The objective of the project is the research of integrated, SiGeSn-based transistor structures and the establishment of a CMOS-integrable SiGeSn component technology platform by optimizing material manufacturing and developing a suitable component process technology.

IHP's Contribution

  • preparation of the Ge-Buffer
  • characterization of the prepared SiGeSn-components and -structures


The project is funded by the BMBF.

Project Partners

  • RWTH Aachen
  • Research Center Jülich
  • Helmholtz Center Dresden-Rossendorf
  • University of Stuttgart

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