On 20 February, Prof. Dr. Andrea Hofmann received the Wolfgang Mehr Fellowship Award, which is awarded annually by IHP Leibniz Institute for High Performance Microelectronics. Prof. Hofmann is being honored for her outstanding contributions to the field of semiconductor physics. Her research focuses on transport measurements of semiconductor devices at cryogenic temperatures, exploring phenomena such as spin-orbit interaction, heavy-hole light-hole mixing, proximization of semiconductors with superconductors and the quantum Hall effect. Her innovative work has significantly advanced the understanding of these complex physical processes.
Prof. Dr. Hofmann received her Bachelor's and Master's degrees in Physics from the Eidgenössische Technische Hochschule (ETH) Zürich in 2011 and 2013, respectively. During her studies, she interned at the Paul Scherrer Institute and completed her Master's thesis at the University of California, Santa Barbara. She earned her PhD from ETH Zürich in 2017, receiving the ETH medal and the Swiss Physical Society prize related to metrology for her exceptional work. Following postdoctoral research at the Institute of Science and Technology in Austria, where she secured a Marie Curie Individual Fellowship, she worked as a Risk Modeller at Swiss Reinsurance Company. In 2021, she joined the University of Basel as a tenure-track assistant professor.
“This award recognizes Prof. Dr. Hofmann's dedication to advancing semiconductor-based qubit research and her commitment to academic excellence. Her achievements continue to inspire both her colleagues and students” says Prof. Dr. Gerhard Kahmen, Scientific and Technical Director at IHP.
The Wolfgang Mehr Fellowship Award is dedicated to the former Scientific and Technical Director at IHP Prof. Dr. Wolfgang Mehr and has been awarded since 2016 to outstanding scientiest working in research fields of strategic interest of IHP. The Award is related to a collaboration for fabrication and characterization of superconducting/semiconducting hybrid devices comprising germanium quantum well structures.
