SiGeSn-NanoFETs
Objective
The objective of the project is the research of integrated, SiGeSn-based transistor structures and the establishment of a CMOS-integrable SiGeSn component technology platform by optimizing material manufacturing and developing a suitable component process technology.
IHP's Contribution
- preparation of the Ge-Buffer
- characterization of the prepared SiGeSn-components and -structures
Funding
The project is funded by the BMBF.
Project Partners
- RWTH Aachen
- Research Center Jülich
- Helmholtz Center Dresden-Rossendorf
- University of Stuttgart
