Adaptive Materials

In this research group, we develop functional materials for microelectronics and integrate them into established silicon technologies. We combine fundamental studies of material properties with research on integration, device design, and system applications, providing scalable solutions in the CMOS+X context.

To advance this research, theoretical modeling and advanced experimental techniques at the micro- and nanoscale are used to control material properties and enable their integration into devices.

Research relevance and application areas

Functional materials can improve existing technologies and enable new device concepts. The group focuses on integrating advances into established technology platforms so they can be transferred efficiently to research and society. In this context, our goal is to ensure new technological advances go hand in hand with an adaptive implementation in established technology platforms.

Key application areas of adaptive materials include non-volatile memory, neural networks, edge and in-memory computing, hyperspectral imaging, medical diagnostics, industrial and environmental monitoring, agriculture, e-mobility, aerospace, photonics, and quantum technology.

Main research objectives

• Further development, characterization and modeling of memristive devices for non-volatile memories, as well as their circuits and algorithms for application in neural networks and edge computing
• Development and integration of plasmonic and dielectric near-field sensors in the VIS/IR and THz range for hyperspectral imaging, medical diagnostics, industrial/environmental monitoring and biofunctionalization
• Integration of III-V compound semiconductor materials on the established CMOS-compatible silicon technology platform for electronic and photonic device concepts and systems
• Understanding of technological problems related to defects in materials and devices in microelectronics and photonics

Research areas

Neural Networks

Memristive components provide memory through variable electrical resistance. These components are of particular interest as switchable elements in non-volatile RRAM memories, analog neural circuit technology, and energy-efficient in-memory computing. They could help overcome current limitations in the digital processing of cognitive functions.

Our Neural Networks research focuses on developing Al-based memristive devices for future electronic circuits, with a strong orientation towards biological systems. Using these devices, we design promising AI solutions for complex tasks, such as image, object and scene recognition, and the control of dynamic, nonlinear systems in e-mobility, aerospace, data processing and sensor control.

To understand and ensure the functionality of memristive devices within an intelligent in-memory computing concept under extreme environmental conditions, we investigate how radiation and cryogenic temperatures affect the devices and their system architecture.

Sensors

We develop plasmonic, dielectric and photoacoustic sensor systems for a wide range of applications in everyday life. Under this premise, we investigate biosensors based on plasmon resonance, which is one of the most sensitive methods for detecting changes in the structure of a single biomolecule.

Our first plasmonic sensors have been developed and tested with the BTU Cottbus-Senftenberg to detect diseases of agricultural crops at an early stage.

III/V-on-Si

The continuous scaling and development of purely silicon-based microelectronic devices is gradually reaching its physical limits. Group III-V compound semiconductors have emerged as promising candidates to overcome these limitations due to their superior properties (e.g. in carrier mobility and band gap engineering). This makes III-V semiconductors interesting for use in electronic devices, as well as in active photonic components and in quantum technology.

Our III/V-on-Si research focuses on integrating III-V materials with silicon to enable high-performance, low-cost systems. These systems combine the advantages and functions of III-V materials with mature, mainstream silicon manufacturing technology.

Using our new FMD-funded exploratory process line in our clean room, we research III-V materials, processes and devices for future implementation in CMOS+X-compatible systems.

Projects