Publications 2022

Script list Publications

(1) Determination of optical constants and scattering properties of transparent polymers for use in optoelectronics
J. Bauer, O. Fursenko, F. Heinrich, M. Gutke, E. Kornejew, O. Broedel, B. Dietzel, A. Kaltenbach, M. Burkhardt, M. Edling, P. Steglich, M. Herzog, S. Schrader
Optical Materials Express 12, 204 (2022)
DOI: 10.1364/OME.434715

(2) Ultra-Wideband Frequency Doubler with Differential Outputs in SiGe BiCMOS
C. Bohn, M. Kaynak, T. Zwick, A.C. Ulusoy
Proc. IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2022), (2022)

(3) Etch Mechanism of an Al2O3 Hard Mask in the Bosch Process
M. Drost, St. Marschmeyer, M. Fraschke, O. Fursenko, F. Bärwolf, I. Costina, M.K. Mahadevaiah, M. Lisker
Micro and Nano Engineering 14, 100102 (2022)
The etching of high aspect ratio structures in silicon via the Bosch process is essential in modern technologies such as microelectromechanical systems (MEMS) and through-silicon vias (TSV) fabrication. The process can be very demanding on the mask selectivity due to long etching times, and it has been shown that an Al2O3 hard mask is very suitable in this regard, as it offers significantly higher selectivity compared to the conventional SiO2 or resist masks. In this work, we employ a combination of Scanning Electron Microscopy (SEM), Spectroscopic Ellipsometry (SE) and X-Ray Photoelectron Spectroscopy (XPS) depth profiling to scrutinize the Al2O3 mask etching mechanism and therefore the origin of the extraordinary high selectivity. We demonstrate that by increasing the passivation step time, a thicker fluorocarbon polymer layer is formed on the Al2O3, and Al2O3 is then removed with a minuscule average etch rate of ~0.01 nm/min. XPS depth profiling reveals that during Deep Reactive Ion Etching (DRIE) using the Bosch process, an AlFx layer is formed between the polymer and Al2O3. As AlFx is non-volatile, it requires sputtering to be removed. If the polymer layer is thick enough to attenuate the incoming ions such that their energy is not sufficient to lead to desorption of AlFx, such as when using a longer passivation time, the mask is not eroded. By investigating the surface after different amounts of DRIE cycles, we also obtained information about the formation rate of AlFx and the changes in the Al2O3 and polymer thicknesses over the course of a DRIE process. These findings further expand the knowledge of DRIE and can help process engineers to tailor the processes accordingly.

(4) Atomic Layer Deposition of the Conductive Delafossite PtCoO2
D. Hagen, J. Yoon, H. Zhang, B. Kalkofen, M. Slinskas, F. Börrnert, H. Han, S. Parkin
Advanced Materials Interfaces 2200013 (2022)

(5) Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
G. Iacobucci, L. Paolozzi, P. Valerio T. Moretti F. Cadoux R. Cardarelli, R.Cardella, S. Debieux, Y. Favre, D. Ferrere, S. Gonzalez-Sevilla, Y. Gurimskaya, R. Kotitsa, C. Magliocca, F. Martinelli, M. Milanesio, M. Munker, M. Nessi, A. Picardi, J. Saidi, H. Rücker, V. Vicente Barreto Pinto, S. Zambito
Journal of Instrumentation 17, 02019 (2022)
(SG13G3)

(6) SiGe BiCMOS as Enabling Technology for Next Generation RF & THz Systems
G. Kahmen
Proc. European Microwave Integrated Circuits Conference (EuMIC 2021), abstr. (2022)

(7) 180 GBd Electronic-Plasmonic IC Transmitter
D. Moor, Y. Fedoryshyn, H. Langenhagen, J. Müllrich, R. Schmid, Ch. Uhl, M. Möller, U. Koch, Y. Horst, B.I. Bitachon, W. Heni, B. Baeuerle, M. Destraz, H. Xu, Delwin, L. Elder, L.E. Johnson, P. Bakopoulos, E. Mentovich, L. Zimmermann, J. Leuthold
OFC 2022, M2D.3 (2022)
(plaCMOS)

(8) Influence of Process Parameters on Aluminum to Aluminum Wafer Bonding
S. Schulze, T. Voß, P. Krüger, M. Fraschke, P. Kulse, M. Wietstruck
IEEE Transactions on Components, Packaging and Manufacturing Technology 12(3), 578 (2022)

(9) Surface Plasmon Resonance (SPR) Spectroscopy and Photonic Integrated Circuit (PIC) Biosensors: A Comparative Review
P. Steglich, G. Lecci, A. Mai
Sensors 22, 2901 (2022)

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