GESTE

The project aims at the development of a new material system for on-chip thermoelectric conversion at temperatures in the range of 0-100 C. The project includes an extensive material characterization activity, which would allow to evaluate the potential of SiGeSn heterostructures as a multifunctional material for opto-thermo-electronic Integration, as well as the fabrication of prototype devices for the demonstration of thermoelectric power generation.