IHP offers research partners and customers access to its powerful SiGe:C BiCMOS technologies with dedicated integrated RF and silicon photonics modules.
IHP provides a Multi Project Wafer Service with 0.13 and 0.25 μm SiGe BiCMOS technologies on 8” silicon wafers. Integrated SiGe heterobipolar transistors with 500 GHz fmax are qualified for research and product design, devices with up to 700 GHz fmax are under development. A Cadence-based mixed-signal design kit is available. For high frequency designs an analog Design Kit using Keysight ADS can be used.