More-than-Moore

The Joint Lab bundles the expertise of both academic institutions. The focus is on the exploration and development of mm-wave integrated circuits. The main objective is extending the research capabilities by using a complementary research approach and increasing international visibility. Since 2014, more than 45 undergrad and grad students from Sabanci University have had the opportunity to perform their internships at IHP. They have provided significant contributions to the joint research, with contributions to the academic publications during their bachelor studies. Some of the students are continuing their PhD studies at IHP after their successful internship period. The Joint Lab has succeeded in receiving funds from the Turkish Government funding agency, TUBITAK, for cooperation and joint development on RFMEMS technologies. Today, the Joint Lab cooperation is not only based on student exchange, but also on exchange at the senior researcher level. During the summer of 2019, 11 students from Sabanci University have performed their internship at IHP (see Figure). Out of the research they have done during the internship, they have contributed to an academic publication as coauthors.

  • Research >> click here <<

    The main research areas:

    • technology modules development on BiCMOS process for "More-than-Moore" research path
    • micro- and nano-electronic devices
    • micro-electro and nano-electro mechanical systems (MEMS-NEMS)
    • heterogeneous and 3D packaging technologies for RF and mm-wave circuits
    • microfluidic technologies for lab-on-chip bio-sensing applications
    • circuit design for RF, mm-wave and THz applications

    Complementary research approach:

    • IHP: Based on a "More than Moore" research strategy, IHP brings in the advanced BiCMOS technology and the Si fabrication capabilities together with the off-line characterization and mm-wave measurement techniques
    • Sabanci University: Experimental capabilities to add processes/modules in a post-processing approach and mm-wave circuit design techniques, targeting applications in joint projects
  • Projects >> click here <<

    Development of High TCR Multiple Quantum Well (MQW) SiGe Microbolometer Arrays for High Performance Infrared Imaging Systems

    By being used in uncooled systems, microbolometers hold more than a 90% share in the infrared imaging market. Temperature-Coefficient-of-Resistance (TCR), as a measure of performance, is very important for the sensitivity of the microbolometer array. In this project, 5.5%/K TCR value is achieved through the use of 50% Ge concentration together with some special carbon-delta layers and doping profiles. Multiple Quantum Well (MQW) type detector arrays in mono-crystal Silicon Germanium (SiGe) process that are highly sensitive to thermal changes are used. Full custom integrated circuits with array dimensions of 80x60 and 320x240 are designed, fabricated, and verified in the scope of the project. Finally, a flexible imaging module that is compatible with many imaging systems is designed and verified, which enables to generate various supply and bias voltages and control signals. Improving the TCR of SiGe MQW detector performance while keeping the noise low significantly contributed to the state of the art. 4 journal papers and 4 conference proceedings are published in respected journals as part of the project. 1 PhD thesis is also accomplished in the scope of the project. The developed low cost microbolometer technology is intended to be used in civilian night vision systems and will have an economic impact in that respect.

    240 GHz voltage-controlled oscillators due to the variable capacitance performances.

    Design and fabrication of other sub-blocks such as low noise amplifiers, power detectors, and single-pole-double-throw switches are also designed in this project to build a radiometer system. 1 journal paper and 4 conference proceedings are published in respected journals as part of the project. 1 MSc thesis is also accomplished in the scope of the project.

    SiGe BiCMOS Technology Based Monolithic 140 GHz and 240 GHz (THz) Frontend Circuits

    Aim of the project is to develop 140 GHz centered power and Dicke radiometers and 240 GHz voltage control oscillators by using the RFMEMS switches in a 0.13 µm SiGe BiCMOS process. In this project, RFMEMS switches play a crucial role in 140 GHz radiometers due to the low insertion-loss and also play a crucial role in 240 GHz voltage-controlled oscillators due to the variable capacitance performances. Design and fabrication of other sub-blocks such as low noise amplifiers, power detectors, and single-pole-double-throw switches are also designed in this project to build a radiometer system. 1 journal paper and 4 conference proceedings are published in respected journals as part of the project. 1 MSc thesis is also accomplished in the scope of the project.

  • Publications >> click here <<

    1. A 6-mW W-Band LNA in 0.13µm SiGe BiCMOS for Passive Imaging Systems
      B. Gungor, E. Turkmen, M. Yazici, M. Kaynak and Y. Gurbuz,
      2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS), Springfield, MA, USA, 2020. doi: 10.1109/MWSCAS48704.2020.9184517.
    2. A 0.9 mW Compact Power Detector with 30 dB Dynamic Range for Automotive Radar Applications
      H. Kandis, B. Gungor, M. Yazici, M. Kaynak and Y. Gurbuz
      2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS), Springfield, MA, USA, 2020. doi: 10.1109/MWSCAS48704.2020.9184669.
    3. Thermo-Mechanical Modeling and Experimental Validation of an Uncooled Microbolometer
      C. B. Kaynak et al.,
      2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), San Antonio, TX, USA, 2020. doi: 10.1109/SIRF46766.2020.9040193.
    4. A 26-GHz Vector Modulator in 130-nm SiGe BiCMOS Achieving Monotonic 10-b Phase Resolution Without Calibration
      I. Kalyoncu, A. Burak, M. Kaynak and Y. Gurbuz,
      2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Boston, MA, USA, 2019, pp. 75-78.
    5. Front-end Blocks of a W-Band Dicke Radiometer in SiGe BiCMOS Technology
      B. Ustundag et al
      IEEE Transactions on Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2020.2968313. (Early Access)
    6. Mechanical and Thermal Modeling of an Uncooled Microbolometer
      C. B. Kaynak et al.
      2019 European Microwave Conference in Central Europe (EuMCE), Prague, Czech Republic, 2019, pp. 339-342.
    7. Development and Mechanical Modeling of Si1-XGex/Si MQW Based Uncooled Microbolometers in a 130 nm BiCMOS
      C. Baristiran-Kaynak et al.
      2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Orlando, FL, USA, 2019, pp. 1-3.
    8. High Responsivity Power Detectors for W/D-Bands Passive Imaging Systems in 0.13μm SiGe BiCMOS Technology
      B. Ustundag, E. Turkmen, B. Cetindogan, M. Kaynak and Y. Gurbuz
      2018 Asia-Pacific Microwave Conference (APMC), Kyoto, Japan, 2018, pp. 624-626.
    9. Low-Noise Amplifiers for W-Band and D-Band Passive Imaging Systems in SiGe BiCMOS Technology
      B. Ustundag, E. Turkmen, B. Cetindogan, A. Guner, M. Kaynak and Y. Gurbuz
      2018 Asia-Pacific Microwave Conference (APMC), Kyoto, Japan, 2018, pp. 651-653.
    10. A Switchless SiGe BiCMOS Bidirectional Amplifier for Wideband Radar Applications
      C. Çalışkan, M. Yazıcı, M. Kaynak and Y. Gurbuz,
      IEEE Transactions on Circuits and Systems II: Express Briefs. doi: 10.1109/TCSII.2019.2945862
    11. Process Effects on the Noise Performance of SiGe/Si Multi Quantum Well Thermistor
      C. B. Kaynak, Y. Yamamoto, A. Göritz, F. Korndoerfer, M. Stocchi, M. Wietstruck, Y. Gurbuz, and M. Kaynak
      ECS Transactions, vol. 93, no. 1, pp. 105–108, 2019.
    12. Ultra-Low Noise Amplifier for X-Band SiGe BiCMOS Phased Array Applications
      C. Çalışkan, I. Kalyoncu, M. Yazıcı, M. Kaynak and Y. Gurbuz
      IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 66, no. 9, pp. 1507-1511, Sept. 2019.
    13. A Wideband (3–13 GHz) 7-Bit SiGe BiCMOS Step Attenuator with Improved Flatness
      H. Kandis, M. Yazici, Y. Gurbuz and M. Kaynak,
      2018 18th Mediterranean Microwave Symposium (MMS), Istanbul, Turkey, 2018, pp. 139-142.
    14. 0.13μm SiGe BiCMOS W-Band Low-Noise Amplifier for Passive Imaging Systems B. Gungor, E. Turkmen, M. Yazici, M. Kaynak and Y. Gurbuz,
      2018 18th Mediterranean Microwave Symposium (MMS), Istanbul, Turkey, 2018, pp. 206-209
    15. Physical device modeling of Si/Si1-xGex multi-quantum well detector to optimize Ge content for higher thermal sensitivity
      A. Shafique, S. Abbasi, O. Ceylan, M. Kaynak, Y. Gurbuz, and C. Baristiran Kaynak,
      2018 SPIE Defense + Security , Orlando, 2018.
    16. A low-power CMOS readout IC with on-chip column-parallel SAR ADCs for microbolometer applications
      A. Shafique, O. Ceylan, M. Yazici, M. Kaynak and Y. Gurbuz
      2018 SPIE Defense + Security , Orlando, 2018.
    17. A D-band SPDT switch utilizing reverse-saturated SiGe HBTs for dicke-radiometers
      B. Cetindogan, B. Ustundag, E. Turkmen, M. Wietstruck, M. Kaynak and Y. Gurbuz
      2018 11th German Microwave Conference (GeMiC), Freiburg, 2018, pp. 47-50.
    18. A Test Platform for the Noise Characterization of SiGe Microbolometer ROICs
      S. Abbasi, A. Shafique, O. Ceylan, C. B. Kaynak, M. Kaynak and Y. Gurbuz,
      IEEE Sensors Journal, vol. 18, no. 15, pp. 6217-6223, 1 Aug.1, 2018.
    19. A SiGe HBT D-Band LNA With Butterworth Response and Noise Reduction Technique
      E. Turkmen, A. Burak, A. Guner, I. Kalyoncu, M. Kaynak and Y. Gurbuz
      IEEE Microwave and Wireless Components Letters, vol. 28, no. 6, pp. 524-526, June 2018.
    20. High Performance Thermistor Based on Si1−xGex/Si Multi Quantum Wells
      C. Baristiran Kaynak, Y. Yamamoto, A. Göritz, F. Korndörfer, P. Zaumseil, P. Kulse, K. Schulz, M. Wietstruck, A. Shafique, Y. Gurbuz, and M. Kaynak
       IEEE Electron Device Letters, vol. 39, no. 5, pp. 753-756, May 2018.
    21. 240 GHz RF-MEMS switch in a 0.13 μm SiGe BiCMOS Technology
      S. T. Wipf et al.
      2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Miami, FL, 2017, pp. 54-57.icrowave Conference (GeMiC), Freiburg, 2018, pp. 47-50
    22. A 5–13 GHz 6-bit vector-sum phase shifter with +3.5 dBm IP1dB in 0.25-μm SiGe BiCMOS
      B. Cetindogan, B. Ustundag, A. Burak, M. Wietstruck, M. Kaynak and Y. Gurbuz, 2017 IEEE Asia Pacific Microwave Conference (APMC), Kuala Lumpar, 2017, pp. 1111-1114.
    23. A New 5-13 GHz Slow-Wave SPDT Switch With Reverse-Saturated SiGe HBTs
      M. Davulcu, E. Ozeren, M. Kaynak and Y. Gurbuz
      IEEE Microwave and Wireless Components Letters, vol. 27, no. 6, pp. 581-583, June 2017
    24. A low power CMOS readout IC design for bolometer applications
      A. Galioglu, S. Abbasi, A. Shafique, O. Ceylan, M. Yazici, M. Kaynak, E.C. Durmaz, E.G. Arsoy, and Y. Gurbuz,
      Conference on Infrared Technology and Applications XLIII, Anaheim, CA, Apr-2017
    25. A wideband low noise SiGe medium power amplifier for X-Band Phased Array applications
      C. Çalişkan, İ. Kalyoncu, E. Ozeren, M. Kaynak and Y. Gurbuz,
      2016 11th European Microwave Integrated Circuits Conference (EuMIC), London, 2016, pp. 9-12.
    26. 7-Bit SiGe-BiCMOS Step Attenuator for X-Band Phased-Array RADAR Applications
      M. Davulcu, C. Caliskan, I. Kalyoncu, M. Kaynak and Y. Gurbuz,
      IEEE Microwave and Wireless Components Letters, vol. 26, no. 8, pp. 598-600, 2016.
    27. A High Dynamic Range Power Detector at X-Band
      E. Ozeren, I. Kalyoncu, B. Ustundag, B. Cetindogan, H. Kayahan, M. Kaynak and Y. Gurbuz
      IEEE Microwave and Wireless Components Letters, vol. 26, no. 9, pp. 708-710, 2016.
    28. A 6 Bit Vector-Sum Phase Shifter With a Decoder Based Control Circuit for X-Band Phased-Arrays
      B. Cetindogan, E. Ozeren, B. Ustundag, M. Kaynak and Y. Gurbuz,
      IEEE Microwave and Wireless Components Letters, vol. 26, no. 1, pp. 64-66, 2016.
    29. Design of monocrystalline Si/SiGe multi-quantum well microbolometer detector for infrared imaging systems.
      A. Shafique, E. C. Durmaz, B. Cetindogan, M. Yazici, M. Kaynak, C. B. Kaynak, and Y. Gurbuz,
      SPIE (Society of Photo-optical Instrumentation Engineers), Bellingham, WA, USA, Apr-2016.
    30. A wideband high isolation CMOS T/R switch for x-band phased array radar systems.
      E. Ozeren, A. C. Ulku, I. Kalyoncu, C. Caliskan, M. Davulcu, M. Kaynak, and Y. Gurbuz
      IEEE (Institute of Electrical and Electronics Engineers), pp. 67–69, 24-Jan-2016.
    31. X-band high dynamic range flat gain SiGe BiCMOS low noise amplifier
      M. Davulcu, C. Çalışkan, E. Ozeren, Y. Gurbuz and M. Kaynak,
      2015 10th European Microwave Integrated Circuits Conference (EuMIC), Paris, 2015, pp. 242-245.doi: 10.1109/EuMIC.2015.7345114
    32. A 4-Bit SiGe Passive Phase Shifter for X-Band Phased Arrays
      I. Kalyoncu, E. Ozeren, M. Kaynak, Y. Gurbuz
      13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2013), Austin, January 20 - 22, 2013, USA
    33. Building Blocks for an X-Band SiGe BiCMOS T/R Module
      T. Dinc, I. Kalyoncu, M. Kaynak, Y. Gurbuz
      13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2013), Austin, January 20 - 22, 2013, USA
    34. A SiGe Switched LNA for X-Band Phased-Arrays
      Kalyoncu, T. Dinc, M. Kaynak, Y. Gurbuz
      7th European Microwave Integrated Circuits Conference (EuMIC 2012), Amsterdam, October 28 - November 02, 2012, The Netherlands
    35. An X-Band, High Performance, SiGe-HBT Power Amplifier for Phased Arrays
      T. Dinc, I. Kalyoncu, M. Kaynak, Y. Gurbuz
      7th European Microwave Integrated Circuits Conference (EuMIC 2012), Amsterdam, October 28 - November 02, 2012, The Netherlands 
    36. Fully Integrated Low-Power SiGe Power Amplifier for Biomedical Applications
      M. Kaynak, I. Tekin,Y. Gurbuz
      IET Microwaves, Antennas & Propagation 5, 214 (2011) 
    37. Realisation of a Single-Chip, Silicon Germanium:C-based Power Amplifier for Multi-Band Worldwide Interoperability for Microwave Access Applications
      M. Kaynak, I. Tekin, Y. Gurbuz
      IET Microwaves, Antennas & Propagation 4, 2273 (2010) 
    38. A New Lab-on-Chip Transmitter for the Detection of Proteins Using RNA Aptamers
      F. Tasdemir, S. Zihir, E. Ozeren, J.H. Niazi, A. Qureshi, S.S. Kallempudi, M. Kaynak, R. Scholz, Y. Gurbuz
      40th European Microwave Conference, Paris, September 26 - October 01, 2010, France
    39. Characterization of an Embedded RF-MEMS Switch
      M. Kaynak, K.-E. Ehwald, R. Scholz, F. Korndörfer, Ch. Wipf, Y. Sun, B. Tillack, S. Zihir, Y. Gurbuz
      10th Topical Meeting on Silicon Integrated Circuits in RF Systems (SiRF 2010), New Orleans, January 13, 2010, USA 
    40. Compact RF Model for S-Parameter Characteristics of RFMEMS Capacitive Switches
      M. Kaynak, S. Zihir, Y. Gurbuz, B. Tillack
      Mikrosystemtechnik-Kongress 2009, Berlin, October 12 - 14, 2009, Germany
  • Education >> click here <<

    The cooperation strategy between IHP and Sabanci University is planned using 4 main paths:

    The mutual development of grad level course contents and/or new courses with respect to the hot research topics is one of the main strategic paths of the cooperation. To share know-how and the increase the synergy is the second strategic path of the IHP-Sabanci cooperation. This includes both academic and student level short term and long-term exchanges. The achieved scientific excellence in the first two strategy paths are used to perform a breakthrough research and innovation under the third strategic path, “Research and Development”. The ultimate goal of the cooperation between IHP and Sabanci University is bringing the joint academic and scientific experience into the prototyping and commercialization level by close cooperation with industry, both on Turkish and German sides.

Dr.-Ing. Mehmet Kaynak

IHP 
Im Technologiepark 25
15236 Frankfurt (Oder)
Germany

Secretary:
Katja Albani
Phone: +49 335 5625 670
Fax: +49 335 5625 327
Send e-mail »

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