MPW Schedule 2026 & 2027 and Price Information 2026
General Technology Description
IHP offers standard 0.13 and 0.25 μm CMOS processes which provide NMOS, PMOS, isolated NMOS and passive components such as poly resistors and MIM capacitors. In addition to the standard CMOS processes different front-end-of-line options are offered. In 0.25 μm CMOS the standard aluminum BEOL backend offers 3 thin metal layers and two TopMetal layers (TopMetal1 - fourth 2 μm thick metal layer, TopMetal2 – fifth 3 μm thick metal layer). The Al-BEOL backend for 0.13 μm process offers 5 thin and 2 thick metal layers (TM1: 2 μm TM2: 3 μm). Together with a high dielectric stack this enables increased performance of the passive RF components.
Technologies with an enhanced copper BEOL option are offered.
Technologies for MPW & Prototyping
SG13S | A high-performance 0.13 µm BiCMOS with npn-HBTs up to fT / fmax= 250/340 GHz, with 3.3 V I/O CMOS and 1.2 V logic CMOS. |
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SG13G2 | A 0.13 µm BiCMOS technology with much higher bipolar performance of fT/fmax = 350/450 GHz. |
SG13CMOS | A RF CMOS technology which includes all features of SG13G2, but no bipolar HBTs |
SG13SCu | FEOL process SG13S together with 8 layer Cu BEOL option from X-FAB containing 4 thin Cu layers, 2 thick 3 µm Cu layers, a thin Al layer with 2 fF/µm MIM capacitor and a 2.8 µm Al top layer. |
SG13G2Cu | FEOL process SG13G2 together with 8 layer Cu BEOL option from X-FAB containing 4 thin Cu layers, 2 thick 3 µm Cu layers, a thin Al layer with 2 fF/µm MIM capacitor and a 2.8 µm Al top layer. |
SG13G3Cu | IHP´s highest performance HBT’s with ft/fmax = 470/650 GHz. The process offers a 8-layer Cu-BEOL from X-FAB containing 4 thin Cu layers, 2 thick 3μm Cu layers, a thin Al layer with 2 fF/μm MIM capacitor and a 2.8 μm Aluminum top layer. This technology offers CMOS devices with 130 nm gate length and 1.2 V core voltage and high voltage CMOS devices with 3.3 V core voltage. |
SG25H7_EPIC | A monolithic photonic BiCMOS technology combining 0.25 µm CMOS, high-performance npn HBTs (fT / fmax = >350/>500 GHz), and full photonic device set for C/O-band. |
SGB25RH | Is a special variant of SGB25V which includes radiation hard IP for space applications. |
INTM4TM2 | Interposer technology which offers 2 thin and 2 thick Al-BEOL layer on a high resistivity substrate. Further is contains a MIM capacitor and a Thin film resistor. |
A cadence-based mixed signal design kit is available. For high frequency designs an analogue Design Kit in ADS can be used. IHP's reusable blocks and IPs for wireless and broadband are offered to support your designs.
The following Modules are available
LBE | The Localized Backside Etching module is offered to remove silicon locally to improve passive properties (available in all Al-BEOL technologies). |
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H7PIC | Includes additional photonic design layers along with BiCMOS BEOL layers on SOI wafers. |
TSV | An additional option in SG13S and SG13G2 technology that provides RF grounding by vias through silicon to improve RF performance. |
MEMRES | A fully CMOS integrated memristive module based on resistive TiN / HfO2-x / TiN switching devices in SG13S technology, along with a Process Design Kit including layout and VerilogA simulation model. |
2.1 MPW Price Information 2026
Non-Commercial Access
For European non-profit and educational institutions, special discounts are offered for research projects via EUROPRACTICE.
2.1.1 Prices for Technologies
Process | Area Price / mm2 |
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SGB25RH | € 3050 |
SG25H7_EPIC | € 9000 |
SG13S | € 6300 |
SG13C | € 4500 |
SG13G2 | € 7300 |
SG13G3 | € 9000 |
SG13SCu | € 6300 |
SG13G2Cu | € 7300 |
SG13G3Cu | € 9000 |
2.1.2 Prices for Modules
Module (Process) | Price |
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LBE (all Al BEOL) | € 5000 per order and technology |
BEOL (only) 0.13 µm (SG13) | € 1300 (per mm2) |
SG25_H7PIC | € 3800 (per mm2) |
TSV (S, G2) | € 12500 per order |
MEMRES (S) | € 2500 per Run + € 600 per mm2 |
INTM4TM2 | € 900 (per mm²) |
2.2 MPW Schedule
There is a minimum area requirement of only 0.8 mm2 for all runs with bold shipment times. For all technologies or modules marked in brackets, minimum area order is required. For details see chapter 2.4. TAPE IN time is given in a column “TAPE IN”, shipment time in corresponding table cells.
Schedule for complete technologies
2026
TAPE IN | SG25 | SG13 | |||||||
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EPIC H7 | CMOS** | S | MEMRES | SCu | G2Cu | G2 | G3 | G3Cu | |
3. Nov 25 | Jul 13th | ||||||||
24. Nov 25 | May 18th* | ||||||||
8. Dez 25 | Sep 21st* | Oct 08th* | Aug 13th* | Jun 29th | Jun 10th | Jul 26th | Jul 09th | ||
16. Mar 26 | Sep 07th | Sep 17th | |||||||
30. Mar 26 | Oct 02nd* | ||||||||
1. Jun 26 | Mar 15th* | Feb 04th* | Dec 16th | ||||||
31. Aug 26 | May 18th* | May 10th* | Mar 05th | Apr 12th | Apr 19th | Mar 04th | |||
6. Oct 26 | Jun 30th** | ||||||||
2. Nov 26 | Jul 05th | ||||||||
16. Nov 26 | May 10th* | ||||||||
7. Dec 26 | Sep 20th* | Jul 02nd* | Aug 12th* | Jun 28th | Jun 16th | Jun 22nd | Jul 08th |
2027
Changes for 2027 schedule are possible till December 1st 2026.
TAPE IN | SG25 | SG13 | |||||||
---|---|---|---|---|---|---|---|---|---|
EPIC H7 | CMOS** | S | MEMRES | SCu | G2Cu | G2 | G3 | G3Cu | |
2. Nov 26 | Jul 05th | ||||||||
16. Nov 26 | May 10th* | ||||||||
7. Dec 26 | Sep 20th* | Jul 02nd* | Aug 12th* | Jun 28th | Jun 16th | Jun 22nd | Jul 08th | ||
15. Mar 27 | Sep 06th | ||||||||
30. Mar 27 | Sep 16th* | ||||||||
31. May 27 | Mar 13th* | Feb 03rd* | Dec 15th | ||||||
30. Aug 27 | May 15th* | May 04th* | Feb 21th | Apr 10th | Apr 18th | Mar 02nd | |||
4. Oct 27 | Jun 25th** | ||||||||
1. Nov 27 | Jul 03th | ||||||||
15. Nov 27 | May 08th* | ||||||||
6. Dec 27 | Sep 18th* | Jun 30th* | Aug 10th* | Jun 26th | Jun 14th | Jun 20th | Jul 06th |
* Runs with lower priority
** Open-Source MPW Runs with special conditions, which you can find here.
Local Backside Etching (LBE) is not offered for runs with Cu-BEOL from X-FAB. For all the other runs LBE is available and shipment will be 21 days later than the standard shipment. TSV and RDL modules is available for SG13S and SG13G2 technologies and for runs with low priority, it leads to a 35 days longer cycle time for TSV module.
2.2.1 BEOL (only)/Interposer/PIC runs
TAPE IN | SG13 BEOL | SG25_PIC_H7 | IntM4TM2 | TSV |
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9. Feb 26 | Aug 20 | |||
13. Apr 26 | Jul 01 | |||
15. Jun 26 | Oct 26 | Dec 02* | ||
24. Aug 26 | Nov 11 |
There might be internal runs, without confirmed schedule. Feel free to ask our customer support for more details if you are interested in joining such runs.
2.3 Information on Minimum Area per MPW Run
There is a minimum area requirement of only 0.8 mm² for selected technologies or module in schedule tables in chapter 2.2 and 2.3. This is valid for all technologies or modules marked with bold shipment times. For all technologies or modules marked with grey italic shipment times in brackets, minimum area order as given in the following table is required. A registration 4 weeks before TAPE out, followed by the confirmation from the foundry, is necessary in this case. By default these additional runs are without priority. A combination of 0.25 μm based runs and 0.13 μm based runs is not possible.
Process | Min Area [mm²] | Min Area1 for Discount |
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SG25H7_EPIC | 10 | - |
SGB25RH | 25 | - |
SG13S | 10 | 10 |
SG13CMOS | - | - |
SG13G2 | 10 | 10 |
SG13G3 | 10 | - |
SG13SCu | 10 | 10 |
SG13G2Cu | 10 | 10 |
SG13G3Cu | 10 | 10 |
SG25_H7PIC | 12 | 12 |
1 Ask for special price if you need more than this area for one MPW run.
Delivery
As default 40 diced samples will be delivered. Exceptions are designs using TSV module and SG25_H7PIC. Here 25 samples will be delivered by default. The delivery includes E-test data and RF measurements.
Back lapping options:
- 200 µm (no additional fee)
- 300 µm (no additional fee)
- 250 µm (additional fee)
- 150 µm (additional fee)
- 100 µm (additional fee)
- 75 µm (for TSV module only)
Research Engineering Runs
IHP is offering complete mask sets only for research purpose and prototyping. If customer specific modules are added to a qualified technology, this technology is considered as non-qualified with status “early access”. Prices for Research Engineering Runs can be given upon request.
IHP's General Terms and Conditions »
For further information please contact:
Dr. René Scholz
IHP GmbH
Im Technologiepark 25
15236 Frankfurt (Oder)
Germany
Phone: +49 335 5625 647
Fax: +49 335 5625 327
Send e-mail »