By combining the know-how and resources of the project partners, the aim of the 2D_Hetero project is to explore and develop various ways to fabricate graphene/hBN heterostructures on substrates compatible with Si microelectronics.

Towards these goals, graphene/hBN heterostructures will be grown by two major methods: molecular beam epitaxy and chemical vapor deposition. The process may be improved by specific nucleation-enhanced lateral patterning to be developed in the course of the project. Advanced microscopy and spectroscopy techniques will be applied to provide information on the morphological, crystallographic, chemical and electrical properties of the films. Atomistic calculations by ab initio density functional theory complemented with large scale kinetic Monte Carlo simulations are conducted to understand the growth mechanisms and optimal process conditions.

Within the framework of this project, IHP is having the overall coordination of the project, developing the growth procedures of hBN and graphene, disclosing the growth mechanisms by the DFT calculations as well as realizes the 2D heterostructures


hBN/Graphene 2D Heterostructures: from scalable growth to integration is funded by the DFG within the framework of Flag-era 2019.

Project partners

  • IEMN Institute of Electronics, Microelectronics and Nanotechnology, France
  • University of Namur, Belgium


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