Wafer Level Measurement

On Wafer Electrical Characterization in Cleanroom and Lab:

DC and CV Parameter Test

  • SPC (Statistical Parameter Control)
  • reliability testing (-60°C -125°C)
  • yield test, failure analysis
  • measurement of MOS interface and bulk properties
  • electrostatic discharge (ESD) characterization

Methods:

  • DC/CV and pulsed-signal techniques using single probes, wedges and probecards
  • simultaneous HF/LF MOS-CV technique in non steady-state non-equilibrium for investigation of interface and bulk properties of the MOS system  
  • ring oscillator measurements for determining of gate delays in sub ps range
  • TLP (Transmission Line Pulser) and HBM (Human Body Model) for ESD testing
  • 1/f noise measurements

Equipment:

  • DC-Parametertesters (Keithley S630) with fullautomatic 8“ waferprobers in cleanroom and labs
  • IHP proprietary HF/LF MOS-CV setup
  • DC/CV Parameter Testsystems (Agilent 4156C, 4294A) with semi-automatic 8“ and 12“ waferprobers
  • cryogenic probestation for DC-, RF- and S-Parameter mesurements, 4“ chuck, T down to liquid He-temperature
  • 1/f noise measurements (Proplus 9812DX)
  • TLP, vf-TLP and HBM measurements (HPPI TLP-4010C )

Mixed Signal Prototype Test

  • prototype characterization of IHP- and custom designs fabricated in IHP‘s pilot line

Methods:

  • chip testing with analog and digital test signals
  • bit error rate testing (BERT) up to 32 Gbit/s

Equipment:        

  • PXI-System with flexible modular instrumentation architecture, rugged PC-based high-performance mixed mode measurement system
  • agilent BERT system: pseudorandom binary sequence generator (PRBS)
  • 70 GHz sampling oscilloscope: Agilent Infiniium DCA-X 86100D
  • pattern generator: Agilent N4951B
  • serial BERT: Agilent N4960A

RF S-Parameter,  RF Noise

  • S Parameter measurements for ultra fast HBT devices with fmax  > 500 GHz
  • RF noise parameter characterization

Methods:

  • two port S-parameter measurement
  • 110 GHz - 170 GHz (300K - 358K)
  • 1 kHz - 120 GHz (300K - 358K)
  • 10 MHz - 67 GHz (233K - 398K )
  • 10 MHz - 50 GHz (300K - 358K)
  • Four port S-parameter measurement (or true differential two port)
  • 10 MHz - 50 GHz
  • 1 kHz -120 GHz

Equipment:        

S Parameter

  • Agilent Network Analyzer: E7350A, E8364A, 8720ES, E8361A
  • Keysight Network Analyzer: N5245A, N5291A
  • Rohde & Schwarz: ZVA24
  • RF Noise: Noise source N4002A @ 2 - 26.5 GHz (Temp. 300 K - 358 K)

Dr.-Ing. Roland Sorge

IHP
Im Technologiepark 25
15236 Frankfurt (Oder)
Germany

Phone: +49 335 5625 127
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