Publications 2023
Script list Publications
(1) Electrical and Wave Digital Modeling of CMOS-Based Ring Oscillators
B. Al Beattie, B. Muralidhar, M. Uhlmann, G. Kahmen, R. Rieger, K. Ochs
Proc. 30th IEEE International Conference on Electronics Circuits and Systems (ICECS 2023), (2023)
DOI: 10.1109/ICECS58634.2023.10382939, (Neutronics)
(2) Wave Digital Emulation of an Enhanced Compact Model for RRAM Devices with Multilevel Capability
B. Al Beattie, E. Perez-Bosch Quesada, M. Uhlmann, E. Perez, G. Kahmen, E. Solan, K. Ochs
IEEE Transactions on Nanotechnology 22, 753 (2023)
DOI: 10.1109/TNANO.2023.3328821, (KI-IoT)
The reliable and compact modeling of RRAM devices is crucial for supporting the development of novel technologies including them. The latter includes a wide range of applications, such as in-memory computing in neuromorphic networks or memristive logic. A major advantage of the considered HfO2-based RRAM devices is their CMOS-compatibility, which allows them to already be utilized in present applications. However, one problem with RRAMs is that their fabrication still leads to device variabilities. This makes it challenging to test the functionality of aspiring technologies utilizing them in an experimental fashion.
This work is dedicated to the compact modeling and efficient emulation of 1T-1R RRAM devices. Specifically, we aim to provide an enhanced model, based on the Stanford-PKU model, that can be used on any simulation platform such as SPICE, VERLIOGA, or even standard ODE solvers to simulate multilevel capable RRAM devices. Furthermore, we provide an algorithmic model, based on the wave digital concept, which allows for emulating the considered RRAM device in real-time. Using the latter, we show the hysteresis of our enhanced model to exhibit astounding resemblance with real device measurements.
(3) Wave Digital Emulation of an Enhanced Compact Model for RRAM Devices with Multilevel Capability
B. Al Beattie, E. Perez-Bosch Quesada, M. Uhlmann, E. Perez, G. Kahmen, E. Solan, K. Ochs
IEEE Transactions on Nanotechnology 22, 753 (2023)
DOI: 10.1109/TNANO.2023.3328821, (KI-PRO)
The reliable and compact modeling of RRAM devices is crucial for supporting the development of novel technologies including them. The latter includes a wide range of applications, such as in-memory computing in neuromorphic networks or memristive logic. A major advantage of the considered HfO2-based RRAM devices is their CMOS-compatibility, which allows them to already be utilized in present applications. However, one problem with RRAMs is that their fabrication still leads to device variabilities. This makes it challenging to test the functionality of aspiring technologies utilizing them in an experimental fashion.
This work is dedicated to the compact modeling and efficient emulation of 1T-1R RRAM devices. Specifically, we aim to provide an enhanced model, based on the Stanford-PKU model, that can be used on any simulation platform such as SPICE, VERLIOGA, or even standard ODE solvers to simulate multilevel capable RRAM devices. Furthermore, we provide an algorithmic model, based on the wave digital concept, which allows for emulating the considered RRAM device in real-time. Using the latter, we show the hysteresis of our enhanced model to exhibit astounding resemblance with real device measurements.
(4) Wave Digital Emulation of an Enhanced Compact Model for RRAM Devices with Multilevel Capability
B. Al Beattie, E. Perez-Bosch Quesada, M. Uhlmann, E. Perez, G. Kahmen, E. Solan, K. Ochs
IEEE Transactions on Nanotechnology 22, 753 (2023)
DOI: 10.1109/TNANO.2023.3328821, (MIMEC)
The reliable and compact modeling of RRAM devices is crucial for supporting the development of novel technologies including them. The latter includes a wide range of applications, such as in-memory computing in neuromorphic networks or memristive logic. A major advantage of the considered HfO2-based RRAM devices is their CMOS-compatibility, which allows them to already be utilized in present applications. However, one problem with RRAMs is that their fabrication still leads to device variabilities. This makes it challenging to test the functionality of aspiring technologies utilizing them in an experimental fashion.
This work is dedicated to the compact modeling and efficient emulation of 1T-1R RRAM devices. Specifically, we aim to provide an enhanced model, based on the Stanford-PKU model, that can be used on any simulation platform such as SPICE, VERLIOGA, or even standard ODE solvers to simulate multilevel capable RRAM devices. Furthermore, we provide an algorithmic model, based on the wave digital concept, which allows for emulating the considered RRAM device in real-time. Using the latter, we show the hysteresis of our enhanced model to exhibit astounding resemblance with real device measurements.
(5) Characterization and Optimization of the Heat Dissipation Capability of a Chip-on-Board Package using Finite Element Methods
Z. Cao, M. Stocchi, M. Wietstruck, T. Mausolf, C. Carta, M. Kaynak
IEEE Transactions on Components, Packaging and Manufacturing Technology 13(3), 346 (2023)
DOI: 10.1109/TCPMT.2023.3259199, (Hytech)
The present study endeavors to investigate the thermal dissipation capability of a chip-on-board package by means of a comprehensive experimental and numerical analysis. For this purpose, a BiCMOS chip is designed and fabricated in conjunction with three different printed circuit board (PCB) configurations, including a single-sided board, a thermal via board, and a copper frame board. Transient thermal measurements are carried out on all three packages, and the results are subsequently transformed into cumulative structure functions. Then the finite element models are established for each package configuration, and their validity is confirmed through comparison with the experimental structure functions. The models are then characterized in accordance with the Joint Electron Device Engineering Council (JEDEC) 38-set boundary conditions, followed by a series of optimizations targeted toward the PCB, including the board stack-up and the board sizes. Parametric studies are performed to quantitatively assess the impact of these parameters on the thermal performance. Finally, the present study provides a comprehensive discussion of the optimal application scenarios for each board configuration, with a view to achieving good thermal performance. The findings of this study will contribute to the development of more thermally effective chip-on-board packages for high-performance electronic systems.
(6) Characterization and Optimization of the Heat Dissipation Capability of a Chip-on-Board Package using Finite Element Methods
Z. Cao, M. Stocchi, M. Wietstruck, T. Mausolf, C. Carta, M. Kaynak
IEEE Transactions on Components, Packaging and Manufacturing Technology 13(3), 346 (2023)
DOI: 10.1109/TCPMT.2023.3259199, (FLEXCOM)
The present study endeavors to investigate the thermal dissipation capability of a chip-on-board package by means of a comprehensive experimental and numerical analysis. For this purpose, a BiCMOS chip is designed and fabricated in conjunction with three different printed circuit board (PCB) configurations, including a single-sided board, a thermal via board, and a copper frame board. Transient thermal measurements are carried out on all three packages, and the results are subsequently transformed into cumulative structure functions. Then the finite element models are established for each package configuration, and their validity is confirmed through comparison with the experimental structure functions. The models are then characterized in accordance with the Joint Electron Device Engineering Council (JEDEC) 38-set boundary conditions, followed by a series of optimizations targeted toward the PCB, including the board stack-up and the board sizes. Parametric studies are performed to quantitatively assess the impact of these parameters on the thermal performance. Finally, the present study provides a comprehensive discussion of the optimal application scenarios for each board configuration, with a view to achieving good thermal performance. The findings of this study will contribute to the development of more thermally effective chip-on-board packages for high-performance electronic systems.
(7) D-Band Flip-Chip Packaging with Wafer-Level Cu-Pillar Bumps
Z. Cao, M. Stocchi, Ch. Wipf, J. Lehmann, L. Li, S. Tolunay Wipf, M. Wietstruck, C. Carta, M. Kaynak
Proc. 32th IEEE Conference on Electrical Performance on Electronic Packaging and Systems (EPEPS 2023), (2023)
DOI: 10.1109/EPEPS58208.2023.10314877, (FLEXCOM)
(8) An Advanced Finite Element Model of the Cu Pillar Solder Reflow Assembly
Z. Cao, B. Pekkolay, A. Okur, B. Heusdens, C. Carta, M. Kaynak
Proc. 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2023), (2023)
DOI: 10.1109/EuroSimE56861.2023.10100808, (FLEXCOM)
(9) An Advanced Finite Element Model of the Cu Pillar Solder Reflow Assembly
Z. Cao, B. Pekkolay, A. Okur, B. Heusdens, C. Carta, M. Kaynak
Proc. 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2023), (2023)
DOI: 10.1109/EuroSimE56861.2023.10100808, (SMARTWAVE)
(10) Towards Robust Process Design Kits with a Scalable DevOps Quality Assurance Platform
A. Datsuk, P. Ostrovskyy, F. Vater, C. Wieden
Proc. 31st IFIP/IEEE Conference on Very Large Scale Integration (VLSI-SoC 2023), (2023)
DOI: 10.1109/VLSI-SoC57769.2023.10321846, (Design Kit)
(11) A 200-260-GHz Voltage-Controlled Distributed Attenuator in 130-nm BiCMOS:C Technology
M.H. Eissa, G. Kahmen
IEEE Microwave and Wireless Technology Letters (MWTL) 33(12), 1622 (2023)
DOI: 10.1109/LMWT.2023.3325303, (Open 6G Hub)
This work presents a wideband passive variable voltage-controlled attenuator (VVA) to control signal powers above 200 GHz. The VVA is manufactured in a 130nm BiCMOS technology with fT / fmax = 300 / 500 GHz. The design is based on a distributed T-attenuator architecture. An Inductive based approach is followed rather than a transmission line architecture to reduce silicon-area. A series varistors was also excluded to enhance the minimum insertion loss (IL) at this high frequency. The design methodology followed the goal to achieve a large bandwidth (BW) across different attenuation states while maintaining low minimum IL. The VVA is capable of handling an input power of up to 18 dBm with compression of 0.5 dB. Measurements show a minimum IL of 5.5 dB within a 3-dB BW of 60 GHz from 200 to 260 GHz across a 13 dB of voltage-controlled attenuation range. The core circuit consumes 0.015mm2 of silicon area. With these specifications the VVA suits very well for highlylinear wideband VGAs for sub-THz transmitters.
(12) Image-Rejection Up-/Down-Converter LO Distribution Chain for 5G mm-Wave Phased-Array Systems
A. Franzese, N. Maletic, R. Negra, A. Malignaggi
Proc. IEEE Radio & Wireless Symposium (RWS 2023), 14 (2023)
DOI: 10.1109/RWS55624.2023.10046204, (Taranto)
(13) Wideband and Efficient 256-GHz Subharmonic-Based FMCW Radar Transceiver in 130-nm SiGe BiCMOS Technology
R. Hasan, M.H. Eissa, W.A. Ahmad, H.J. Ng, D. Kissinger
IEEE Transactions on Microwave Theory and Techniques 71(1), 59 (2023)
DOI: 10.1109/TMTT.2022.3207995, (T-KOS)
This article proposes a fully integrated single-channel bistatic frequency-modulated continuous-wave (FMCW) radar transceiver (TRX) that operates at a center frequency of 256 GHz. The main focus of this work is to realize a wideband and efficient radar transceiver that offers high resolution of target detection in the short-range FMCW radar sensing application. The radar transceiver chip is designed and manufactured using 130 nm SiGe BiCMOS technology which offers heterojunction bipolar transistors (HBTs) with fT/fMAX of 300/500 GHz. The transmitter (TX) of the radar transceiver is based on a fundamentally operated multiplier - by - 8 chain architecture that offers a 3 - dB bandwidth of around 65 GHz with a saturated output power of -5.4 dBm. On the other hand, the receiver (RX) is based on a sub-harmonic architecture that provides a conversion gain (CG) of 10.4 dB with an average noise figure (NF) of 23.5 dB. This transceiver is realized with two integrated on-chip folded dipole antennas. The antenna offers high antenna gain and radiation efficiency due to the use of the selective localized backside etching (LBE) technique. This chip consumes 305 mW of power from a 3.3 V supply and occupies a silicon area of 3.3 mm2. The radar range measurement is performed in the anechoic chamber, and it shows the maximum dynamic range of around 32 dB at the 1m range of the target.
(14) A Broadband D-Band Power Detector System in SiGe 130 nm BiCMOS Technology
C. Herold, T. Mausolf, C. Carta, A. Malignaggi
Proc. 26th European Microwave Week (EuMW 2023), 145 (2023)
DOI: 10.23919/EuMIC58042.2023.10288992, (6G-RIC)
(15) Random and Static Phase Errors in a PLL Array for Millimeter-Wave Frequency Generation
F. Herzel, C. Carta, G. Fischer
Proc. 21st IEEE International New Circuits And Systems Conference (NEWCAS 2023), (2023)
DOI: 10.1109/NEWCAS57931.2023.10198063, (AMX IP)
(16) A 128 Gb/s 7-Tap FIR Filter in 130 nm SiGe:C BiCMOS for High-Speed Channel Equalization
M. Inac, A. Peczek, F. Gerfers, A. Malignaggi
IEEE Microwave and Wireless Components Letters 33(2), 169 (2023)
DOI: 10.1109/LMWC.2022.3212277
In this letter, a fully analog differential 7-tap 128 Gb/s finite impulse response (FIR) filter using IHP’s 130 nm SG13G2 SiGe:C BiCMOS process is presented. The design includes microstrip transmission line (TL) delay structures for introducing 3 ps tap delay, which corresponds to a third-bit period at 112 Gb/s. Detailed measurements show that the filter is capable of eye diagram improvements up to 128 Gb/s while consuming 693 mW, demonstrating its suitability for new generation 400 Gb/s communication channels. To the best of the authors’ knowledge, this is the fastest NRZ equalization by a fully analog FIR filter, to be found in the literature.
(17) Tunable and Highly Power Efficient Traveling Wave Amplifier in SiGe BiCMOS for Optical Modulators
M. Inac, F. Korndörfer, F. Gerfers, A. Malignaggi
Proc. Radio Wireless Week (RWW 2023), 58 (2023)
DOI: 10.1109/SiRF56960.2023.10046248
(18) DC-Coupled Ultra Broadband Differential to Single-Ended Active Balun in 130-nm SiGe BiCMOS Technology
F. Iseini, A. Malignaggi, F. Korndörfer, G. Kahmen
IEEE Microwave and Wireless Components Letters 33(3), 307 (2023)
DOI: 10.1109/LMWC.2022.3216347, (100G)
The dc-coupled (DCC) broadband operation is a fundamental requirement in many applications, especially in optical communication systems. However, circuits allowing differential to single-ended conversion in a DCC fashion are very rare to be found in the literature. In this letter, a novel differential to single-ended ultrabroadband DCC balun in a 130-nm SiGe BiCMOS technology featuring ft/fmax of 300/500 GHz is presented. A circuit analysis and a performance comparison between the proposed balun and two other configurations which are commonly used to convert a differential signal to a single-ended one is carried out. The design of the mentioned balun is described focusing on the trade-offs between gain, bandwidth (BW) and linearity. Measurement results show how the presented topology can achieve a low-frequency power gain of −7 dB and a 1 dB BW of 80 GHz, along with a total harmonic distortion (THD) of 7%.
(19) Analysis and Implementation of DC-Coupled Compact and Power Efficient Lumped Driver for Single-Ended Optical Modulators in SiGe 250 nm BiCMOS Technology
F. Iseini, A. Malignaggi, M. Inac, G. Kahmen
Proc. IEEE International Symposium on Circuits and Systems (ISCAS 2023), (2023)
DOI: 10.1109/ISCAS46773.2023.10182091, (100G)
(20) Monolithically Integrated Optoelectronic Transmitter based on Segmented Mach-Zehnder Modulator in EPIC 250 nm BiCMOS Technology
F. Iseini, M. Inac, A. Malignaggi, A. Peczek, G. Kahmen
Proc. 23rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2023), 51 (2023)
DOI: 10.1109/SiRF56960.2023.10046278, (PEARLS)
(21) HBT Power Detector Utilizing an Ultra-Compact Transformer-based Coupler for 5G BIST
E. Jimenez Tuero, A. Franzese, A. Malignaggi
Proc. IEEE Radio and Wireless Week (RWW 2023), 91 (2023)
DOI: 10.1109/RWS55624.2023.10046321, (100G)
(22) A Four-Channel Bidirectional D-Band Phased-Array Transceiver for 200 Gb/s 6G Wireless Communications in a 130-nm BiCMOS Technology
A. Karakuzulu, W. Ahmad, D. Kissinger, A. Malignaggi
IEEE Journal of Solid-State Circuits 58(5), 1310 (2023)
DOI: 10.1109/JSSC.2022.3232948, (6GKom)
This article demonstrates a fully integrated broadband four-channel phased array transceiver, capable of wireless data rates up to 200 Gb/s covering the entire D -band (110–170 GHz). The circuit is developed in a 130-nm SiGe BiCMOS technology, featuring ft/fmax of 300/500 GHz, and includes localized back-side etching-based ON-chip patch antennas. In both transmit and receive modes, direct up- and down-conversions are performed by in-phase and quadrature mixers driven by a multiplier-by-four local oscillator chain. A bidirectional true time delay circuit, with a resolution of 0.446 ps, which is equivalent to the accuracy of a 4-bit phase shifter, provides the squint-free beam-steering capability. Beam-steering measurements show how the beam can be steered from −45° to 45° in a 7° step. The transceiver achieves a 3-dB baseband bandwidth of 30 and 27 GHz in the transmit and receive modes, respectively. A wireless link demonstration is performed by mounting two chips on printed circuit boards, one in the transmit and one in the receive mode, together with plastic lenses on both sides, at a distance of 15 cm. Hardware-in-the-loop measurements show record data rates of 180 Gb/s with EVM of 12.2% using 16-QAM and 200 Gb/s with 8.3% EVM using 32-QAM. The four-channel transceiver consumes 1.95 and 2.5 W in the receive and transmit modes, respectively, which correspond to power efficiencies of 9.75 pJ/bit in the receiver mode and 12.5 pJ/bit in the transmitter mode.
(23) A Four-Channel Bidirectional D-Band Phased-Array Transceiver for 200 Gb/s 6G Wireless Communications in a 130-nm BiCMOS Technology
A. Karakuzulu, W. Ahmad, D. Kissinger, A. Malignaggi
IEEE Journal of Solid-State Circuits 58(5), 1310 (2023)
DOI: 10.1109/JSSC.2022.3232948, (Taranto)
This article demonstrates a fully integrated broadband four-channel phased array transceiver, capable of wireless data rates up to 200 Gb/s covering the entire D -band (110–170 GHz). The circuit is developed in a 130-nm SiGe BiCMOS technology, featuring ft/fmax of 300/500 GHz, and includes localized back-side etching-based ON-chip patch antennas. In both transmit and receive modes, direct up- and down-conversions are performed by in-phase and quadrature mixers driven by a multiplier-by-four local oscillator chain. A bidirectional true time delay circuit, with a resolution of 0.446 ps, which is equivalent to the accuracy of a 4-bit phase shifter, provides the squint-free beam-steering capability. Beam-steering measurements show how the beam can be steered from −45° to 45° in a 7° step. The transceiver achieves a 3-dB baseband bandwidth of 30 and 27 GHz in the transmit and receive modes, respectively. A wireless link demonstration is performed by mounting two chips on printed circuit boards, one in the transmit and one in the receive mode, together with plastic lenses on both sides, at a distance of 15 cm. Hardware-in-the-loop measurements show record data rates of 180 Gb/s with EVM of 12.2% using 16-QAM and 200 Gb/s with 8.3% EVM using 32-QAM. The four-channel transceiver consumes 1.95 and 2.5 W in the receive and transmit modes, respectively, which correspond to power efficiencies of 9.75 pJ/bit in the receiver mode and 12.5 pJ/bit in the transmitter mode.
(24) A Four-Channel Bidirectional D-Band Phased-Array Transceiver for 200 Gb/s 6G Wireless Communications in a 130-nm BiCMOS Technology
A. Karakuzulu, W. Ahmad, D. Kissinger, A. Malignaggi
IEEE Journal of Solid-State Circuits 58(5), 1310 (2023)
DOI: 10.1109/JSSC.2022.3232948, (Open 6G Hub)
This article demonstrates a fully integrated broadband four-channel phased array transceiver, capable of wireless data rates up to 200 Gb/s covering the entire D -band (110–170 GHz). The circuit is developed in a 130-nm SiGe BiCMOS technology, featuring ft/fmax of 300/500 GHz, and includes localized back-side etching-based ON-chip patch antennas. In both transmit and receive modes, direct up- and down-conversions are performed by in-phase and quadrature mixers driven by a multiplier-by-four local oscillator chain. A bidirectional true time delay circuit, with a resolution of 0.446 ps, which is equivalent to the accuracy of a 4-bit phase shifter, provides the squint-free beam-steering capability. Beam-steering measurements show how the beam can be steered from −45° to 45° in a 7° step. The transceiver achieves a 3-dB baseband bandwidth of 30 and 27 GHz in the transmit and receive modes, respectively. A wireless link demonstration is performed by mounting two chips on printed circuit boards, one in the transmit and one in the receive mode, together with plastic lenses on both sides, at a distance of 15 cm. Hardware-in-the-loop measurements show record data rates of 180 Gb/s with EVM of 12.2% using 16-QAM and 200 Gb/s with 8.3% EVM using 32-QAM. The four-channel transceiver consumes 1.95 and 2.5 W in the receive and transmit modes, respectively, which correspond to power efficiencies of 9.75 pJ/bit in the receiver mode and 12.5 pJ/bit in the transmitter mode.
(25) Ultra-High Data-Rate Wireless Access & Sensing Demonstrators in D-Band
K. KrishneGowda, M. Scheide, C. Herold, M. Appel, L. Lopacinski, A. Malignaggi, C. Carta, E. Grass
Proc. 32nd European Conference on Networks and Communications & 6G Summit (EUCNC 2023), (2023)
(6G-RIC)
(26) Analysis of a Switched Passive Input Network Based on a Surface Acoustic Wave Resonator for 433 MHz Wakeup Receivers
G. Meller, M. Methfessel, J. Wagner, F. Ellinger
Proc. 20th SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC 2023), 148 (2023)
DOI: 10.1109/IMOC57131.2023.10379776, (WakeMeUp)
(27) A Bio-Inspired CMOS Circuit for the Excitation and Inhibition of Neuronal Oscillators
B. Muralidhar, B. Al Beattie, M. Uhlmann, R. Rieger, K. Ochs, G. Kahmen
Proc. 19th IEEE Asia Pacific Conference on Circuits and Systems (APCCAS 2023), (2023)
(Neutronics)
(28) Terahertz Technologies for Non Destructive Testing
D. Nüßler, A. Grimm, W. Heinrich, S. Chartier, G. Fischer, F. Friederich
Proc. 6th International Workshop on Mobile Terahertz Systems (IWMTS 2023), (2023)
DOI: 10.1109/IWMTS58186.2023.10207858, (T-KOS)
(29) First 100 Gb/s Monolithically Integrated Electronic-Photonic Coherent Receiver with Direct Edge Coupling to Standard Single Mode Fiber Array
A. Osman, G. Winzer, Ch. Mai, A. Peczek, K. Voigt, W. Dorward, St. Lischke, M. Inac, A. Malignaggi, L. Zimmermann, I. Sourikopoulos, L. Stampoulidis
Proc. Optical Fiber Communication Conference (OFC 2023), M3I.3 (2023)
DOI: 10.1364/OFC.2023.M3I.3
(30) Gate Driver Chip-Set using Low Volt-Second Pulse Transformer for Galvanic Signal Isolation
B. O&#;Sullivan, Z. Pavlovic, N. Fiebig, C. O&#;Gate, Mathuna, S. O&#;Driscoll
Proc. IEEE Applied Power Electronics Conference (APEC 2023), 294 (2023)
DOI: 10.1109/APEC43580
(31) A Fully Integrated Wideband D-Band Receiver for 6G Applications
G. Panic, C. Herold, A. Karakuzulu
Proc. 31st Telecommunications Forum (TELFOR 2023), (2023)
DOI: 10.1109/TELFOR59449.2023.10372681, (6GKom)
(32) Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing
E. Perez-Bosch Quesada, T. Rizzi, A. Gupta, M.K Mahadevaiah, M.A. Schubert, S. Pechmann, R. Jia, M. Uhlmann, A. Hagelauer, Ch. Wenger, E. Perez
Proc. 14th Spanish Conference on Electron Devices (CDE 2023), (2023)
DOI: 10.1109/CDE58627.2023.10339525, (MIMEC)
(33) Broadband Hetero-Integration of InP Chiplets on SiGe BiCMOS for mm-Wave MMICs up to 325 GHz
M. Rausch, M. Wietstruck, C. Stölmacker, R. Doerner, G. Fischer, A. Thies, S. Knigge, H. Yacoub, W. Heinrich
Proc. IEEE MTT-S International Microwave Symposium (IMS 2023), 466 (2023)
DOI: 10.1109/IMS37964.2023.10188164, (T-KOS)
(34) Breath Analysis of COPD Patients by Terahertz/Millimeter-Wave Gas Spectroscopy - A Proof-of-Principle Study
N. Rothbart, R. Koczulla, O. Holz, K. Schmalz, H.-W. Hübers
Proc. 48th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2023), (2023)
DOI: 10.1109/IRMMW-THz57677.2023.10299123
(35) Monolithically Integrated O-Band Coherent ROSA Featuring 2D Grating Couplers for Self-Homodyne Intra Data Center Links
P.M. Seiler, G. Georgieva, A. Peczek, M. Oberon, Ch. Mai, St. Lischke, A. Malignaggi, L. Zimmermann
IEEE Photonics Journal 15(3), 6601306 (2023)
DOI: 10.1109/JPHOT.2023.3272476
In this work, we present an O-band dual-polarization coherent receiver optical sub-assembly (cROSA), monolithically integrated in a 0.25 μ m BiCMOS technology. The receiver features 248 nm deep ultra violet compatible 2-dimensional grating couplers (2D-GRCs), and an adaptive polarization controller, suitable for mitigation of local oscillator induced power fading in self-homodyne transmission systems. The cROSA is evaluated in system experiments at 64 GBd quadrature-phase shift-keying. Experimental results are related to grating coupler induced polarization crosstalk through Monte-Carlo simulations. Second generation 2D-GRCs are proposed.
(36) High-Speed Optical Transceiver Integrated Chipset and Module for On-Board VCSEL-based Satellite Optical Interconnects
L. Sourikopoulos, G. Winzer, A. Peczek, M. Inac, P. Ostrovskyy, K. Tittelbach-Helmrich, G. Panic, G. Fischer, L. Zimmermann, Y. Franz, S. Jones, P. Kushner, U. Marvet, A. Lujambio, N. Garcia, D. Poudereux, M. Bodega, J. Barbero, L. Stampoulidis
Proc. 14th International Conference on Space Optics (ICSO 2022), 12777, 127774K (2023)
DOI: 10.1117/12.2690846, (SIPhoDiAS)
(37) Vector Modulator Based Leakage Cancellation Technique for CW Radar Transceiver Frontends
B. Sütbas, M.H. Eissa, G. Kahmen
Proc. IEEE Radio and Wireless Symposium (RWS 2023), 88 (2023)
DOI: 10.1109/RWS55624.2023.10046307, (iCampus)
(38) A Ka-Band VCO Chip with Integrated Dividers using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors
B. Sütbas, M.H. Eissa, G. Kahmen
Proc. IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2023), 102 (2023)
DOI: 10.1109/BCICTS54660.2023.10310707, (iCampus II)
(39) A Ka-Band VCO Chip with Integrated Dividers using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors
B. Sütbas, M.H. Eissa, G. Kahmen
Proc. IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2023), 102 (2023)
DOI: 10.1109/BCICTS54660.2023.10310707, (iCampus)
(40) A 27-mW Ka-Band Complex Dielectric Sensor Chip with Readout and Reference Circuits using 1.2-V Supply in 130-nm SiGe BiCMOS
B. Sütbas, M.H. Eissa, G. Fischer, G. Kahmen
IEEE Microwave and Wireless Components Letters 33(6), 923 (2023)
DOI: 10.1109/LMWT.2023.3264515
The capability to sense the dielectric properties of liquids and tissues is valuable in many applications, because accurate assessment of the material composition can be made from the complex permittivity measurements. Laboratory-on-chip systems for continuous dielectric monitoring impose low-voltage and low-power operation on the circuits to enable long-term use without battery replacement. In addition, high level of integration is necessary to facilitate the implementation of 2-D sensor arrays. This letter presents the design and characterization of a SiGe BiCMOS capacitive sensing oscillator-based complex dielectric sensor chip at Ka -band operating with a supply voltage of 1.2 and consuming 27 . The chip is integrated with readout circuits to provide simple dc outputs for easier processing and with reference circuits to serve as a tool to compensate for both the external and internal variations, which affect the sensor output. The experimental results show that different alcohols can be differentiated using the proposed sensor chip.
(41) A 27-mW Ka-Band Complex Dielectric Sensor Chip with Readout and Reference Circuits Using 1.2-V Supply in 130-nm SiGe BiCMOS
B. Sütbas, M.H. Eissa, G. Fischer, G. Kahmen
Proc. IEEE MTT-S International Microwave Symposium (IMS 2023), Th3B-3 (2023)
(42) A Low-Power V-Band Radar Transceiver Front-End Chip using 1.5 V Supply in 130-nm SiGe BiCMOS
B. Sütbas, H.J. Ng, M.H. Eissa, G. Kahmen
IEEE Transactions on Microwave Theory and Techniques 71(11), 4855 (2023)
DOI: 10.1109/TMTT.2023.3269519, (iCampus)
Energy-efficient, low-voltage, and low-power millimeter-wave (mm-wave) radars are gaining increasing attention for battery-powered commercial applications. In this article, the design of a low-power V-band radar sensor based on a transceiver (TRX) front-end chip using 1.5 V supply in an advanced SiGe BiCMOS technology with 300 GHz fT and 500 GHz fmax is presented. The monostatic front-end chip utilizes low-voltage low-power circuit-level design techniques to achieve measured 9-dBm transmitter (TX) output power and 27-dB receiver (RX) gain with a simulated 3.8-dB noise figure (NF) consuming a total of only 72 mW in continuous mode. The TRX chip is used to build a radar sensor, which is experimentally verified in an anechoic chamber. The low-power sensor achieves a 46-dB dynamic range and a ranging precision better than 3.4 µm measured with a static target at 1 m. Phase measurements using the low-power radar in the continuous-wave (CW) mode demonstrate that submillimeter movements can be tracked, and notably main vital parameters of a human can be determined accurately. Experimental results show that the performance of the proposed low-power TRX front-end chip is very competitive with designs in modern CMOS technologies.
(43) A Low-Power V-Band Radar Transceiver Front-End Chip using 1.5 V Supply in 130-nm SiGe BiCMOS
B. Sütbas, H.J. Ng, M.H. Eissa, G. Kahmen
IEEE Transactions on Microwave Theory and Techniques 71(11), 4855 (2023)
DOI: 10.1109/TMTT.2023.3269519, (iCampus II)
Energy-efficient, low-voltage, and low-power millimeter-wave (mm-wave) radars are gaining increasing attention for battery-powered commercial applications. In this article, the design of a low-power V-band radar sensor based on a transceiver (TRX) front-end chip using 1.5 V supply in an advanced SiGe BiCMOS technology with 300 GHz fT and 500 GHz fmax is presented. The monostatic front-end chip utilizes low-voltage low-power circuit-level design techniques to achieve measured 9-dBm transmitter (TX) output power and 27-dB receiver (RX) gain with a simulated 3.8-dB noise figure (NF) consuming a total of only 72 mW in continuous mode. The TRX chip is used to build a radar sensor, which is experimentally verified in an anechoic chamber. The low-power sensor achieves a 46-dB dynamic range and a ranging precision better than 3.4 µm measured with a static target at 1 m. Phase measurements using the low-power radar in the continuous-wave (CW) mode demonstrate that submillimeter movements can be tracked, and notably main vital parameters of a human can be determined accurately. Experimental results show that the performance of the proposed low-power TRX front-end chip is very competitive with designs in modern CMOS technologies.
(44) One-Transistor-Multiple-RRAM Cells for Energy-Efficient In-Memory Computing
M. Uhlmann, E. Perez-Bosch Quesada, M. Fritscher, E. Perez, M.A. Schubert, M. Reichenbach, P. Ostrovskyy, Ch. Wenger, G. Kahmen
Proc. 21st IEEE International New Circuits And Systems Conference (NEWCAS 2023), (2023)
DOI: 10.1109/NEWCAS57931.2023.10198073, (Neutronics)
(45) LUT-based RRAM Model for Neural Accelerator Circuit Simulation
M. Uhlmann, T. Rizzi, J. Wen, E. Perez-Bosch Quesada, B. Beattie, K. Ochs, E. Pérez, P. Ostrovskyy, C. Carta, Ch. Wenger, G. Kahmen
Proc. 18th ACM International Symposium on Nanoscale Architectures (NANOARCH 2023), 35 (2023)
DOI: 10.1145/3611315.3633273, (Neutronics)
(46) LUT-based RRAM Model for Neural Accelerator Circuit Simulation
M. Uhlmann, T. Rizzi, J. Wen, E. Perez-Bosch Quesada, B. Beattie, K. Ochs, E. Pérez, P. Ostrovskyy, C. Carta, Ch. Wenger, G. Kahmen
Proc. 18th ACM International Symposium on Nanoscale Architectures (NANOARCH 2023), 35 (2023)
DOI: 10.1145/3611315.3633273, (MIMEC)
(47) COCHISA Approach: European Core-Chip for Space Applications
F. Vargas, C. Corrado, A. Malignaggi, M. Krstic, D. Verploegen, G. Mannocchi, M. Petri, P. Fontana, U. Lewark, R. Follmann, S. Rochette
Proc. 1st ESA/ESTEC Space Microwave Week (2023), (2023)
(COCHISA)
B. Al Beattie, B. Muralidhar, M. Uhlmann, G. Kahmen, R. Rieger, K. Ochs
Proc. 30th IEEE International Conference on Electronics Circuits and Systems (ICECS 2023), (2023)
DOI: 10.1109/ICECS58634.2023.10382939, (Neutronics)
(2) Wave Digital Emulation of an Enhanced Compact Model for RRAM Devices with Multilevel Capability
B. Al Beattie, E. Perez-Bosch Quesada, M. Uhlmann, E. Perez, G. Kahmen, E. Solan, K. Ochs
IEEE Transactions on Nanotechnology 22, 753 (2023)
DOI: 10.1109/TNANO.2023.3328821, (KI-IoT)
The reliable and compact modeling of RRAM devices is crucial for supporting the development of novel technologies including them. The latter includes a wide range of applications, such as in-memory computing in neuromorphic networks or memristive logic. A major advantage of the considered HfO2-based RRAM devices is their CMOS-compatibility, which allows them to already be utilized in present applications. However, one problem with RRAMs is that their fabrication still leads to device variabilities. This makes it challenging to test the functionality of aspiring technologies utilizing them in an experimental fashion.
This work is dedicated to the compact modeling and efficient emulation of 1T-1R RRAM devices. Specifically, we aim to provide an enhanced model, based on the Stanford-PKU model, that can be used on any simulation platform such as SPICE, VERLIOGA, or even standard ODE solvers to simulate multilevel capable RRAM devices. Furthermore, we provide an algorithmic model, based on the wave digital concept, which allows for emulating the considered RRAM device in real-time. Using the latter, we show the hysteresis of our enhanced model to exhibit astounding resemblance with real device measurements.
(3) Wave Digital Emulation of an Enhanced Compact Model for RRAM Devices with Multilevel Capability
B. Al Beattie, E. Perez-Bosch Quesada, M. Uhlmann, E. Perez, G. Kahmen, E. Solan, K. Ochs
IEEE Transactions on Nanotechnology 22, 753 (2023)
DOI: 10.1109/TNANO.2023.3328821, (KI-PRO)
The reliable and compact modeling of RRAM devices is crucial for supporting the development of novel technologies including them. The latter includes a wide range of applications, such as in-memory computing in neuromorphic networks or memristive logic. A major advantage of the considered HfO2-based RRAM devices is their CMOS-compatibility, which allows them to already be utilized in present applications. However, one problem with RRAMs is that their fabrication still leads to device variabilities. This makes it challenging to test the functionality of aspiring technologies utilizing them in an experimental fashion.
This work is dedicated to the compact modeling and efficient emulation of 1T-1R RRAM devices. Specifically, we aim to provide an enhanced model, based on the Stanford-PKU model, that can be used on any simulation platform such as SPICE, VERLIOGA, or even standard ODE solvers to simulate multilevel capable RRAM devices. Furthermore, we provide an algorithmic model, based on the wave digital concept, which allows for emulating the considered RRAM device in real-time. Using the latter, we show the hysteresis of our enhanced model to exhibit astounding resemblance with real device measurements.
(4) Wave Digital Emulation of an Enhanced Compact Model for RRAM Devices with Multilevel Capability
B. Al Beattie, E. Perez-Bosch Quesada, M. Uhlmann, E. Perez, G. Kahmen, E. Solan, K. Ochs
IEEE Transactions on Nanotechnology 22, 753 (2023)
DOI: 10.1109/TNANO.2023.3328821, (MIMEC)
The reliable and compact modeling of RRAM devices is crucial for supporting the development of novel technologies including them. The latter includes a wide range of applications, such as in-memory computing in neuromorphic networks or memristive logic. A major advantage of the considered HfO2-based RRAM devices is their CMOS-compatibility, which allows them to already be utilized in present applications. However, one problem with RRAMs is that their fabrication still leads to device variabilities. This makes it challenging to test the functionality of aspiring technologies utilizing them in an experimental fashion.
This work is dedicated to the compact modeling and efficient emulation of 1T-1R RRAM devices. Specifically, we aim to provide an enhanced model, based on the Stanford-PKU model, that can be used on any simulation platform such as SPICE, VERLIOGA, or even standard ODE solvers to simulate multilevel capable RRAM devices. Furthermore, we provide an algorithmic model, based on the wave digital concept, which allows for emulating the considered RRAM device in real-time. Using the latter, we show the hysteresis of our enhanced model to exhibit astounding resemblance with real device measurements.
(5) Characterization and Optimization of the Heat Dissipation Capability of a Chip-on-Board Package using Finite Element Methods
Z. Cao, M. Stocchi, M. Wietstruck, T. Mausolf, C. Carta, M. Kaynak
IEEE Transactions on Components, Packaging and Manufacturing Technology 13(3), 346 (2023)
DOI: 10.1109/TCPMT.2023.3259199, (Hytech)
The present study endeavors to investigate the thermal dissipation capability of a chip-on-board package by means of a comprehensive experimental and numerical analysis. For this purpose, a BiCMOS chip is designed and fabricated in conjunction with three different printed circuit board (PCB) configurations, including a single-sided board, a thermal via board, and a copper frame board. Transient thermal measurements are carried out on all three packages, and the results are subsequently transformed into cumulative structure functions. Then the finite element models are established for each package configuration, and their validity is confirmed through comparison with the experimental structure functions. The models are then characterized in accordance with the Joint Electron Device Engineering Council (JEDEC) 38-set boundary conditions, followed by a series of optimizations targeted toward the PCB, including the board stack-up and the board sizes. Parametric studies are performed to quantitatively assess the impact of these parameters on the thermal performance. Finally, the present study provides a comprehensive discussion of the optimal application scenarios for each board configuration, with a view to achieving good thermal performance. The findings of this study will contribute to the development of more thermally effective chip-on-board packages for high-performance electronic systems.
(6) Characterization and Optimization of the Heat Dissipation Capability of a Chip-on-Board Package using Finite Element Methods
Z. Cao, M. Stocchi, M. Wietstruck, T. Mausolf, C. Carta, M. Kaynak
IEEE Transactions on Components, Packaging and Manufacturing Technology 13(3), 346 (2023)
DOI: 10.1109/TCPMT.2023.3259199, (FLEXCOM)
The present study endeavors to investigate the thermal dissipation capability of a chip-on-board package by means of a comprehensive experimental and numerical analysis. For this purpose, a BiCMOS chip is designed and fabricated in conjunction with three different printed circuit board (PCB) configurations, including a single-sided board, a thermal via board, and a copper frame board. Transient thermal measurements are carried out on all three packages, and the results are subsequently transformed into cumulative structure functions. Then the finite element models are established for each package configuration, and their validity is confirmed through comparison with the experimental structure functions. The models are then characterized in accordance with the Joint Electron Device Engineering Council (JEDEC) 38-set boundary conditions, followed by a series of optimizations targeted toward the PCB, including the board stack-up and the board sizes. Parametric studies are performed to quantitatively assess the impact of these parameters on the thermal performance. Finally, the present study provides a comprehensive discussion of the optimal application scenarios for each board configuration, with a view to achieving good thermal performance. The findings of this study will contribute to the development of more thermally effective chip-on-board packages for high-performance electronic systems.
(7) D-Band Flip-Chip Packaging with Wafer-Level Cu-Pillar Bumps
Z. Cao, M. Stocchi, Ch. Wipf, J. Lehmann, L. Li, S. Tolunay Wipf, M. Wietstruck, C. Carta, M. Kaynak
Proc. 32th IEEE Conference on Electrical Performance on Electronic Packaging and Systems (EPEPS 2023), (2023)
DOI: 10.1109/EPEPS58208.2023.10314877, (FLEXCOM)
(8) An Advanced Finite Element Model of the Cu Pillar Solder Reflow Assembly
Z. Cao, B. Pekkolay, A. Okur, B. Heusdens, C. Carta, M. Kaynak
Proc. 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2023), (2023)
DOI: 10.1109/EuroSimE56861.2023.10100808, (FLEXCOM)
(9) An Advanced Finite Element Model of the Cu Pillar Solder Reflow Assembly
Z. Cao, B. Pekkolay, A. Okur, B. Heusdens, C. Carta, M. Kaynak
Proc. 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2023), (2023)
DOI: 10.1109/EuroSimE56861.2023.10100808, (SMARTWAVE)
(10) Towards Robust Process Design Kits with a Scalable DevOps Quality Assurance Platform
A. Datsuk, P. Ostrovskyy, F. Vater, C. Wieden
Proc. 31st IFIP/IEEE Conference on Very Large Scale Integration (VLSI-SoC 2023), (2023)
DOI: 10.1109/VLSI-SoC57769.2023.10321846, (Design Kit)
(11) A 200-260-GHz Voltage-Controlled Distributed Attenuator in 130-nm BiCMOS:C Technology
M.H. Eissa, G. Kahmen
IEEE Microwave and Wireless Technology Letters (MWTL) 33(12), 1622 (2023)
DOI: 10.1109/LMWT.2023.3325303, (Open 6G Hub)
This work presents a wideband passive variable voltage-controlled attenuator (VVA) to control signal powers above 200 GHz. The VVA is manufactured in a 130nm BiCMOS technology with fT / fmax = 300 / 500 GHz. The design is based on a distributed T-attenuator architecture. An Inductive based approach is followed rather than a transmission line architecture to reduce silicon-area. A series varistors was also excluded to enhance the minimum insertion loss (IL) at this high frequency. The design methodology followed the goal to achieve a large bandwidth (BW) across different attenuation states while maintaining low minimum IL. The VVA is capable of handling an input power of up to 18 dBm with compression of 0.5 dB. Measurements show a minimum IL of 5.5 dB within a 3-dB BW of 60 GHz from 200 to 260 GHz across a 13 dB of voltage-controlled attenuation range. The core circuit consumes 0.015mm2 of silicon area. With these specifications the VVA suits very well for highlylinear wideband VGAs for sub-THz transmitters.
(12) Image-Rejection Up-/Down-Converter LO Distribution Chain for 5G mm-Wave Phased-Array Systems
A. Franzese, N. Maletic, R. Negra, A. Malignaggi
Proc. IEEE Radio & Wireless Symposium (RWS 2023), 14 (2023)
DOI: 10.1109/RWS55624.2023.10046204, (Taranto)
(13) Wideband and Efficient 256-GHz Subharmonic-Based FMCW Radar Transceiver in 130-nm SiGe BiCMOS Technology
R. Hasan, M.H. Eissa, W.A. Ahmad, H.J. Ng, D. Kissinger
IEEE Transactions on Microwave Theory and Techniques 71(1), 59 (2023)
DOI: 10.1109/TMTT.2022.3207995, (T-KOS)
This article proposes a fully integrated single-channel bistatic frequency-modulated continuous-wave (FMCW) radar transceiver (TRX) that operates at a center frequency of 256 GHz. The main focus of this work is to realize a wideband and efficient radar transceiver that offers high resolution of target detection in the short-range FMCW radar sensing application. The radar transceiver chip is designed and manufactured using 130 nm SiGe BiCMOS technology which offers heterojunction bipolar transistors (HBTs) with fT/fMAX of 300/500 GHz. The transmitter (TX) of the radar transceiver is based on a fundamentally operated multiplier - by - 8 chain architecture that offers a 3 - dB bandwidth of around 65 GHz with a saturated output power of -5.4 dBm. On the other hand, the receiver (RX) is based on a sub-harmonic architecture that provides a conversion gain (CG) of 10.4 dB with an average noise figure (NF) of 23.5 dB. This transceiver is realized with two integrated on-chip folded dipole antennas. The antenna offers high antenna gain and radiation efficiency due to the use of the selective localized backside etching (LBE) technique. This chip consumes 305 mW of power from a 3.3 V supply and occupies a silicon area of 3.3 mm2. The radar range measurement is performed in the anechoic chamber, and it shows the maximum dynamic range of around 32 dB at the 1m range of the target.
(14) A Broadband D-Band Power Detector System in SiGe 130 nm BiCMOS Technology
C. Herold, T. Mausolf, C. Carta, A. Malignaggi
Proc. 26th European Microwave Week (EuMW 2023), 145 (2023)
DOI: 10.23919/EuMIC58042.2023.10288992, (6G-RIC)
(15) Random and Static Phase Errors in a PLL Array for Millimeter-Wave Frequency Generation
F. Herzel, C. Carta, G. Fischer
Proc. 21st IEEE International New Circuits And Systems Conference (NEWCAS 2023), (2023)
DOI: 10.1109/NEWCAS57931.2023.10198063, (AMX IP)
(16) A 128 Gb/s 7-Tap FIR Filter in 130 nm SiGe:C BiCMOS for High-Speed Channel Equalization
M. Inac, A. Peczek, F. Gerfers, A. Malignaggi
IEEE Microwave and Wireless Components Letters 33(2), 169 (2023)
DOI: 10.1109/LMWC.2022.3212277
In this letter, a fully analog differential 7-tap 128 Gb/s finite impulse response (FIR) filter using IHP’s 130 nm SG13G2 SiGe:C BiCMOS process is presented. The design includes microstrip transmission line (TL) delay structures for introducing 3 ps tap delay, which corresponds to a third-bit period at 112 Gb/s. Detailed measurements show that the filter is capable of eye diagram improvements up to 128 Gb/s while consuming 693 mW, demonstrating its suitability for new generation 400 Gb/s communication channels. To the best of the authors’ knowledge, this is the fastest NRZ equalization by a fully analog FIR filter, to be found in the literature.
(17) Tunable and Highly Power Efficient Traveling Wave Amplifier in SiGe BiCMOS for Optical Modulators
M. Inac, F. Korndörfer, F. Gerfers, A. Malignaggi
Proc. Radio Wireless Week (RWW 2023), 58 (2023)
DOI: 10.1109/SiRF56960.2023.10046248
(18) DC-Coupled Ultra Broadband Differential to Single-Ended Active Balun in 130-nm SiGe BiCMOS Technology
F. Iseini, A. Malignaggi, F. Korndörfer, G. Kahmen
IEEE Microwave and Wireless Components Letters 33(3), 307 (2023)
DOI: 10.1109/LMWC.2022.3216347, (100G)
The dc-coupled (DCC) broadband operation is a fundamental requirement in many applications, especially in optical communication systems. However, circuits allowing differential to single-ended conversion in a DCC fashion are very rare to be found in the literature. In this letter, a novel differential to single-ended ultrabroadband DCC balun in a 130-nm SiGe BiCMOS technology featuring ft/fmax of 300/500 GHz is presented. A circuit analysis and a performance comparison between the proposed balun and two other configurations which are commonly used to convert a differential signal to a single-ended one is carried out. The design of the mentioned balun is described focusing on the trade-offs between gain, bandwidth (BW) and linearity. Measurement results show how the presented topology can achieve a low-frequency power gain of −7 dB and a 1 dB BW of 80 GHz, along with a total harmonic distortion (THD) of 7%.
(19) Analysis and Implementation of DC-Coupled Compact and Power Efficient Lumped Driver for Single-Ended Optical Modulators in SiGe 250 nm BiCMOS Technology
F. Iseini, A. Malignaggi, M. Inac, G. Kahmen
Proc. IEEE International Symposium on Circuits and Systems (ISCAS 2023), (2023)
DOI: 10.1109/ISCAS46773.2023.10182091, (100G)
(20) Monolithically Integrated Optoelectronic Transmitter based on Segmented Mach-Zehnder Modulator in EPIC 250 nm BiCMOS Technology
F. Iseini, M. Inac, A. Malignaggi, A. Peczek, G. Kahmen
Proc. 23rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2023), 51 (2023)
DOI: 10.1109/SiRF56960.2023.10046278, (PEARLS)
(21) HBT Power Detector Utilizing an Ultra-Compact Transformer-based Coupler for 5G BIST
E. Jimenez Tuero, A. Franzese, A. Malignaggi
Proc. IEEE Radio and Wireless Week (RWW 2023), 91 (2023)
DOI: 10.1109/RWS55624.2023.10046321, (100G)
(22) A Four-Channel Bidirectional D-Band Phased-Array Transceiver for 200 Gb/s 6G Wireless Communications in a 130-nm BiCMOS Technology
A. Karakuzulu, W. Ahmad, D. Kissinger, A. Malignaggi
IEEE Journal of Solid-State Circuits 58(5), 1310 (2023)
DOI: 10.1109/JSSC.2022.3232948, (6GKom)
This article demonstrates a fully integrated broadband four-channel phased array transceiver, capable of wireless data rates up to 200 Gb/s covering the entire D -band (110–170 GHz). The circuit is developed in a 130-nm SiGe BiCMOS technology, featuring ft/fmax of 300/500 GHz, and includes localized back-side etching-based ON-chip patch antennas. In both transmit and receive modes, direct up- and down-conversions are performed by in-phase and quadrature mixers driven by a multiplier-by-four local oscillator chain. A bidirectional true time delay circuit, with a resolution of 0.446 ps, which is equivalent to the accuracy of a 4-bit phase shifter, provides the squint-free beam-steering capability. Beam-steering measurements show how the beam can be steered from −45° to 45° in a 7° step. The transceiver achieves a 3-dB baseband bandwidth of 30 and 27 GHz in the transmit and receive modes, respectively. A wireless link demonstration is performed by mounting two chips on printed circuit boards, one in the transmit and one in the receive mode, together with plastic lenses on both sides, at a distance of 15 cm. Hardware-in-the-loop measurements show record data rates of 180 Gb/s with EVM of 12.2% using 16-QAM and 200 Gb/s with 8.3% EVM using 32-QAM. The four-channel transceiver consumes 1.95 and 2.5 W in the receive and transmit modes, respectively, which correspond to power efficiencies of 9.75 pJ/bit in the receiver mode and 12.5 pJ/bit in the transmitter mode.
(23) A Four-Channel Bidirectional D-Band Phased-Array Transceiver for 200 Gb/s 6G Wireless Communications in a 130-nm BiCMOS Technology
A. Karakuzulu, W. Ahmad, D. Kissinger, A. Malignaggi
IEEE Journal of Solid-State Circuits 58(5), 1310 (2023)
DOI: 10.1109/JSSC.2022.3232948, (Taranto)
This article demonstrates a fully integrated broadband four-channel phased array transceiver, capable of wireless data rates up to 200 Gb/s covering the entire D -band (110–170 GHz). The circuit is developed in a 130-nm SiGe BiCMOS technology, featuring ft/fmax of 300/500 GHz, and includes localized back-side etching-based ON-chip patch antennas. In both transmit and receive modes, direct up- and down-conversions are performed by in-phase and quadrature mixers driven by a multiplier-by-four local oscillator chain. A bidirectional true time delay circuit, with a resolution of 0.446 ps, which is equivalent to the accuracy of a 4-bit phase shifter, provides the squint-free beam-steering capability. Beam-steering measurements show how the beam can be steered from −45° to 45° in a 7° step. The transceiver achieves a 3-dB baseband bandwidth of 30 and 27 GHz in the transmit and receive modes, respectively. A wireless link demonstration is performed by mounting two chips on printed circuit boards, one in the transmit and one in the receive mode, together with plastic lenses on both sides, at a distance of 15 cm. Hardware-in-the-loop measurements show record data rates of 180 Gb/s with EVM of 12.2% using 16-QAM and 200 Gb/s with 8.3% EVM using 32-QAM. The four-channel transceiver consumes 1.95 and 2.5 W in the receive and transmit modes, respectively, which correspond to power efficiencies of 9.75 pJ/bit in the receiver mode and 12.5 pJ/bit in the transmitter mode.
(24) A Four-Channel Bidirectional D-Band Phased-Array Transceiver for 200 Gb/s 6G Wireless Communications in a 130-nm BiCMOS Technology
A. Karakuzulu, W. Ahmad, D. Kissinger, A. Malignaggi
IEEE Journal of Solid-State Circuits 58(5), 1310 (2023)
DOI: 10.1109/JSSC.2022.3232948, (Open 6G Hub)
This article demonstrates a fully integrated broadband four-channel phased array transceiver, capable of wireless data rates up to 200 Gb/s covering the entire D -band (110–170 GHz). The circuit is developed in a 130-nm SiGe BiCMOS technology, featuring ft/fmax of 300/500 GHz, and includes localized back-side etching-based ON-chip patch antennas. In both transmit and receive modes, direct up- and down-conversions are performed by in-phase and quadrature mixers driven by a multiplier-by-four local oscillator chain. A bidirectional true time delay circuit, with a resolution of 0.446 ps, which is equivalent to the accuracy of a 4-bit phase shifter, provides the squint-free beam-steering capability. Beam-steering measurements show how the beam can be steered from −45° to 45° in a 7° step. The transceiver achieves a 3-dB baseband bandwidth of 30 and 27 GHz in the transmit and receive modes, respectively. A wireless link demonstration is performed by mounting two chips on printed circuit boards, one in the transmit and one in the receive mode, together with plastic lenses on both sides, at a distance of 15 cm. Hardware-in-the-loop measurements show record data rates of 180 Gb/s with EVM of 12.2% using 16-QAM and 200 Gb/s with 8.3% EVM using 32-QAM. The four-channel transceiver consumes 1.95 and 2.5 W in the receive and transmit modes, respectively, which correspond to power efficiencies of 9.75 pJ/bit in the receiver mode and 12.5 pJ/bit in the transmitter mode.
(25) Ultra-High Data-Rate Wireless Access & Sensing Demonstrators in D-Band
K. KrishneGowda, M. Scheide, C. Herold, M. Appel, L. Lopacinski, A. Malignaggi, C. Carta, E. Grass
Proc. 32nd European Conference on Networks and Communications & 6G Summit (EUCNC 2023), (2023)
(6G-RIC)
(26) Analysis of a Switched Passive Input Network Based on a Surface Acoustic Wave Resonator for 433 MHz Wakeup Receivers
G. Meller, M. Methfessel, J. Wagner, F. Ellinger
Proc. 20th SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC 2023), 148 (2023)
DOI: 10.1109/IMOC57131.2023.10379776, (WakeMeUp)
(27) A Bio-Inspired CMOS Circuit for the Excitation and Inhibition of Neuronal Oscillators
B. Muralidhar, B. Al Beattie, M. Uhlmann, R. Rieger, K. Ochs, G. Kahmen
Proc. 19th IEEE Asia Pacific Conference on Circuits and Systems (APCCAS 2023), (2023)
(Neutronics)
(28) Terahertz Technologies for Non Destructive Testing
D. Nüßler, A. Grimm, W. Heinrich, S. Chartier, G. Fischer, F. Friederich
Proc. 6th International Workshop on Mobile Terahertz Systems (IWMTS 2023), (2023)
DOI: 10.1109/IWMTS58186.2023.10207858, (T-KOS)
(29) First 100 Gb/s Monolithically Integrated Electronic-Photonic Coherent Receiver with Direct Edge Coupling to Standard Single Mode Fiber Array
A. Osman, G. Winzer, Ch. Mai, A. Peczek, K. Voigt, W. Dorward, St. Lischke, M. Inac, A. Malignaggi, L. Zimmermann, I. Sourikopoulos, L. Stampoulidis
Proc. Optical Fiber Communication Conference (OFC 2023), M3I.3 (2023)
DOI: 10.1364/OFC.2023.M3I.3
(30) Gate Driver Chip-Set using Low Volt-Second Pulse Transformer for Galvanic Signal Isolation
B. O&#;Sullivan, Z. Pavlovic, N. Fiebig, C. O&#;Gate, Mathuna, S. O&#;Driscoll
Proc. IEEE Applied Power Electronics Conference (APEC 2023), 294 (2023)
DOI: 10.1109/APEC43580
(31) A Fully Integrated Wideband D-Band Receiver for 6G Applications
G. Panic, C. Herold, A. Karakuzulu
Proc. 31st Telecommunications Forum (TELFOR 2023), (2023)
DOI: 10.1109/TELFOR59449.2023.10372681, (6GKom)
(32) Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing
E. Perez-Bosch Quesada, T. Rizzi, A. Gupta, M.K Mahadevaiah, M.A. Schubert, S. Pechmann, R. Jia, M. Uhlmann, A. Hagelauer, Ch. Wenger, E. Perez
Proc. 14th Spanish Conference on Electron Devices (CDE 2023), (2023)
DOI: 10.1109/CDE58627.2023.10339525, (MIMEC)
(33) Broadband Hetero-Integration of InP Chiplets on SiGe BiCMOS for mm-Wave MMICs up to 325 GHz
M. Rausch, M. Wietstruck, C. Stölmacker, R. Doerner, G. Fischer, A. Thies, S. Knigge, H. Yacoub, W. Heinrich
Proc. IEEE MTT-S International Microwave Symposium (IMS 2023), 466 (2023)
DOI: 10.1109/IMS37964.2023.10188164, (T-KOS)
(34) Breath Analysis of COPD Patients by Terahertz/Millimeter-Wave Gas Spectroscopy - A Proof-of-Principle Study
N. Rothbart, R. Koczulla, O. Holz, K. Schmalz, H.-W. Hübers
Proc. 48th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2023), (2023)
DOI: 10.1109/IRMMW-THz57677.2023.10299123
(35) Monolithically Integrated O-Band Coherent ROSA Featuring 2D Grating Couplers for Self-Homodyne Intra Data Center Links
P.M. Seiler, G. Georgieva, A. Peczek, M. Oberon, Ch. Mai, St. Lischke, A. Malignaggi, L. Zimmermann
IEEE Photonics Journal 15(3), 6601306 (2023)
DOI: 10.1109/JPHOT.2023.3272476
In this work, we present an O-band dual-polarization coherent receiver optical sub-assembly (cROSA), monolithically integrated in a 0.25 μ m BiCMOS technology. The receiver features 248 nm deep ultra violet compatible 2-dimensional grating couplers (2D-GRCs), and an adaptive polarization controller, suitable for mitigation of local oscillator induced power fading in self-homodyne transmission systems. The cROSA is evaluated in system experiments at 64 GBd quadrature-phase shift-keying. Experimental results are related to grating coupler induced polarization crosstalk through Monte-Carlo simulations. Second generation 2D-GRCs are proposed.
(36) High-Speed Optical Transceiver Integrated Chipset and Module for On-Board VCSEL-based Satellite Optical Interconnects
L. Sourikopoulos, G. Winzer, A. Peczek, M. Inac, P. Ostrovskyy, K. Tittelbach-Helmrich, G. Panic, G. Fischer, L. Zimmermann, Y. Franz, S. Jones, P. Kushner, U. Marvet, A. Lujambio, N. Garcia, D. Poudereux, M. Bodega, J. Barbero, L. Stampoulidis
Proc. 14th International Conference on Space Optics (ICSO 2022), 12777, 127774K (2023)
DOI: 10.1117/12.2690846, (SIPhoDiAS)
(37) Vector Modulator Based Leakage Cancellation Technique for CW Radar Transceiver Frontends
B. Sütbas, M.H. Eissa, G. Kahmen
Proc. IEEE Radio and Wireless Symposium (RWS 2023), 88 (2023)
DOI: 10.1109/RWS55624.2023.10046307, (iCampus)
(38) A Ka-Band VCO Chip with Integrated Dividers using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors
B. Sütbas, M.H. Eissa, G. Kahmen
Proc. IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2023), 102 (2023)
DOI: 10.1109/BCICTS54660.2023.10310707, (iCampus II)
(39) A Ka-Band VCO Chip with Integrated Dividers using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors
B. Sütbas, M.H. Eissa, G. Kahmen
Proc. IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2023), 102 (2023)
DOI: 10.1109/BCICTS54660.2023.10310707, (iCampus)
(40) A 27-mW Ka-Band Complex Dielectric Sensor Chip with Readout and Reference Circuits using 1.2-V Supply in 130-nm SiGe BiCMOS
B. Sütbas, M.H. Eissa, G. Fischer, G. Kahmen
IEEE Microwave and Wireless Components Letters 33(6), 923 (2023)
DOI: 10.1109/LMWT.2023.3264515
The capability to sense the dielectric properties of liquids and tissues is valuable in many applications, because accurate assessment of the material composition can be made from the complex permittivity measurements. Laboratory-on-chip systems for continuous dielectric monitoring impose low-voltage and low-power operation on the circuits to enable long-term use without battery replacement. In addition, high level of integration is necessary to facilitate the implementation of 2-D sensor arrays. This letter presents the design and characterization of a SiGe BiCMOS capacitive sensing oscillator-based complex dielectric sensor chip at Ka -band operating with a supply voltage of 1.2 and consuming 27 . The chip is integrated with readout circuits to provide simple dc outputs for easier processing and with reference circuits to serve as a tool to compensate for both the external and internal variations, which affect the sensor output. The experimental results show that different alcohols can be differentiated using the proposed sensor chip.
(41) A 27-mW Ka-Band Complex Dielectric Sensor Chip with Readout and Reference Circuits Using 1.2-V Supply in 130-nm SiGe BiCMOS
B. Sütbas, M.H. Eissa, G. Fischer, G. Kahmen
Proc. IEEE MTT-S International Microwave Symposium (IMS 2023), Th3B-3 (2023)
(42) A Low-Power V-Band Radar Transceiver Front-End Chip using 1.5 V Supply in 130-nm SiGe BiCMOS
B. Sütbas, H.J. Ng, M.H. Eissa, G. Kahmen
IEEE Transactions on Microwave Theory and Techniques 71(11), 4855 (2023)
DOI: 10.1109/TMTT.2023.3269519, (iCampus)
Energy-efficient, low-voltage, and low-power millimeter-wave (mm-wave) radars are gaining increasing attention for battery-powered commercial applications. In this article, the design of a low-power V-band radar sensor based on a transceiver (TRX) front-end chip using 1.5 V supply in an advanced SiGe BiCMOS technology with 300 GHz fT and 500 GHz fmax is presented. The monostatic front-end chip utilizes low-voltage low-power circuit-level design techniques to achieve measured 9-dBm transmitter (TX) output power and 27-dB receiver (RX) gain with a simulated 3.8-dB noise figure (NF) consuming a total of only 72 mW in continuous mode. The TRX chip is used to build a radar sensor, which is experimentally verified in an anechoic chamber. The low-power sensor achieves a 46-dB dynamic range and a ranging precision better than 3.4 µm measured with a static target at 1 m. Phase measurements using the low-power radar in the continuous-wave (CW) mode demonstrate that submillimeter movements can be tracked, and notably main vital parameters of a human can be determined accurately. Experimental results show that the performance of the proposed low-power TRX front-end chip is very competitive with designs in modern CMOS technologies.
(43) A Low-Power V-Band Radar Transceiver Front-End Chip using 1.5 V Supply in 130-nm SiGe BiCMOS
B. Sütbas, H.J. Ng, M.H. Eissa, G. Kahmen
IEEE Transactions on Microwave Theory and Techniques 71(11), 4855 (2023)
DOI: 10.1109/TMTT.2023.3269519, (iCampus II)
Energy-efficient, low-voltage, and low-power millimeter-wave (mm-wave) radars are gaining increasing attention for battery-powered commercial applications. In this article, the design of a low-power V-band radar sensor based on a transceiver (TRX) front-end chip using 1.5 V supply in an advanced SiGe BiCMOS technology with 300 GHz fT and 500 GHz fmax is presented. The monostatic front-end chip utilizes low-voltage low-power circuit-level design techniques to achieve measured 9-dBm transmitter (TX) output power and 27-dB receiver (RX) gain with a simulated 3.8-dB noise figure (NF) consuming a total of only 72 mW in continuous mode. The TRX chip is used to build a radar sensor, which is experimentally verified in an anechoic chamber. The low-power sensor achieves a 46-dB dynamic range and a ranging precision better than 3.4 µm measured with a static target at 1 m. Phase measurements using the low-power radar in the continuous-wave (CW) mode demonstrate that submillimeter movements can be tracked, and notably main vital parameters of a human can be determined accurately. Experimental results show that the performance of the proposed low-power TRX front-end chip is very competitive with designs in modern CMOS technologies.
(44) One-Transistor-Multiple-RRAM Cells for Energy-Efficient In-Memory Computing
M. Uhlmann, E. Perez-Bosch Quesada, M. Fritscher, E. Perez, M.A. Schubert, M. Reichenbach, P. Ostrovskyy, Ch. Wenger, G. Kahmen
Proc. 21st IEEE International New Circuits And Systems Conference (NEWCAS 2023), (2023)
DOI: 10.1109/NEWCAS57931.2023.10198073, (Neutronics)
(45) LUT-based RRAM Model for Neural Accelerator Circuit Simulation
M. Uhlmann, T. Rizzi, J. Wen, E. Perez-Bosch Quesada, B. Beattie, K. Ochs, E. Pérez, P. Ostrovskyy, C. Carta, Ch. Wenger, G. Kahmen
Proc. 18th ACM International Symposium on Nanoscale Architectures (NANOARCH 2023), 35 (2023)
DOI: 10.1145/3611315.3633273, (Neutronics)
(46) LUT-based RRAM Model for Neural Accelerator Circuit Simulation
M. Uhlmann, T. Rizzi, J. Wen, E. Perez-Bosch Quesada, B. Beattie, K. Ochs, E. Pérez, P. Ostrovskyy, C. Carta, Ch. Wenger, G. Kahmen
Proc. 18th ACM International Symposium on Nanoscale Architectures (NANOARCH 2023), 35 (2023)
DOI: 10.1145/3611315.3633273, (MIMEC)
(47) COCHISA Approach: European Core-Chip for Space Applications
F. Vargas, C. Corrado, A. Malignaggi, M. Krstic, D. Verploegen, G. Mannocchi, M. Petri, P. Fontana, U. Lewark, R. Follmann, S. Rochette
Proc. 1st ESA/ESTEC Space Microwave Week (2023), (2023)
(COCHISA)
