Publications 2022

Script list Publications

(1) Determination of optical constants and scattering properties of transparent polymers for use in optoelectronics
J. Bauer, O. Fursenko, F. Heinrich, M. Gutke, E. Kornejew, O. Broedel, B. Dietzel, A. Kaltenbach, M. Burkhardt, M. Edling, P. Steglich, M. Herzog, S. Schrader
Optical Materials Express 12, 204 (2022)
DOI: 10.1364/OME.434715

(2) Ultra-Wideband Frequency Doubler with Differential Outputs in SiGe BiCMOS
C. Bohn, M. Kaynak, T. Zwick, A.C. Ulusoy
Proc. IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2022), (2022)

(3) Photonic and Optomechanical Thermometry
T. Briant, St. Krenek, A. Cupertino, F.Loubar, R. Braive, L. Weituschat, D. Ramos, M.J. Martin, P.A. Postigo, A. Casas, R. Eisermann, D. Schmid, S. Tabandeh, O. Hahtela,, S. Pourjamal, O. Kozlova, St. Kroker, W. Dickmann, L. Zimmermann, G.Winzer, T. Martel, P.G. Steeneken, R.A. Norte, St. Briaudeau
optics 3, 159 (2022)
DOI: https://doi.org/10.3390/opt3020017, (PhotOQant)
Temperature is one of the most relevant physical quantities that affects almost all processes in nature. However, the realization of accurate temperature standards using current temperature references, like the triple point of water, is difficult due to the requirements on material purity and stability of the environment. In addition, in harsh environments, current temperature sensors with electrical readout, like platinum resistors, are difficult to implement, urging the development of optical temperature sensors. In 2018, the European consortium Photoquant, consisting of metrological institutes and academic partners, started investigating new temperature standards for self-calibrated, embedded optomechanical sensor applications, as well as optimised high resolution and high reliability photonic sensors, to measure temperature at the nano and meso-scales and as a possible replacement for the standard platinum resistant thermometers. This article presents an overview of the results obtained with sensor prototypes that exploit photonic and optomechanical techniques for sensing temperatures over a large temperature range (5 K to 300 K). Different concepts are demonstrated, including ring resonators, ladder-like resonators and suspended membrane optomechanical thermometers, highlighting initial performance and challenges, like self-heating that need to be overcome to realize photonic and optomechanical thermometry applications.

(4) Etch Mechanism of an Al2O3 Hard Mask in the Bosch Process
M. Drost, St. Marschmeyer, M. Fraschke, O. Fursenko, F. Bärwolf, I. Costina, M.K. Mahadevaiah, M. Lisker
Micro and Nano Engineering 14, 100102 (2022)
The etching of high aspect ratio structures in silicon via the Bosch process is essential in modern technologies such as microelectromechanical systems (MEMS) and through-silicon vias (TSV) fabrication. The process can be very demanding on the mask selectivity due to long etching times, and it has been shown that an Al2O3 hard mask is very suitable in this regard, as it offers significantly higher selectivity compared to the conventional SiO2 or resist masks. In this work, we employ a combination of Scanning Electron Microscopy (SEM), Spectroscopic Ellipsometry (SE) and X-Ray Photoelectron Spectroscopy (XPS) depth profiling to scrutinize the Al2O3 mask etching mechanism and therefore the origin of the extraordinary high selectivity. We demonstrate that by increasing the passivation step time, a thicker fluorocarbon polymer layer is formed on the Al2O3, and Al2O3 is then removed with a minuscule average etch rate of ~0.01 nm/min. XPS depth profiling reveals that during Deep Reactive Ion Etching (DRIE) using the Bosch process, an AlFx layer is formed between the polymer and Al2O3. As AlFx is non-volatile, it requires sputtering to be removed. If the polymer layer is thick enough to attenuate the incoming ions such that their energy is not sufficient to lead to desorption of AlFx, such as when using a longer passivation time, the mask is not eroded. By investigating the surface after different amounts of DRIE cycles, we also obtained information about the formation rate of AlFx and the changes in the Al2O3 and polymer thicknesses over the course of a DRIE process. These findings further expand the knowledge of DRIE and can help process engineers to tailor the processes accordingly.

(5) Atomic Layer Deposition of the Conductive Delafossite PtCoO2
D. Hagen, J. Yoon, H. Zhang, B. Kalkofen, M. Slinskas, F. Börrnert, H. Han, S. Parkin
Advanced Materials Interfaces 2200013 (2022)

(6) Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
G. Iacobucci, L. Paolozzi, P. Valerio T. Moretti F. Cadoux R. Cardarelli, R.Cardella, S. Debieux, Y. Favre, D. Ferrere, S. Gonzalez-Sevilla, Y. Gurimskaya, R. Kotitsa, C. Magliocca, F. Martinelli, M. Milanesio, M. Munker, M. Nessi, A. Picardi, J. Saidi, H. Rücker, V. Vicente Barreto Pinto, S. Zambito
Journal of Instrumentation 17, 02019 (2022)
(SG13G3)

(7) SiGe BiCMOS as Enabling Technology for Next Generation RF & THz Systems
G. Kahmen
Proc. European Microwave Integrated Circuits Conference (EuMIC 2021), abstr. (2022)

(8) Modulating the Filamentary Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers
M. Kalishettyhalli Mahadevaiah, E. Perez , M. Lisker, M.A. Schubert, E. Perez-Bosch Quesada, C. Wenger, A. Mai
Electronics (MDPI) 11, 1540 (2022)
(Neutronics)

(9) Modulating the Filamentary Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers
M. Kalishettyhalli Mahadevaiah, E. Perez , M. Lisker, M.A. Schubert, E. Perez-Bosch Quesada, C. Wenger, A. Mai
Electronics (MDPI) 11, 1540 (2022)
(FMD)

(10) Modulating the Filamentary Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers
M. Kalishettyhalli Mahadevaiah, E. Perez , M. Lisker, M.A. Schubert, E. Perez-Bosch Quesada, C. Wenger, A. Mai
Electronics (MDPI) 11, 1540 (2022)
(NeuroMem)

(11) Methoden zur defektfreien Zerspanung von Silizium
N. Kroh, J. Borngräber, F. Sammler
Werkstattstechnik 112(1-2), 34 (2022)
DOI: doi.org/10.37544/1436-4980
The material silicon is known as brittle, hard and difficult to
machine. Nevertheless, it also exhibits unique properties that
only appear under high pressure and which can simplify
mechanical machining. By adjusting cutting parameters and
tool paths to these properties, the crystal planes of the silicon
are separated in a ductile/plastic mode instead of fracturing,
which can allow surfaces with extremely high surface quality
to be generated by machining. In the research presented here,
process parameters for ductile machining were anaylsed and
the use of trochoidal milling tested for this application.

(12) 180 GBd Electronic-Plasmonic IC Transmitter
D. Moor, Y. Fedoryshyn, H. Langenhagen, J. Müllrich, R. Schmid, Ch. Uhl, M. Möller, U. Koch, Y. Horst, B.I. Bitachon, W. Heni, B. Baeuerle, M. Destraz, H. Xu, Delwin, L. Elder, L.E. Johnson, P. Bakopoulos, E. Mentovich, L. Zimmermann, J. Leuthold
OFC 2022, M2D.3 (2022)
(plaCMOS)

(13) Influence of Process Parameters on Aluminum to Aluminum Wafer Bonding
S. Schulze, T. Voß, P. Krüger, M. Fraschke, P. Kulse, M. Wietstruck
IEEE Transactions on Components, Packaging and Manufacturing Technology 12(3), 578 (2022)

(14) Surface Plasmon Resonance (SPR) Spectroscopy and Photonic Integrated Circuit (PIC) Biosensors: A Comparative Review
P. Steglich, G. Lecci, A. Mai
Sensors 22, 2901 (2022)

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