GESTE

The project aims at the development of a new material system for on-chip thermoelectric conversion at temperatures in the range of 0-100 C. The project includes an extensive material characterization activity, which would allow to evaluate the potential of SiGeSn heterostructures as a multifunctional material for opto-thermo-electronic Integration, as well as the fabrication of prototype devices for the demonstration of thermoelectric power generation.

Funding

The project is funded by the German Research Foundation (DFG).

Project Partners

Institute 9 and JARA-Fundamentals of Future Information Technologies (JARA-FIT)
Forschungszentrum Jülich (FZJ)
Department of Experimental Physics and Functional Materials
BTU Cottbus-Senftenberg, Cottbus (BTU)