar technology for the realization of an EASY-A demonstrator (UHR-C) are:

The SiGe2RF technology of the TELEFUNKEN Semiconductors is well established and qualified in the mass production.
The process has few lithography mask steps only in the comparison to RF-CMOS or SiGe BiCMOS, respectively.
Due to this fact and due to the minimum structural widths of 0.8 µm the mask and process costs are considerably lower.
Thus again the necessary integrated circuits can be manufactured economically and in large quantities.

The aforementioned points are the essential arguments for the investigation and the realization of an EASY-A demonstrator in SiGe bipolar technology. The fundamental components for the application at 60 GHz are:

Voltage Controlled Oscillator (VCO)
Frequency Divider
Frequency Multiplier
Mixer
IF Amplifier

Definition of the principal goal of TELEFUNKEN Semiconductors within the project is the preparation of the modified HBT transistors as well as the required modified design tools (CAD). In addition and in the context of a project MPW service the technology runs together with the associated measuring technique and with a backend service are performed.

In the scope of the work planned in this project, front-end demonstrator circuits are developed and realized. These circuits have to be integrated into an overall system for the short-range (line of sight) data communication with 60 GHz. The potentiality has to be demonstrated that such kind of data transmission system is realizable with integrated circuits based on SiGe bipolar technology and can be provided as mass products at a low price. According to experience there are still some iterations necessary from the demonstrator to the finished, fully and qualified final product.

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Sub-Projects Sub-Project BMW Sub-Project EADS-IW Sub-Project FhG-HHI Sub-Project FhG-IAF Sub-Contractor Humboldt-Uni Berlin Sub-Project IHP Sub-Project IMST Sub-Project Infineon Sub-Project MEDAV Sub-Project Meytec Sub-Contractor Ruhr-Uni Bochum Sub-Project Siemens Sub-Project TELEFUNKEN Sub-Project TES Sub-Contractor TU Berlin Sub-Project TU Dresden Sub-Contractor TU Ilmenau Sub-Project Universität Ulm	TELEFUNKEN Semiconductors GmbH & Co. KG Operations-Foundry Dr. Wolfgang Schwerzel Lise Meitner Str. 15 89081 Ulm www.telefunkensemi.com Sub-Project: SiGe bipolar technology for an UHR-C demonstrator The objective of the co-operation of TELEFUNKEN Semiconductors in the joint project EASY-A is it to realize highly integrated front-end circuits for the EASY-A demonstrator “UHR-C (Ultra-high-rate cordless)” utilizing the Silicon-Germanium technology of TELEFUNKEN . This technology (SiGe2RF) is commercially available and in its electrical characteristics is applicable for the project to a large extent. For the adaptation to the requirements of the demonstrator circuits, however, an element modification (HBT-Transistor) is required from current view. The accomplishment of the planned work is performed here in close co-operation with the project partner Ulm University . Substantial aspects within the research and investigation of the SiGe bipolar technology for the realization of an EASY-A demonstrator (UHR-C) are: The SiGe2RF technology of the TELEFUNKEN Semiconductors is well established and qualified in the mass production. The process has few lithography mask steps only in the comparison to RF-CMOS or SiGe BiCMOS, respectively. Due to this fact and due to the minimum structural widths of 0.8 µm the mask and process costs are considerably lower. Thus again the necessary integrated circuits can be manufactured economically and in large quantities. The aforementioned points are the essential arguments for the investigation and the realization of an EASY-A demonstrator in SiGe bipolar technology. The fundamental components for the application at 60 GHz are: Voltage Controlled Oscillator (VCO) Frequency Divider Frequency Multiplier Mixer IF Amplifier Definition of the principal goal of TELEFUNKEN Semiconductors within the project is the preparation of the modified HBT transistors as well as the required modified design tools (CAD). In addition and in the context of a project MPW service the technology runs together with the associated measuring technique and with a backend service are performed. In the scope of the work planned in this project, front-end demonstrator circuits are developed and realized. These circuits have to be integrated into an overall system for the short-range (line of sight) data communication with 60 GHz. The potentiality has to be demonstrated that such kind of data transmission system is realizable with integrated circuits based on SiGe bipolar technology and can be provided as mass products at a low price. According to experience there are still some iterations necessary from the demonstrator to the finished, fully and qualified final product.