Ad­vanced Char­ac­ter­i­za­tion & di­ag­nos­tics

Ad­vanced equip­ment for DC and RF char­ac­ter­i­za­tion of in­di­vid­ual com­po­nents up to func­tional mea­sure­ment of com­plex ASICs is sup­ported within this com­pe­tence area. This in­cludes, for ex­am­ple, the mea­sure­ment of scat­ter­ing pa­ra­me­ters (S-​parameters) up to 110 GHz on state-​of-the-art RF tran­sis­tors. Fur­ther­more, electro-​optical as well as purely op­ti­cal mea­sure­ments of pho­tonic pas­sive and ac­tive RF de­vices on wafer level are in­ves­ti­gated. These ca­pa­bil­i­ties are com­ple­mented by a broad port­fo­lio of equip­ment for ma­te­r­ial analy­sis and di­ag­nos­tics of de­vices and semi­con­duc­tors as well as for spe­cific cir­cuit ma­nip­u­la­tion.