The focus of the 2D Materials Research group is devoted to the field of graphene and hBN process and technology development. It deals with fundamental investigations of graphene and hBN as well as the integration of graphene based novel modules into the silicon technology environment.
On one hand, it is of utmost importance to understand and control the morphological, crystallographic, chemical properties and growth mechanisms of 2D materials. On the other hand, the developments of graphene devices are also performed in conditions resembling the Si-based IC production environment as closely as possible. Therefore, we are aiming to bridge the gap between current graphene research and state-of-the-art 200 mm CMOS technologies. Successful collaboration between the Materials Research and Technology departments as well as collaborations with national and European partners are established in order to ensure the outcomes of the 2D Materials R&D.
- research and development of 2D Materials under CMOS compatible conditions
- identification and overcoming of the integrative challenges of graphene technology
- design, development and fabrication of graphene based electro-optic modulators
- quantum mechanical modelling of the growth mechanisms of graphene and hBN
- simulations and modeling of device performances
- development of 200 mm CVD processes for high quality graphene and hBN
- control and physics of substrate-graphene interfaces
- feasibility study of hBN/graphene/hBN heterostructures
- advanced in-situ and ex-situ structural and electrical characterizations of 2D materials
- employment of new characterization tools and methods for 2D materials analysis
- investigations of graphene EA modulators and graphene-semiconductor diodes
- developments of new approaches for the fabrication of graphene-based devices
- establishment of 200 mm generic processes of graphene in CMOS pilot line
Towards these above-mentioned activities, IHP has investigated and developed a 200 mm, Si-CMOS compatible graphene synthesis method. The CVD experiments have been performed at the deposition temperatures of 800 – 900 °C using CH4 as a carbon source. On the basis of results of DFT calculations, we attributed the high structural quality of graphene grown by CVD on Ge to the hydrogen-induced reduction of nucleation probability, explained by the appearance of graphene-induced facets on Ge(001) as a kinetic effect caused by surface step pinning at linear graphene nuclei. Different approaches for passivating and contacting graphene in a 200 mm wafer silicon technology environment were developed. Finally, with expertise in Si photonic technologies, researchers at IHP attempt to realize graphene-based electro-optic modulator concepts.