Publications 2019
Script list Publications
(1) Large-Scale Chemical Vapor Deposition of Graphene on Polycrystalline Nickel Films: Effect of Annealing Conditions
F. Akhtar, J. Dabrowski, M. Lisker, P. Zaumseil, S. Schulze, A. Jouvray, P. Caban, A. Mai, Ch. Wenger, M. Lukosius
Thin Solid Films 690, 137565 (2019)
DOI: 10.1016/j.tsf.2019.137565, (Graphen)
In the present study, 8-in. silicon substrates, covered with thin (200 nm) polycrystalline nickel films have been employed for the growth of graphene by chemical vapor deposition. In order to control the uniformity and coverage of the graphene, thin nickel layers were used due to their less deep grain boundary grooves and ability to store less carbon in comparison with thick nickel films (>500 nm). The preferential sites for the growth of multilayer graphene were influenced by the surface pretreatment of the polycrystalline nickel films at 1025 °C under different ambient conditions (hydrogen and vacuum). Significant differences in the surface morphologies were observed for the annealed nickel films. The growth of larger grains up to ~6 μm for the films annealed in hydrogen could be attributed to hydrogen interstitials. On the other hand, grains up to ~3 μm were extracted for the films annealed in vacuum. Graphene was grown after exposing the annealed Ni films to ethylene at 925 °C. The lower range (42–106 cm−1) of full width at half maxima of the 2D band as determined by Raman spectroscopy was obtained for the films annealed in hydrogen as compared to the ones annealed in vacuum (51–128 cm−1), indicating that the thickness uniformity of graphene was strongly influenced by the surface modifications of nickel films.
(2) Use of Silicon Photonics Wavelength Multiplexing Techniques for Fast Parallel Readout in High Energy Physics
G. Alimonti, R. Ammendola, A. Andreazza, D. Badoni, V. Bonaiuto, M. Casalboni, F. De Matteis, A. Mai, G. Paoluzzi, P. Prosposito, A. Salamon, G. Salina, E. Santovetti, F. Sargeni, A. Satta, S. Schrader, P. Steglich
Nuclear Instruments and Methods in Physics Research Section A 936, 601 (2019)
DOI: 10.1016/j.nima.2018.09.088
Optical wavelength multiplexing is a widely used technique in Information and Communication Technology to increase maximum data transmission bandwidth on a single optical fiber. We propose wavelength multiplexing/ demultiplexing using optical Ring Resonators (RR) on a silicon photonics circuit for fast timing highly segmented detectors readout. A cascaded microrings, sharing a common bus waveguide with individual drop waveguides, can be used to encode the readout of an array of detectors on a single optical fiber. The device works using a silicon strip-waveguide coupled to a set of N high Q-factor RR filters driven by a different ASIC (Application-Specific Integrated Circuit) front-end electronics.
(3) Ultrafast Carrier Recombination in Highly N-Doped Ge-on-Si Films
J. Allerbeck, A.J. Herbst, Y. Yamamoto, G. Capellini, M. Virgilio, D. Brida
Applied Physics Letters 114(24), 241104 (2019)
DOI: 10.1063/1.5088012, (Ge Laser)
(4) A Broadband Dual-Polarized Terahertz Direct Detector in a 0.13-μm SiGe HBT Technology
M. Andree, J. Grzyb, R. Jain, B. Heinemann, U.R. Pfeiffer
Proc. IEEE MTT-S International Microwave Symposium (IMS 2019), 500 (2019)
DOI: 10.1109/MWSYM.2019.8700871, (Dotseven)
(5) Design and Implementation of Injection Locked Oscillator Biosensors
M. Babay, C. Dalmay, B. Barelaud, E.C. Durmaz, C. Baristiran Kaynak, M. Kaynak, D. Cordeau, A. Pothier
Proc. 49th European Microwave Week (EuMW 2019), 168 (2019)
DOI: 10.23919/EuMC.2019.8910746, (SUMCASTEC)
(6) Lab-on-a-Chip for Cellular Analysis by Dielectric Spectroscopy Based on Injection Locked Oscillators
M. Babay, C. Dalmay, B. Barelaud, E.C. Dumaz, C. Baristiran Kaynak, M. Kaynak, D. Cordeau, A. Pothier
Proc. 6th PLUridisciplinaire sur les Matériaux, l’Environnement et l’Electronique (PLUMEE 2019), 9 (2019)
(7) Potentialités d’Architectures de Biocapteurs Basées sur des Oscillateurs Hyperfréquences Verrouillés par Injection
M. Babay, C. Dalmay, E.C. Dumaz, C. Baristiran Kaynak, M. Kaynak, D. Cordeau, A. Pothier
Proc. 21st Journées Nationales Micro-Ondes (JNM 2019), (2019)
(SUMCASTEC)
(8) Wafer-Level Packaging of Photonics and Electronics for Terabit-Scale Optical Interconnects
P. Bakopoulos, P. Ossieur, A.J. Trindade, P. Steglich, I. Krestnikov, F. Floris, G. Roelkens, M. Inac, D. Kalavrouziotis, D. Gomez, L. Zimmermann, J. Van Campenhout, E. Mentovich
Proc. 41st PhotonIcs & Electromagnetics Research Symposium (PIERS 2019), 113 (2019)
(9) Dielektrophorese-basiertes Lab-on-Chip-System zur Separation von Mikroalgen
A. Barai, J. Flügge, A. Hutari, P. Neubauer, M. Birkholz
Proc. 8. MikroSystemTechnik Kongress (MST 2019), 651 (2019)
(SepaDiElo)
(10) Dielektrophorese-basiertes Lab-on-Chip-System zur Separation von Mikroalgen
A. Barai, J. Flügge, A. Hutari, P. Neubauer, M. Birkholz
Proc. 8. MikroSystemTechnik Kongress (MST 2019), 651 (2019)
(Bioelectronics)
(11) Microalgae Cell Separation and Concentration in a Microfluidic Channel under the Dielectrophoresis (DEP) Effect
A. Barai, N. Boldt, M. Birkholz
COMSOL Conference 2019, (2019)
(SepaDiElo)
(12) Mechanical and Thermal Modeling of an Uncooled Microbolometer
C. Baristiran Kaynak, A. Göritz, Y. Yamamoto, M. Wietstruck, M. Stocchi, K.E. Unal, M.B. Ozdemir, Y. Ozsoy, Y. Gurbuz, M. Kaynak
Proc. 1st European Microwave Conference in Central Europe (EuMCE 2019), 339 (2019)
(IHP-Sabanci Joint Lab)
(13) Process Effects on the Noise Performance of SiGe/Si Multi Quantum Well Thermistor
C. Baristiran Kaynak, Y. Yamamoto, A. Göritz, F. Korndörfer, M. Stocchi, M. Wietstruck, Y. Gurbuz, M. Kaynak
ECS Transactions 93(1), 105 (2019)
DOI: 10.1149/09301.0105ecst, (IHP-Sabanci Joint Lab)
(14) FEM Modeling on Microbolometer Structures
C. Baristiran Kaynak, A. Göritz, Y. Yamamoto, A. Trusch, M. Stocchi, M. Wietstruck, K.E. Unal, M.B. Ozdemir, Y. Ozsoy, Y. Gurbuz, M. Kaynak
Proc. 8. MikroSystemTechnik Kongress (MST 2019), 658 (2019)
(IHP-Sabanci Joint Lab)
(15) Thickness Effect of SiGe Layers on SiGe/Si Quantum Well Based Thermistor Performance
C. Baristiran Kaynak, Y. Yamamoto, A. Göritz, F. Teply, M. Stocchi, M. Wietstruck, Y. Gurbuz, M. Kaynak
Proc. 51st International Conference on Solid State Devices and Materials (SSDM 2019), PS 9-04 (2019)
(IHP-Sabanci Joint Lab)
(16) Development and Mechanical Modeling of Si1-xGex/Si MQW Based Uncooled Microbolometers in a 130 nm BiCMOS
C. Baristiran Kaynak, A. Göritz, Y. Yamamoto, M. Wietstruck, M. Stocchi, K.E. Unal, M.B. Ozdemir, Y. Ozsoy, Y. Gurbuz, M. Kaynak
Proc. 20th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SIRF 2019), (2019)
DOI: 10.1109/SIRF.2019.8709124, (IHP-Sabanci Joint Lab)
(17) Spectroscopic Reflectometry for Characterization of Through Silicon Via Profile of Bosch Etching Process
J. Bauer, O. Fursenko, St. Marschmeyer, F. Heinrich, F. Villasmunta, C. Villringer, C. Zesch, S. Schrader
Journal of Vacuum Science and Technology B 37(6), 062205 (2019)
DOI: 10.1116/1.5120617
(18) Spectroscopic Reflectometry for Characterization of Through Silicon Via Profile of Bosch Etching Process
J. Bauer, O. Fursenko, St. Marschmeyer, F. Heinrich, F. Villasmunta, C. Villringer, C. Zesch, S. Schrader
Proc. 8th International Conference on Spectroscopic Ellipsometry (ICSE 2019), abstr. book 297 (2019)
(19) Contactless Parametric Characterization of Bandgap Engineering in P-Type FinFETs using Spectral Photon Emission
A. Beyreuther, I. Vogt, N. Herfurth, T. Nakamura, G.G. Fischer, B. Motamedi, C. Boit
Microelectronics Reliability 92, 143 (2019)
DOI: 10.1016/j.microrel.2018.11.008
In the last decade it has become increasingly popular to use germanium enriched silicon in modern field effect transistors (FET) due to the higher intrinsic mobility of both holes and electrons in SiGe as compared to Si. Whether used in the source/drain region (S/D) as compressive stressor, which is an efficient mobility booster on Si channel devices, or as channel material, the SiGe increases channel carrier mobility and thus enhancing device performance. Because the germanium content modifies the effective bandgap energy EG, this material characteristic is an important technology performance parameter. The bandgap energy can be determined in an LED-like operation of electronic devices, requiring forward biased p-n junctions. P-n junctions in FETs are source or drain to body diodes, usually grounded or reversely biased. This investigation applies a bias to the body that can trigger parasitic forward operation of the source/drain to body p-n junction in any FET. Spectral photon emission (SPE) is used here as a non-destructive method to characterize engineered bandgaps in operative transistor devices, while the device remains fully functional.
Before applying the presented technique to a p-type FinFET device, it is put to the proof by verifying the nominal silicon bandgap on an (unstrained) 120nm technology FET. Subsequently the characterization capability for bandgap engineering is then successfully demonstrated on a SiGe:C heterojunction bipolar transistor (HBT). In a final step, the bandgap energy EG of a 14/16nm p-type FinFET was determined to be 0.84eV, which corresponds to a Si0.7Ge0.3 mixture. The presented characterization technique is a contactless fault isolation method that allows for quantitative local investigation of engineered bandgaps in p-type FinFETs.
(20) EOFM Measurements of Lateral and Vertical Bipolar Transistors in Silicon and SiGe:C Technologies
A. Beyreuther, N. Herfurth, E. Amini, T. Nakamura, G.G. Fischer, S. Keil, C. Boit
Proc. 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2019), (2019)
DOI: 10.1109/IPFA47161.2019.8984762
(21) Thin Film and Multilayers
M. Birkholz
International Tables for Crystallography, Volume H: Powder Diffraction, 1st Edition, Editors: C.J. Gilmore, J.A. Kaduk, H. Schenk, Chapter 5.4. Thin Films and Multilayers, Wiley, 581 (2019)
DOI: 10.1107/97809553602060000969
(22) Simulation Study of Released Silicon-on-Insulator Slot Waveguides in a Photonic Integrated Circuit Technology
S. Bondarenko, P. Steglich, S. Schrader, A. Mai
Proc. 41st PhotonIcs & Electromagnetics Research Symposium (PIERS 2019), 1 (2019)
(HOPBIT)
(23) Comparative Study of Nano-Slot Silicon Waveguides Covered by Dye Doped and Undoped Polymer Cladding
S. Bondarenko, C. Villringer, P. Steglich
Applied Sciences 9(1), 89 (2019)
DOI: 10.3390/app9010089, (HOPBIT)
(24) Ultra-Low Noise Amplifier for X-Band SiGe BiCMOS Phased Array Applications
C. Caliskan, I. Kalyoncu, M. Yazici, M. Kaynak, Y. Gurbuz
IEEE Transactions on Circuits and Systems II 66(9), 1507 (2019)
DOI: 10.1109/TCSII.2019.2891133, (IHP-Sabanci Joint Lab)
This brief presents, a low noise amplifier (LNA) with sub-1dB noise figure (NF) at X-Band. Different than generally known noise-and-power match technique, the presented LNA is designed by considering impedance between the base-collector terminals of an HBT in common-emitter configuration. The presented amplifier stage can achieve sub-1 dB NF performance with ∼10 dB gain. The LNA dissipates 19.8 mW of dc power and has 0.77 dB NF while occupying 0.4 mm2. It succeeds 1.5 dBm of input-referred compression point. To the best of authors’ knowledge, the presented work achieves the best NF performance in the literature of any LNA that utilizes SiGe technology.
(25) Finite-Element Modelling of Stress Induced Wafer Warpage for a Full BiCMOS Process
Z. Cao, A. Göritz, M. Wietstruck, S. Tolunay Wipf, A. Trusch, M. Kaynak
Proc. 20th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2019), (2019)
DOI: 10.1109/SIRF.2019.8709125, (Bend-IT)
A finite element method (FEM) wafer scale model considering all the process details, e.g. metal patterning, via etching, etc., is built for a state-of-the-art 0.13-µm SiGe BiCMOS fully processed 8-inch wafer. Associated layer residual stress and wafer warpage are extracted and compared with hand calculation and experimental results. The comparison results show that the wafer warpage predicted by FEM model demonstrates only about 10 µm maximum deviation over an 80 µm-bowed wafer. An accurate stress model for an 8-inch wafer including full BiCMOS process is successfully developed and validated.
(26) Field-Modulated Graphene/Silicon Schottky Diodes Fabricated in a fully CMOS-Compatible Process Line
C.A. Chavarin, J. Dabrowski, G. Luongo, M. Lisker, A. Jouvray, P. Caban, A. Di Bartolomeo, Ch. Wenger, A. Mai, M. Lukosius
Proc. International Conference Nano-M&D “Properties, Fabrication and Applications of Nano-Materials and Nano-Devices” (Nano-M&D 2019), 63 (2019)
(Graphica)
(27) Impact of SiGe HBT Hot-Carrier Degradation on the Broadband Amplifier Output Supply Current
M. Couret, G.G. Fischer, I. Garcia-Lopez, M. De Matos, F. Marc, C. Maneux
Proc. 49th IEEE European Solid-State Device Research Conference (ESSDERC 2019), 154 (2019)
DOI: 10.1109/ICMTS.2019.8730964, (Taranto)
(28) Physical, Small-Signal and Pulsed Thermal Impedance Characterization of Multi-Fingers SiGe HBTs Close to the SOA Edges
M. Couret, G.G. Fischer, S. Fregonese, T. Zimmer, C. Maneux
Proc. 32nd IEEE International Conference on Microelectronic Test Structures (ICMTS 2019), 154 (2019)
DOI: 10.1109/ICMTS.2019.8730964, (Taranto)
(29) Optical Phase Conjugation in a Silicon Waveguide with Lateral p-i-n Diode for Nonlinearity Compensation
F. Da Ros, A. Gajda, E.P. da Silva, A. Peczek, A. Mai, K. Petermann, L. Zimmermann, L.K. Oxenlowe, M. Galili
IEEE Journal of Lightwave Technology 37(2), 323 (2019)
DOI: 10.1109/JLT.2018.2873684, (SOPA ZI 1283/3-1)
In-line optical phase conjugation is a well-known technique to enhance the received signal quality through nonlinearity compensation. Being able to implement the conjugation in cm-scale highly nonlinear devices, which can be integrated on a silicon chip, could potentially lead to several benefits in terms of small footprint and cointegration with linear signal processing functionalities, as well as lower power consumption. Here, we focus on silicon waveguides to implement the optical phase conjugation through four-wave mixing. The challenges in terms of conversion efficiency imposed by the presence of nonlinear loss are tackled by using a lateral p-i-n diode along the waveguide. When the diode is reverse biased, the conversion efficiency can be effectively enhanced by the decrease in free-carrier absorption. Low-penalty conversion can therefore be achieved for wavelength-division multiplexing (WDM) signals and the high quality of the generated idlers is critical in demonstrating a 1-dB Q-factor improvement through optical phase conjugation in a 5-WDM channel 16-QAM transmission system after 644 km of dispersion-compensated transmission.
(30) Automated Extraction of Silicon Dioxide Thermal Conductivity Values Based on Electro-Thermal Simulations
A. Datsuk, F. Korndörfer, M. Kaynak, Z. Cao, K. Dhawan, V. Timoshenkov
Proc. IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus 2019), 1909 (2019)
DOI: 10.1109/eiconrus.2019.8657035, (Design Kit)
Abstract — An approach to extract the silicon dioxide thermal conductivity values is presented. A variety of metal resistor test structures are produced using a 0.25 um SiGe BiCMOS technology. Based on the measured temperature rise values an automated extraction method to optimize the thermal conductivity of silicon dioxide is developed. Electrical and thermal co-simulations were performed for the optimization using the aforementioned test structures. The optimized thermal conductivity values were added to the material stack-up file and embedded in the process design kit. The updated material stack-up file allows designers to perform accurate computation of the metal structures and flip-chips. The maximum deviation of 8% between the electro-thermal simulations and the measurements is achieved.
(31) Nano-Imaging of Biological Cells using High Refractive Index Barium Titanate Glass (BTG) Microspheres on Lab on Chip Platform
R. Dhama, N.M. Karim, C. Palego, C. Baristiran Kaynak, E.C. Durmaz, M. Kaynak, Z. Wang
Proc. Biomedical Applications of Electromagnetic Energy Workshop 2019, (2019)
(SUMCASTEC)
(32) Modular Coherent Photonic-Aided Payload Receiver for Communications Satellites
V.C. Duarte, J.G. Prata, C.F. Ribeiro, R.N. Nogueira, G. Winzer, L. Zimmermann, R. Walker, S. Clements, M. Filipowicz, M. Napierala, T. Nasilowski, J. Crabb, M. Kechagias, L. Stampoulidis, J. Anzalchi, M.V. Drummond
Nature Communications 10, 1984 (2019)
Ubiquitous satellite communications are in a leading position for bridging the digital divide. Fulfilling such a mission will require satellite services on par with fibre services, both in bandwidth and cost. Achieving such a performance requires a new generation of communications payloads powered by large-scale processors, enabling a dynamic allocation of hundreds of beams with a total capacity beyond 1 Tbit s−1. The fact that the scale of the processor is proportional to the wavelength of its signals has made photonics a key technology for its implementation. However, one last challenge hinders the introduction of photonics: while large-scale processors demand a modular implementation, coherency among signals must be preserved using simple methods. Here, we demonstrate a coherent photonic-aided receiver meeting such demands. This work shows that a modular and coherent photonic-aided payload is feasible, making way to an extensive introduction of photonics in next generation communications satellites.
(33) Caution: GALS-Ification as a Means against SCA Attacks
Z. Dyka, I. Kabin, D. Klann, F. Vater, P. Langendörfer
Proc. 17th IEEE East-West Design & Test Symposium (EWDTS 2019), 97 (2019)
DOI: 10.1109/EWDTS.2019.8884465, (Total Resilience)
(34) A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform
F. Eltes, Ch. Mai, D. Caimi, M. Kroh, Y. Popoff, G. Winzer, D. Petousi, St. Lischke, J.E. Ortmann, L. Czornomaz, L. Zimmermann, J. Fompeyrine, S. Abel
IEEE Journal of Lightwave Technology 37(5), 1456 (2019)
DOI: 10.1109/JLT.2019.2893500, (PHRESCO)
To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing stand-alone devices on dedicated silicon substrates, incompatible with the fabrication process in silicon foundries. In this work, we demonstrate monolithic integration of electro-optic modulators based on the Pockels effect in barium titanate (BTO) thin films into the back-end-of-line of a photonic integrated circuit (PIC) platform. Molecular wafer bonding allows fully PIC-compatible integration of BTO-based devices and is, as shown, scalable to 200 mm wafers. The PIC-integrated BTO Mach–Zehnder modulators outperform conventional Si photonic modulators in modulation efficiency, losses, and static tuning power. The devices show excellent VπL (0.2 Vcm) and VπLα (1.3 VdB), work at high speed (25 Gbps), and can be tuned at low-static power consumption (100 nW). Our concept demonstrates the possibility of monolithic integration of Pockels-based electro-optic modulators in advanced silicon photonic platforms.
(35) Diagnostic of Graphene on Ge(100)/Si(100) in a 200 mm Wafer Si Technology Environment by Spectroscopic Ellipsometry/Reflectometry
O. Fursenko, M. Lukosius, J. Bauer, C. Villringer, H. Lux, F. Bärwolf, M. Lisker, A. Mai
Journal of Vacuum Science and Technology B 37(6), 062927 (2019)
DOI: 10.1116/1.5122792
The successful integration of graphene into microelectronic devices depends strongly on the availability of fast and nondestructive characterization methods of graphene deposited on large diameter production wafers. Here we demonstrated a diagnostic of graphene on 200 mm Ge(100)/Si(100) wafer performed by fast and nondestructive metrology method based on combination of spectroscopic ellipsometry and reflectometry (SE/R) realized in wafer optical metrology tool. A robust procedure for unambiguous thickness monitoring of all components of a multilayer film stack, including graphene, interface layer GeOx underneath graphene and surface roughness is developed and applied for process control. We found a relationship between the quality of graphene and the growth of GeOx interface layer beneath graphene. The enhancement oxidation of Ge beneath graphene was registered as a long term process. SE/R measurements were validated and complemented by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Raman spectroscopy and Secondary Ion Mass Spectrometry (SIMS). Our comparative study shows high potential of optical metrology for graphene quality diagnostics deposited on Ge/Si structures due to its great sensitivity, repeatability and flexibility realized in a nondestructive way.
(36) Diagnostic of Graphene on 200 mm Ge(100)/Si(100) Wafers by Spectroscopic Ellipsometry
O. Fursenko, M. Lukosius, J. Bauer, C. Villringer, M. Fraschke, M. Lisker, A. Mai
Proc. 8th International Conference on Spectroscopic Ellipsometry (ICSE 2019), abstr. book 178 (2019)
(37) Focusing 1D Silicon Photonic Grating Coupler in Photonic BiCMOS Technology for the Excitation of the Fundamental TM Mode
G. Georgieva, K. Voigt, L. Zimmermann
Proc. 41st PhotonIcs & Electromagnetics Research Symposium (PIERS 2019), 983 (2019)
DOI: 10.1109/PIERS-Spring46901.2019.9017259
(38) Total Ionizing Dose Effects in 70-GHz Bandwidth Photodiodes in a SiGe Integrated Photonics Platform
P.S. Goley, G.N. Tzintzarov, S. Zeinolabedinzadeh, A. Ildefonso, K. Motoki, R. Jiang, E.X. Zhang, D.M. Fleetwood, L. Zimmermann, M. Kaynak, St. Lischke, Ch. Mai, J.D. Cressler
IEEE Transactions on Nuclear Science 66(1), 125 (2019)
DOI: 10.1109/TNS.2018.2885327
Silicon waveguide (WG) integrated p-i-n germanium photodiodes (PDs) from a monolithic electronic-photonic integrated circuit technology were exposed to ionizing radiation from a 10-keV X-ray source to investigate total ionizing dose effects. Existing work on radiation effects in PDs, which is almost entirely based on normal-incidence PDs (rather than WG-integrated PDs), is reviewed to provide context and a framework for understanding the measurement results. Back-end-of-line considerations suggest the enhancement of the ionizing dose due to high-Z materials near the PD. PD performance was characterized in terms of dark current, S-parameters, dc photocurrent response, and optical-to-electrical conversion frequency response, shortly before and after irradiation. No significant degradation was observed, indicating that these devices may be suitable for applications in harsh radiation environments.
(39) A Lens-Coupled On-Chip Antenna for Dual-Polarization SiGe HBT THz Direct Detector
J. Grzyb, M. Andree, R. Jain, B. Heinemann, U.R. Pfeiffer
IEEE Antennas and Wireless Propagation Letters 18(11), 2404 (2019)
DOI: 10.1109/LAWP.2019.2927300
In this letter, a silicon lens-coupled dual-polarization on-chip ring antenna for THz direct detection in 0.13 μm SiGe heterojunction bipolar transistor (HBT) technology is presented. In particular, various circuit-antenna co-design aspects are addressed, including the detector frequency-dependent driving impedance and responsivity, and the necessity of accommodating multiple dc signal lines in the antenna layout. Due to an adequate circuit/electromagnetic (EM) modeling approach, close-to-optimum detector operation in a near-THz fractional bandwidth with consistent radiation patterns up to 1 THz and state-of-the-art peak optical responsivity of 3.1 A/W around 400-500 GHz among silicon direct detectors could be demonstrated.
(40) The Influence of RF Front-End Imperfections on Performance of a 220-260 GHz Tunable M-QAM Wireless Link in SiGe HBT Technology
J. Grzyb, P. Rodriguez-Vazquez, B. Heinemann, U.R. Pfeiffer
Proc. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019), (2019)
DOI: 10.1109/IRMMW-THz.2019.8873856
(41) Coherent ePIC Receiver for 64 GBaud QPSK in 0.25 μm Photonic BiCMOS Technology
S. Gudyriev, C. Kress, H. Zwickel, J.N. Kemal, St. Lischke, L. Zimmermann, C. Koos, J.C. Scheytt
IEEE Journal of Lightwave Technology 37(1), 103 (2019)
DOI: 10.1109/JLT.2018.2881107
(42) A 125–143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch
J. Heredia, M. Ribó, L. Pradell, S. Tolunay Wipf, A. Göritz, M. Wietstruck, Ch. Wipf, M. Kaynak
IEEE Microwave and Wireless Components Letters 29(5), 339 (2019)
DOI: 10.1109/LMWC.2019.2906595
In this letter, a 125–143-GHz frequencyreconfigurable BiCMOS compact low-noise amplifier (LNA) is presented for the first time. It consists of two cascode stages and was fabricated using a 0.13-μm SiGe:C BiCMOS process, which integrates RF-MEMS switches. A systematic general design procedure to obtain a balanced gain and noise figure in both frequency states is proposed. The LNA size is minimized by using only one RF-MEMS switch to select the frequency band and a multimodal three-line microstrip structure in the input matching network. The measured gain and noise figure are 18.2/16.1 and 7/7.7 dB at 125/143 GHz. The power consumption is 36.8 mW. The measured results are in good agreement with simulations.
(43) Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch
J. Heredia, M. Ribó, L. Pradell, S. Tolunay Wipf, A. Göritz, M. Wietstruck, Ch. Wipf, M. Kaynak
Micromachines 10(10), 00632 (2019)
DOI: 10.3390/mi10100632
A 120–140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 m SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal three-line microstrip structure in the input matching network are used to obtain a LNA chip of miniaturized size. A systematic design procedure is applied to obtain a perfectly balanced gain and noise figure in both frequency states (120 GHz and 140 GHz). The measured gain and noise figure are 14.2/14.2 dB and 8.2/8.2 dB at 120/140 GHz respectively, in very good agreement with circuit/electromagnetic co-simulations. The LNA chip and core areas are 0.197 mm2 and 0.091 mm2, respectively, which supposes an area reduction of 23.4% and 15.2% compared to other LNAs reported in this frequency band. The experimental results validate the design procedure and its analysis.
(44) Spiral Microfluidic Devices for Cell Separation and Sorting in Bioprocesses
N. Herrmann, P. Neubauer, M. Birkholz
Biomicrofluidics 13(6), 061501 (2019)
DOI: 10.1063/1.5124705, (Bioelectronics)
Inertial microfluidic systems have been arousing interest in medical applications due to their simple and cost-efficient use. However, comparably small sample volumes in the microliter and milliliter ranges have so far prevented efficient applications in continuous bioprocesses. Nevertheless, recent studies suggest that these systems are well suited for cell separation in bioprocesses because of their facile adaptability to various reactor sizes and cell types. This review will discuss potential applications of inertial microfluidic cell separation systems in downstream bioprocesses and depict recent advances in inertial microfluidics for bioprocess intensification. This review thereby focusses on spiral microchannels that separate particles at a moderate Reynolds number in a laminar flow (Re < 2300) according to their size by applying lateral hydrodynamic forces. Spiral microchannels have already been shown to be capable of replacing microfilters, extracting dead cells and debris in perfusion processes, and removing contaminant microalgae species. Recent advances in parallelization made it possible to process media on a liter-scale, which might pave the way toward industrial applications.
(45) A 50 ps Resolution Monotlithic Active Pixel Sensor Without Internal Gain in SiGe BiCMOS Technology
G. Iacobucci, R. Cardarelli, S. Debieux, F.A. Di Bello, Y. Favre, D. Hayakawa, M. Kaynak, M. Nessi, L. Paolozzi, H. Rücker, D.M.S. Sultan, P. Valerio
Journal of Instrumentation 14, P1108 (2019)
DOI: 10.1088/1748-0221/14/11/P11008
(46) A 26-GHz Vector Modulator in 130-nm SiGe BiCMOS Achieving Monotonic 10-b Phase Resolution Without Calibration
I. Kalyoncu, A. Burak, M. Kaynak, Y. Gurbuz
Proc. IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2019), 75 (2019)
DOI: 10.1109/RFIC.2019.8701733, (IHP-Sabanci Joint Lab)
(47) A Large-Signal SPICE Model for Depletion-Type Silicon Ring Modulators
M. Kim, M. Shin, M.-H. Kim, B.-M. Yu, Y. Kim, Y. Ban, St. Lischke, Ch. Mai, L. Zimmermann, W.-Y. Choi
Photonics Research 7(9), 948 (2019)
DOI: 10.1364/PRJ.7.000948
(48) Parametric Optimization of Depletion-Type Si Micro-Ring Modulator Performances
Y. Kim, Y. Jo, M. Kim, B.-M. Yu, Ch. Mai, St. Lischke, L. Zimmermann, W.-Y. Choi
Japanese Journal of Applied Physics Pt. 1 58(6), 062006 (2019)
DOI: 10.7567/1347-4065/ab22ce
(49) A 4×25-Gbps Monolithically Integrated Si Photonic WDM Transmitter with Ring Modulators
M. Kim, K. Park, W.-S. Oh, Ch. Mai, St. Lischke, L. Zimmermann, W.-Y. Choi
Proc. IEEE Optical Interconnects Conference (OI 2019), (2019)
DOI: 10.1109/OIC.2019.8714557
(50) A Temperature Controller IC for Maximizing Si Micro-Ring Modulator Optical Modulation Amplitude
M.-H. Kim, L. Zimmermann, W.-Y. Choi
IEEE Journal of Lightwave Technology 37(4), 1200 (2019)
DOI: 10.1109/JLT.2018.2889899, (Photonics)
We present a custom-designed integrated circuit (IC) implemented in 0.25-μm BiCMOS technology that can automatically control the Si micro-ring modulator (MRM) temperature for optimal modulation characteristics. The IC monitors the optical modulation amplitude (OMA) of a Si MRM and provides the optimal heater setting for the maximum OMA. The IC consists of trans-impedance amplifier, power detector, track-and-hold circuit, comparator, digital-to analog converter, and digital controller, all of which are integrated in a single chip. We demonstrate that, with this IC, a Si MRM can provide the maximum OMA for 25-Gb/s operation despite changes in temperature and input optical power.
(51) On the Impact of Strained PECVD Oxide Layers on Oxide Precipitation in Silicon
G. Kissinger, D. Kot, M. Lisker, A. Sattler
ECS Journal of Solid State Science and Technology 8(4), N79 (2019)
DOI: 10.1149/2.0141904jss, (Future Silicon Wafers)
PECVD oxide layers with different layer stress ranging from about 1 MPa to 305 MPa were deposited on silicon wafers with similar concentration of interstitial oxygen. After a thermal treatment consisting of rapid thermal annealing (RTA) and furnace annealing 780 °C 3 h + 1000 °C 16 h in nitrogen the profiles of the oxide precipitate density were investigated. Supersaturations of self-interstitials as function of layer stress were determined by adjusting a modelling results to measured depth profiles of bulk microdefects. The self-interstitial supersaturation generated by RTA at 1250 °C and 1175 °C at the silicon/oxide interface is increasing linearly with increasing layer stress. Values for self-interstitial supersaturation determined on deposited oxide layers after RTA at 1250 °C and 1175 °C are very similar to values published for RTO by Sudo et al. An RTA at 1175°C with a PECVD oxide on top of the wafer is a method to effectively suppress oxygen precipitation in silicon wafers. Nucleation anneals carried out at 650 °C for 4 h and 8 h did not show any effect of PECVD oxide layers on oxide precipitate nucleation.
(52) On the Impact of Strained PECVD Nitride Layers on Oxide Precipitate Nucleation in Silicon
G. Kissinger, D. Kot, I. Costina, M. Lisker
ECS Journal of Solid State Science and Technology 8(9), N125 (2019)
DOI: 10.1149/2.0061909jss, (Future Silicon Wafers)
PECVD nitride layers with different layer stress ranging from about 315 MPa to -1735 MPa were deposited on silicon wafers with similar concentration of interstitial oxygen. After a thermal treatment consisting of nucleation at 650 °C for 4 h or 8 h followed annealing 780 °C 3 h + 1000 °C 16 h in nitrogen, the profiles of the oxide precipitate density were investigated. The binding states of hydrogen in the layers was investigated by FTIR. There is a clear effect of the layer stress on oxide precipitate nucleation. The higher the compressive layer stress is the higher is a BMD peak below the front surface. If the nitride layer is removed after the nucleation anneal the BMD peak below the front surface becomes lower. It is possible to model the BMD peak below the surface by vacancy in-diffusion from the silicon/nitride interface. With increasing duration of the nucleation anneal the vacancy injection from the silicon/nitride interface decreases and with increasing compressive layer stress it increases.
(53) Accurate Graphene-Metal Junction Characterization
M. König, G. Ruhl, A. Gahoi, S. Wittmann, T. Preis, J.-M. Batke, I. Costina, M.C. Lemme
IEEE Journal of the Electron Devices Society 7, 219 (2019)
DOI: 10.1109/JEDS.2019.2891516
A reliable method is proposed for measuring specific contact resistivity (pC) for graphenemetal contacts, which is based on a contact end resistance measurement. We investigate the proposed method with simulations and confirm that the sheet resistance under the metal contact (RSK) plays an important role, as it influences the potential barrier at the graphene-metal junction. Two different complementary metal-oxide-semiconductor-compatible aluminum-based contacts are investigated to demonstrate the importance of the sheet resistance under the metal contact: the difference in R SK arises from the formation of insulating aluminum oxide (Al2O3) and aluminum carbide (Al4C3) interfacial layers, which depends on the graphene pretreatment and process conditions. Auger electron spectroscopy and X-ray photoelectron spectroscopy support electrical data. The method allows direct measurements of contact parameters with one contact pair and enables small test structures. It is further more reliable than the conventional transfer length method when the sheet resistance of the material under the contact is large. The proposed method is thus ideal for geometrically small contacts where it minimizes measurement errors and it can be applied in particular to study emerging devices and materials.
(54) Entwicklung einer Scherkraftmessung zur qualitativen Analyse und Optimierung von Wafer Bonding Prozessen
P. Krüger, M. Wietstruck, G. Kissinger, M. Lisker, A. Krüger, T. Döhler, J. Schäffner, H. Silz, U. Geißler, M. Kaynak
Proc. 8. MikroSystemTechnik Kongress (MST 2019), 722 (2019)
(55) Comparison of Fumed Silica- and Colloidal Silica Slurry for CMP
A. Krüger, M. Lisker
Proc. International Conference on Planarization/CMP Technology (ICPT 2019), 114 (2019)
(56) Polishing of Polysilicon with Highly Diluted Silica Slurry by using SiN Stop Layer
A. Krüger, M. Lisker
Proc. International Conference on Planarization/CMP Technology (ICPT 2019), 116 (2019)
(57) Dual Platform Stepper/Scanner-Based Overlay Evaluation Method
P. Kulse, S. Jätzlau, K. Schulz, M. Wietstruck
Proc. 35th European Mask and Lithography Conference (EMLC 2019), 111770F (2019)
DOI: 10.1117/12.2535629
(58) Simulation and Growth of Graphene for Silicon Microelectronic Applications
G. Lippert, J. Dabrowski, A.P. Becker, M. Lisker, Ch. Wenger, A. Mai, M. Lukosius
Proc. 5th Edition of the European Graphene Forum (EGF 2019), 36 (2019)
(Graphen)
(59) Silicon Nitride Waveguide Coupled 67+ GHz Ge Photodiode for Non-SOI PIC and ePIC Platforms
St. Lischke, D. Knoll, Ch. Mai, A. Hesse, G. Georgieva, A. Peczek, A. Kroh, M. Lisker, D. Schmidt, M. Fraschke, H.H. Richter, A. Krüger, U. Saarow, P. Heinrich, G. Winzer, K. Schulz, P. Kulse, A. Trusch, L. Zimmermann
Proc. 65th IEEE International Electron Devices Meeting (IEDM 2019), 33.2.1 (2019)
(SPEED)
(60) Silicon Nitride Waveguide Coupled 67+ GHz Ge Photodiode for Non-SOI PIC and ePIC Platforms
St. Lischke, D. Knoll, Ch. Mai, A. Hesse, G. Georgieva, A. Peczek, A. Kroh, M. Lisker, D. Schmidt, M. Fraschke, H.H. Richter, A. Krüger, U. Saarow, P. Heinrich, G. Winzer, K. Schulz, P. Kulse, A. Trusch, L. Zimmermann
Proc. 65th IEEE International Electron Devices Meeting (IEDM 2019), 33.2.1 (2019)
(plaCMOS)
(61) Silicon Nitride Waveguide Coupled 67+ GHz Ge Photodiode for Non-SOI PIC and ePIC Platforms
St. Lischke, D. Knoll, Ch. Mai, A. Hesse, G. Georgieva, A. Peczek, A. Kroh, M. Lisker, D. Schmidt, M. Fraschke, H.H. Richter, A. Krüger, U. Saarow, P. Heinrich, G. Winzer, K. Schulz, P. Kulse, A. Trusch, L. Zimmermann
Proc. 65th IEEE International Electron Devices Meeting (IEDM 2019), 33.2.1 (2019)
(PEARLS)
(62) Challenges of Graphene Process Integration in CMOS Technology
M. Lisker, M. Lukosius, R. Lukose, Ch. Wenger, A. Mai
Proc. 236th ECS Meeting (2019)
(GIMMIK)
(63) Challenges of Graphene Process Integration in CMOS Technology
M. Lisker, M. Lukosius, R. Lukose, Ch. Wenger, A. Mai
ECS Transactions 92(4), 201 (2019)
DOI: 10.1149/09204.0201ecst, (GIMMIK)
In this paper we have investigated various steps of graphene device fabrication in a 200 mm wafer Si technology environment. This work has also introduced some of the key process modules which may pave the way to large-scale manufacturing of hybrid graphene-Si components. Although the demonstrated process flow requires further improvements to increase device yield and reduce variability the practical relevance is emphasized by the facts that first the proposed processes and materials enable efficient encapsulation and low-resistance metal-graphene contacts and secondly they are compatible with those used in the large-scale fabrication of Si-based ICs. Among the key factors which are limiting the performance and yield of the graphene are uniformity after transfer, process-related contaminations, and poor adhesion/delamination of graphene during various processing steps. In fact, availability of clean and uniform graphene layers on large diameter wafers (200/300 mm) can be considered as a critical prerequisite to further progress in the process integration of graphene devices in Si technology environment.
(64) Processing and Integration of Graphene in a 200 mm Wafer Si Technology Environment
M. Lisker, M. Lukosius, M. Fraschke, J. Kitzmann, J. Dabrowski, O. Fursenko, P. Kulse, K. Schulz, A. Krüger, J. Drews, S. Schulze, D. Wolansky, A.M. Schubert, J. Katzer, D. Stolarek, I. Costina, A. Wolff, G. Dziallas, F. Coccetti, A. Mai
Microelectronic Engineering 205, 44 (2019)
DOI: 10.1016/j.mee.2018.11.007, (Graphen)
We present insights into processes of cleaning, patterning, encapsulation, and contacting graphene in a 200mm wafer pilot line routinely used for the fabrication of integrated circuits in Si technologies. We demonstrate key process steps and discuss challenges and roadblocks which need to be overcome to enable integration of this material with Si technologies.
(65) Light Effective Hole Mass in Undoped Ge/SiGe Quantum Wells
M. Lodari, A. Tosato, D. Sabbagh, M.A. Schubert, G. Capellini, A. Sammak, M. Veldhorst, G. Scappucci
Physical Review B 100(4), 041304(R) (2019)
DOI: 10.1103/PhysRevB.100.041304
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities (2.0 - 11 x 1011 cm-2) in top-gated field effect transistors by positioning the strained buried Ge channel at different depths of 12 and 44 nm from the surface. From the thermal damping of the amplitude of Shubnikov-de Haas oscillations, we measure a light mass of 0.061me at a density of 2.2 x 1011 cm-2. We confirm the theoretically predicted dependence of increasing mass with density and by extrapolation we find an effective mass of ∼ 0.05me at zero density, the lightest effective mass for a planar platform that demonstrated spin qubits in quantum dots.
(66) Optimized HfO2-based MIM Module Fabrication for Emerging Memory Applications
M.K. Mahadevaiah, M. Lisker, M. Fraschke, St. Marschmeyer, D. Schmidt, Ch. Wenger, E. Perez, A. Mai
Proc. 236th ECS Meeting (2019)
(67) Optimized HfO2-based MIM Module Fabrication for Emerging Memory Applications
M.K. Mahadevaiah, M. Lisker, M. Fraschke, St. Marschmeyer, D. Schmidt, Ch. Wenger, E. Perez, A. Mai
ECS Transactions 92(4), 211 (2019)
DOI: 10.1149/09204.0211ecst
In this work we have investigated the influence of three different fabrication approaches on the electrical behavior of HfO2-based MIM stacks which are most popularly used in RRAM technologies. Two specific MIM layouts are analyzed to verify the electrical performance of the devices. The electrical characterization of the MIM devices are performed on wafer-scale and the characteristics of the devices are compared in terms of leakage currents, breakdown voltages, capacitances and Q-factors. Additionally, the RRAM switching behavior is investigated in terms of forming, reset and set process steps.
(68) Reliability of CMOS Integrated Memristive HfO2 Arrays with Respect to Neuromorphic Computing
M.K. Mahadevaiah, E. Perez, Ch. Wenger, F. Zahari, H. Kohlstedt, A. Grossi, C. Zambelli, P. Olivo, M. Ziegler
Proc. IEEE International Reliability Physics Symposium (IRPS 2019), (2019)
DOI: 10.1109/IRPS.2019.8720552, (NeuroMem)
(69) Photonic Thermal Sensor Integration Towards Electronic-Photonic-IC Technologies
A. Mai, S. Bondarenko, Ch. Mai, P. Steglich
Proc. 49th European Solid-State Device Research Conference (ESSDERC 2019), 254 (2019)
DOI: 10.1109/ESSDERC.2019.8901718, (HOPBIT)
(70) High Performance Electronic Design Education - From Technology Towards High Frequency Chip Sets
A. Mai, P. Scholz, G.G. Fischer, F. Gerfers
Proc. 49th IEEE Frontieres in Education Conference (FIE 2019), (2019)
(MPW)
(71) Adjustment of the BEOL for Back Side Module Integration on Wafer Level in a Silicon Photonic Technology
Ch. Mai, P. Steglich, A. Mai
Proc. 8. MikroSystemTechnik Kongress (MST 2019), 162 (2019)
(HOPBIT)
(72) Electronic-Photonic Wafer-Level Technologies for Fast Prototyping and Application Specific Solutions
A. Mai, P. Steglich, Ch. Mai, St. Simon, R. Scholz
Proc. 41st PhotonIcs & Electromagnetics Research Symposium (PIERS 2019), 123 (2019)
(73) UHF-Dielectrophoresis Crossover Frequency as a New Marker for Discrimination of Glioblastoma Undifferentiated Cells
R. Manczak, S. Saada, T. Provent, C. Dalmay, B. Bessette, G. Begaud, S. Battu, P. Blondy, M.-O. Jauberteau, C. Baristiran Kaynak, M. Kaynak, C. Palego, F. Lallloue, A. Pothier
IEEE Journal of Electromagnetics, RF, and Microwaves in Medicine and Biology 3(3), 191 (2019)
DOI: 10.1109/JERM.2019.2895539, (SUMCASTEC)
This paper introduces the first results of dielectric spectroscopy characterization of glioblastoma cells, measuring their crossover frequencies in the ultra-high-frequency range (above 50 MHz) by dielectrophoresis (DEP) techniques. Experiments were performed on two glioblastoma lines U87-MG and LN18 that were cultured following different conditions, in order to achieve different phenotypic profiles.We demonstrate here that the presented DEP electrokinetic method can be used to discriminate the undifferentiated from the differentiated cells. In this study, microfluidic lab-on-chip systems implemented on bipolarcomplementary oxide semiconductor technology are used allowing single cell handling and analysis. Based on the characterizations of their own intracellular features, both the selected glioblastoma (GBM) cell lines cultured in distinct culture conditions have shown clear differences of DEP crossover frequency signatures compared to the differentiated cells cultured in a normal medium. These results support the concept and validate the efficiency for cell characterization in glioblastoma pathology.
(74) Discrimination Cellulaire par Dielectrophorèse Ultra Haute Fréquence: Etude des Fréquences de Transition de Cellules de Glioblastomes
R. Manczak, S. Saada, T. Provent, C. Dalmay, B. Bessette, G. Begaud, S. Battu, P. Blondy, M.O. Jauberteau, C. Baristiran Kaynak, M. Kaynak, C. Palego, F. Lalloue, A. Pothier
Proc. 21st Journées Nationales Micro-Ondes (JNM 2019), (2019)
(SUMCASTEC)
(75) 64-GBd DP-Bipolar-8ASK Transmission over 120 km SSMF Employing a Monolithically Integrated Driver and MZM in 0.25-µm SiGe BiCMOS Technology
G.R. Mehrpoor, C. Schmidt-Langhorst, B. Wohlfeil, R. Elschner, D. Rafique, R. Emmerich, A. Dochhan, I. Garcia Lopez, P. Rito, D. Petousi, D. Kissinger, L. Zimmermann, C. Schubert, B. Schmauss, M. Eiselt, J.-P. Elbers
Proc. Optical Fiber Communications Conference and Exposition (OFC 2019), Tu2A.5 (2019)
DOI: 10.1364/OFC.2019.Tu2A.5, (SPEED)
We demonstrate 64-GBd signal generation up to bipolar-8-ASK utilizing a single MZM, monolithically integrated with segmented drivers in SiGe. Using polarization multiplexing, 300- Gb/s net data rate transmission over 120 km SSMF is shown.
(76) Multilevel HfO2-Based RRAM Devices for Low-Power Neuromorphic Networks
V. Milo, C. Zambelli, P. Olivo, E. Perez, M.K. Mahadevaiah, O.G. Ossorio, Ch. Wenger, D. Ielmini
APL Materials 7(8), 081120 (2019)
DOI: 10.1063/1.5108650, (NeuroMem)
Training and recognition with neural networks generally require high throughput, high energy efficiency, and scalable circuits to enable artificial intelligence tasks to be operated at the edge, i.e., in battery-powered portable devices and other limited-energy environments. In this scenario, scalable resistive memories have been proposed as artificial synapses thanks to their scalability, reconfigurability, and high-energy efficiency, and thanks to the ability to perform analog computation by physical laws in hardware. In this work, we study the material, device, and architecture aspects of resistive switching memory (RRAM) devices for implementing a 2-layer neural network for pattern recognition. First, various RRAM processes are screened in view of the device window, analog storage, and reliability. Then, synaptic weights are stored with 5-level precision in a 4 kbit array of RRAM devices to classify the Modified National Institute of Standards and Technology (MNIST) dataset. Finally, classification performance of a 2-layer neural network is tested before and after an annealing experiment by using experimental values of conductance stored into the array, and a simulation-based analysis of inference accuracy for arrays of increasing size is presented. Our work supports material-based development of RRAM synapses for novel neural networks with high accuracy and low-power consumption.
(77) Advanced Coherent X-Ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on-Si Electronics and Optoelectronics
G. Niu, S.J. Leake, O. Skibitzki, T. Niermann, J. Carnis, F. Kießling, F. Hatami, E.H. Hussein, M.A. Schubert, P. Zaumseil, G. Capellini, W.T. Masselink, W. Ren, Z.-G. Ye, M. Lehmann, T. Schülli, T. Schroeder, M.-I. Richard
Physical Review Applied 11(6), 064046 (2019)
DOI: 10.1103/PhysRevApplied.11.064046
(78) Operando Diagnostic Detection of Interfacial Oxygen “Breathing” of Resistive Random Access Memory by Bulk-Sensitive Hard X-Ray Photoelectron Spectroscopy
G. Niu, P. Calka, P. Huang, S.U. Sharath, S. Petzold, A. Gloskovskii, K. Fröhlich, Y. Zhao, J. Kang, M.A. Schubert, F. Bärwolf, W. Ren, Z.-G. Ye, E. Perez, Ch. Wenger, L. Alff, T. Schroeder
Materials Research Letters 7(3), 117 (2019)
DOI: 10.1080/21663831.2018.1561535
(79) Characterization of the Demonstrator of the Fast Silicon Monolithic ASIC for the TT-PET Project
L. Paolozzi, Y. Bandi, R. Cardarelli, S. Debieux, Y. Favre, D. Ferrere, D. Forshaw, D. Hayakawa, G. Iacobucci, M. Kaynak, A. Miucci, M. Nessi, E. Ripiccini, H. Rücker, P. Valerio, M. Weber
Journal of Instrumentation 14, P02009 (2019)
DOI: 10.1088/1748-0221/14/02/P02009
(80) Test Beam Measurement of the First Prototype of the Fast Silicon Pixel Monolithic Detector for the TT-PET Project
L. Paolozzi, Y. Bandi, M. Benoit, R. Cardarelli, S. Debieux, D. Forshaw, D. Hayakawa, G. Iacobucci, M. Kaynak, A. Miucci, M. Nessi, O. Ratib, E. Ripiccini, H. Rücker, P. Valerio, M. Weber
Journal of Instrumentation 14(2), P02009 (2019)
DOI: 10.1088/1748-0221/13/04/P04015
The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on state-of-the-art SiGe BiCMOS technology. The first ASIC prototype for the TT-PET was produced and tested in the laboratory and with minimum ionizing particles. The electronics exhibit an equivalent noise charge below 600 e- RMS and a pulse rise time of less than 2 ns, in accordance with the simulations. The pixels with a capacitance of 0:8 pF were measured to have a detection efficiency greater than 99% and, although in the absence of the post-processing, a time resolution of approximately 200 ps.
(81) Characterization of the Interface-Driven 1st Reset Operation in HfO2-based 1T1R RRAM Devices
E. Perez, M.K. Mahadevaiah, C. Zambelli, P. Olivo, Ch. Wenger
Solid State Electronics 159, 51 (2019)
DOI: 10.1016/j.sse.2019.03.054, (NeuroMem)
In this work, the increase on the lament conductivity during the 1st Reset operation, by using the incremental step pulse with verify algorithm, is investigated in HfO2-based 1T1R RRAM devices. A new approach is proposed in order to explain the increase of conductivity by highlighting the crucial roles played by both metal-oxide interfaces. The top metal-oxide interface (HfO2-x/TixOy) plays a role in the forming operation by creating a strong gradient of oxygen vacancies in the hafnium oxide layer. The bottom metal-oxide interface (TixOyNz/HfO2-x) also creates oxygen vacancies, which strengthen the conductive lament tip near to this interface at the beginning of the 1st Reset, leading to the reported conductivity increase. After the 1st Reset operation the conductive lament stabilizes at the bottom interface suppressing this behavior in the subsequent reset operations. By modifying the programming parameters and the temperature, it was con rmed a constant current increase of about 9 μA during the 1st Reset regardless the operation conditions imposed.
(82) Toward Reliable Multi-Level Operation in RRAM Arrays: Improving Post-Algorithm Stability and Assessing Endurance/Data Retention
E. Perez, C. Zambelli, M.K. Mahadevaiah, P. Olivo, Ch. Wenger
IEEE Journal of the Electron Devices Society 7, 740 (2019)
DOI: 10.1109/JEDS.2019.2931769, (NeuroMem)
Achieving a reliable multi-level operation in RRAM arrays is currently a challenging task due to several threats like the post-algorithm instability occurring after the levels placement, the limited endurance, and the poor data retention capabilities at high temperature. In this work we introduced a multi-level variation of the state-of-the-art incremental step pulse with verify algorithm (M-ISPVA) to improve the instability of the LRS levels. This algorithm introduces for the first time the proper combination of current compliance control and program/verify paradigms. The validation of the algorithm for forming and set operations has been performed on 4-kbit RRAM arrays. In addition, we assessed the endurance and the high temperature multi-level retention capabilities after the algorithm application proving a 1k switching cycles stability and a 10 years retention target with temperatures below 100 oC.
(83) Data Retention Investigation in Al:HfO2-based RRAM Arrays by using High-Temperature Accelerated Tests
E. Perez, M.K. Mahadevaiah, C. Zambelli, P. Olivo, Ch. Wenger
Journal of Vacuum Science and Technology B 37(1), 012202 (2019)
(NeuroMem)
In this work the feasibility of using accelerated tests at high temperatures to assess the data retention on RRAM devices was evaluated on Al:HfO2-based 1T1R 4kbit arrays. By annealing the samples at three different temperatures (190, 210, and 230 oC) for 10 h, different distributions of retention failure times were obtained and modelled by using Weibull distributions. Based on the temperature dependency of these distributions, the Arrhenius activation energy of the degradation process was calculated (1.35 eV). In addition, the maximum temperature that guarantee a retention time to failure of 10 years lifetime was extrapolated (120 oC).
(84) 100-Gb/s SiGe Chips für das 6G Mobilfunknetz der Zukunft
U.R. Pfeiffer, P. Rodriguez-Vazquez, J. Grzyb, B. Heinemann
8. MikroSystemTechnik Kongress (MST 2019), 394 (2019)
(85) Filtres SIW en Technologie Silicium pour Applications THz
G. Prigent, A.-L. Franc, M. Wietstruck, M. Kaynak
Proc. 21st Journées Nationales Micro-Ondes (JNM 2019), (2019)
(86) Endoscopic Orientation by Multimodal Data Fusion
S. Pulwer, R. Fiebelkorn, Ch. Zesch, P. Steglich, C. Villringer, F. Villasmunta, E. Gedat, J. Handrich, S. Schrader, R. Vandenhouten
Proc. SPIE MOEMS and Miniaturized Systems XVIII (2019) 10931, 1093114 (2019)
DOI: 10.1117/12.2508470
For the further improved feasibility of endoscopic inspection processes, it is crucial for the user to locate the endoscope inside the machine to be inspected. Therefore we developed a system that provide online information about the position, orientation and viewing direction of the endoscope. This will lead to an automated process that simplifies and optimizes the inspection or manufacturing process. The setup is based on an industrial endoscope with a camera, various MEMS and multimodal data fusion. The software contains algorithms like feature and geometric structure recognition. To minimize the error function and noise, it is necessary to implement mathematical compensation algorithm and make use of Kalman-Filter or Particle-Filter. Based on the calculated results, a visualization of the position and location of the endoscope inside a 3D-CAD model of the inspected machine will be displayed. Test objects (self-defined 3D printed objects, turbine blisk and transmission) were used for tracking the distal end of the endoscope. With these data we could generate a 3D point cloud in real time. Therefore we registered the optical and photometrical characteristics of the system and reconstructed the movement of the endoscope by feature detection and tracking in combination with SLAM (Simultaneous Localization and Mapping). Using the information of the 3D-CAD model of the object and the registered point cloud in combination we were able to improve the stability of the algorithm.
(87) Open-Access Silicon Photonics Platforms in Europe
A. Rahim, J. Goyvaerts, B. Szelag, J.-M. Fedeli, P. Absil, T. Aalto, M. Harjanne, C. Littlejohns, G. Reed, G. Winzer, St. Lischke, L. Zimmermann, D. Knoll, D. Geuzebroek, A. Leinse, M. Geiselmann, M. Zervas, H. Jans, A. Stassen, C. Dominguez, P. Munoz, D. Domenech, A.L. Giesecke, M.C. Lemme, R. Baets
IEEE Journal of Selected Topics in Quantum Electronics 25(5), 8200818 (2019)
DOI: 10.1109/JSTQE.2019.2915949
Offering open-access silicon photonics-based technologies has played a pivotal role in unleashing this technology from research laboratories to industry. Fabless enterprises rely on the open-access of these technologies for their product development. In the last decade, a diverse set of open-access technologies with medium and high technology readiness levels have emerged. This paper provides a review of the open-access silicon and silicon nitride photonic IC technologies offered by the pilot lines of European research institutes and companies. The paper also highlights upcoming features of these platforms and discusses how they address the long-term market needs.
(88) Cryogenic Operation of a Millimeter-Wave SiGe BiCMOS Low-Noise Amplifier
W. Ramirez, H. Forsten, M. Varonen, R. Reeves, M. Kantanen, M. Kaynak, S. Torres
IEEE Microwave and Wireless Components Letters 29(6), 403 (2019)
(89) Optimization and Performance Limits of a 64-QAM Wireless Communication Link at 220-260 GHz in a SiGe HBT Technology
P. Rodriguez-Vazquez, J. Grzyb, B. Heineman, U.R. Pfeiffer
Proc. IEEE Radio and Wireless Symposium (RWS 2019), (2019)
DOI: 10.1109/RWS.2019.8714283
(90) A 16-QAM 100-Gb/s 1-M Wireless Link With an EVM of 17% at 230 GHz in an SiGe Technology
P. Rodriguez-Vazquez, J. Grzyb, B. Heinemann, U.R. Pfeiffer
IEEE Microwave and Wireless Components Letters 29(4), 297 (2019)
DOI: 10.1109/LMWC.2019.2899487
This letter presents a 1-m wireless link established with a set of fundamentally operated Tx/Rx direct-conversion in-phase and quadrature (IQ) radio frequency (RF) front-end modules in a 0.13-μm SiGe HBT technology featuring full chipon-board packaging. Using a 16-quadrature amplitude modulation, data rates from 20 to 100 Gb/s with an error vector magnitude from 7% to 17% were achieved at a 1-m distance. Thanks to the new mixer-first Rx, the maximum data rate improved from 90 to 100 Gb/s compared with our previous work using the amplifier-first Rx. The peak performance was reached at 230 GHz. The Tx operates at a 3.5 dB backoff from Psat showing a 3-dB RF bandwidth (BW) of 28 GHz, a Pout of 5 dBm, and an IQ imbalance below 0.7 dB. The Rx features a peak conversion gain of 8 dB, a single-sideband noise figure of 14 dB, a 3-dB RF BW of 26 GHz, and an IQ imbalance below 1 dB. This letter also provides an analysis of the RF front-end imperfections related to the large link BW.
(91) Device Architectures for High-Speed SiGe HBTs
H. Rücker, B. Heinemann
Proc. IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2019), (2019)
DOI: 10.1109/BCICTS45179.2019.8972757, (Taranto)
(92) Implémentation en Technologie Intégrée de Filtres à Fréquence Centrale Accordable en Bande D et à Bande Passante Relative Maintenue
P. Rynkiewicz, A.-L. Franc, F. Coccetti, M. Wietstruck, M. Kaynak, G. Prigent
Proc. 21st Journées Nationales Micro-Ondes (JNM 2019), (2019)
(93) Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology
A. Sammak, D. Sabbagh, N.W. Hendrickx, M. Lodari, B.P. Wuetz, A. Tosato, L. Yeoh, M. Bollani, M. Virgilio, M.A. Schubert, P. Zaumseil, G. Capellini, M. Veldhorst, G. Scappucci
Advanced Functional Materials 29(14), 1807613 (2019)
DOI: 10.1002/adfm.201807613
(94) Synthesis of Armchair Graphene Nanoribbons on Germanium-on-Silicon
V. Saraswat, Y. Yamamoto, H.J. Kim, R.M. Jacobberger, K.R. Jinkins, A.J. Way, N.P. Guisinger, M.S. Arnold
ACS Journal of Physical Chemistry C: Nanomaterials and Interfaces 123(30), 18445 (2019)
DOI: 10.1021/acs.jpcc.9b04390
(95) CVD Synthesis of Armchair Graphene Nanoribbons on Ge/Si(001)
V. Saraswat, Y. Yamamoto, H.J. Kim, R.M. Jacobberger, K.R. Jinkins, A.J. Way, N.P. Guisinger, M.S. Arnold
ECS Transactions 93(1), 133 (2019)
DOI: 10.1149/09301.0133ecst
(96) Optimization of a BEOL Aluminium Deposition Process Enabling Wafer Level Al-Al Thermo-Compression Bonding
S. Schulze, M. Wietstruck, M. Fraschke, P. Kerepesi, H. Kurz, B. Rebhan, M. Kaynak
Proc. 69th IEEE Electronic Components and Technology Conference (ECTC 2019), 218 (2019)
DOI: 10.1109/ECTC.2019.00040
(97) Novel Concept for VCSEL Enhanced Silicon Photonic Coherent Transceiver
P.M. Seiler, G. Ronniger, U. Troppenz, A. Sigmund, M. Moehrle, A. Peczek, L. Zimmermann
AIP Advances 9(10), 105114 (2019)
DOI: 10.1063/1.5120019
We present a novel concept for an integrated silicon photonic coherent transceiver using vertical-emitting laser sources at 1550 nm. In a state of the art external modulation configuration, we deploy a VCSEL on the transmit and a HCSEL on the receive side. We demonstrate the feasibility of this approach by externally modulating the VCSEL with QPSK at up to 28 Gbaud. We also perform experiments with the VCSEL-HCSEL configuration in a slave-master optical injection locking setup for future data center interconnects. The results show stable locking conditions and the VCSEL is detuned to perform predominant phase modulation. To the best of our knowledge, this is the first time direct phase modulation of a VCSEL under optical injection locking was demonstrated using two vertically emitting laser sources as master - and slave laser.
(98) Two-Element Antenna-Acitve Phase Shifter Packaging at 77 GHz
M. Seyyedesfahlan, E. Özturk, M. Kaynak, I. Tekin, A.K. Skrivervik
Proc. 13th European Conference on Antennas and Propagation (EuCAP 2019), (2019)
(99) Two-Element Antenna-Acitve Phase Shifter Packaging at 77 GHz
M. Seyyedesfahlan, E. Özturk, M. Kaynak, I. Tekin, A.K. Skrivervik
Proc. 13th European Conference on Antennas and Propagation (EuCAP 2019), (2019)
(IHP-Sabanci Joint Lab)
(100) Radiation Tolerant RF-LDMOS Transistors, Integrated into a 0.25µm SiGe-BICMOS Technology
R. Sorge, J. Schmidt, F. Reimer, Ch. Wipf, F. Korndörfer, R. Pliquett, R. Barth
Nuclear Instruments and Methods in Physics Research Section A 924, 166 (2019)
DOI: 10.1016/j.nima.2018.07.075, (strahlungsfeste Schaltkeise (Radiation))
(101) On-Chip Dispersion Measurement of the Quadratic Electro-Optic Effect in Nonlinear Optical Polymers using a Photonic Integrated Circuit Technology
P. Steglich, C. Villringer, B. Dietzel, Ch. Mai, S. Schrader, M. Casalboni, A. Mai
IEEE Photonics Journal 11(3), 4900510 (2019)
DOI: 10.1109/JPHOT.2019.2917665, (HOPBIT)
A novel method to determine the dispersion of the quadratic electro-optic effect in nonlinear optical dyes by using a silicon-on-insulator micro-ring resonator is presented. The micro-ring consists of a silicon slot waveguide enabling large electric field strength at low voltages. The dispersion of a linear conjugated dye is determined by using a two-level model for the off-resonant spectral region. Exemplary, we measure the dispersion of the nonlinear optical dye disperse red 1 (DR1) doped in a poly(methyl methacrylate) (PMMA) matrix for the telecommunication wavelength band around 1550 nm (optical C-band).
(102) Silicon-Organic Hybrid Photonics: Integration of Electro-Optical Polymers in a Photonic Integrated Circuit Technology
P. Steglich, Ch. Mai, S. Schrader, A. Mai
Proc. 236th ECS Meeting (2019), 1181 (2019)
(HOPBIT)
(103) Introductory Chapter: Fiber Optics
P. Steglich, F. De Matteis
Fiber Optics: From Fundamentals to Industrial Approach, 1st Edition, Editors: P. Steglich, F. De Matteis, Chapter 1. Introductory Chapter: Fiber Optics, IntechOpen, 1 (2019)
DOI: 10.5772/intechopen.85495, (HOPBIT)
Optical Fibers in metrology, telecommunications, sensors, manufacturing and health science have gained massive research interest. It covers materials, components and systems across the application spectrum, from interferometers for spectroscopy to fiber optic applications in medicine. This book aims to presents a collection of recent advances in fiber optics and provides a platform for practicing researchers, academics, PhD students, and other scientists to review, plan, design, analyze, evaluate, and demonstrate experimental results. This book welcomes the current progress and latest breakthroughs in emergent applications of fiber optics and specialty fibers. This includes recent developments in optical fiber communications and fiber sensors as well as the design, simulation and fabrication of novel fiber concepts.
(104) Functionalized Materials for Integrated Photonics: Hybrid Integration of Organic Materials in Silicon-Based Photonic Integrated Circuits for Advanced Optical Modulators and Light-Sources
P. Steglich, Ch. Mai, S. Bondarenko, C. Villringer, S. Pulwer, C. Zesch, B. Dietzel, S. Schrader, F. Vitale, F. De Matteis, M. Casalboni, A. Mai
Proc. 41st Progress In Electromagnetics Research Symposium (PIERS 2019), 1896 (2019)
(HOPBIT)
Photonic integrated circuits (PICs) based on silicon-on-insulator wafers have been subject of intense research efforts due to the perspective of a compact photonic integration platform with high integration density, mass-production and compatibility with the well-established CMOS technology. Potential applications lie in the fields of communication technology and optical sensing. Unfortunately, silicon has some drawbacks in terms of material properties. For example, light emitting devices based on silicon are difficult to realize because it is an indirect transition material. Moreover, silicon does not show efficient electro-optic effects but significant optical losses due to two-photon absorption and free-electron absorption.
Therefore, functionalities of current silicon photonic platforms are expanded by using hybrid integration technologies, such as micro-transfer printing, wafer- and die-bonding. An approach to overcome material deficiencies is the heterogeneous integration of assisting materials using low-temperature deposition methods. Such materials are, for example, organic nonlinear optical materials, indium-phosphide, barium titanium oxide, silicon-nitride, germanium-tin.
In this work, we present a novel fabrication process to integrate functionalized organic materials into a silicon-based PIC-technology. This advanced fabrication process enables the development of functionalized photonic devices such as high-speed electro-optical modulators and electronically or optically pumped laser-sources. The devices are based on ring resonator structures and are fabricated in a 0.25 µm SiGe BiCMOS pilot line using 200 mm silicon-on-insulator wafers. This approach gives perspective for monolithically hybrid-integrated photonic devices in an electronic PIC (EPIC)-technology.
As proof of concept, we have developed an electro-optical silicon-organic hybrid modulator based on a slot waveguide ring resonator. Supported by FEM-simulations, the slot waveguide is optimized for a maximized overlap between electrical and optical field. The slot waveguide structure provides an increased electric field strength due to the small gap between two electrodes. This gap ranges from 60 nm to 200 nm and allows for radio-frequency signal generation using complementary metal-oxide-semiconductor (CMOS)-compatible voltages.
As organic material we use the nonlinear optical dye disperse red 1 (DR1) doped in PMMA. We report on the characterization of the organic material by means of spectral ellipsometry and photometry to predict device performance and to compare our estimations with experimental results. In particular, we show that the device tunability of the fabricated ring resonator is not affected by optical losses, which reflects the off-resonant nature of the electro-optical response of DR1 at an operation wavelength of 1550 nm.
The presented fabrication process is a major step towards monolithic hybrid-integrated photonic devices using functionalized organic materials in a PIC-technology.
(105) Silicon-Organic Hybrid Photonic Devices in a Photonic Integrated Circuit Technology
P. Steglich, Ch. Mai, A. Mai
ECS Journal of Solid State Science and Technology 8(11), Q217 (2019)
DOI: 10.1149/2.0221911jss, (HOPBIT)
In this work, we present recent results on the hybrid integration of electro-optical organic
materials in a photonic integrated circuit (PIC) technology. We review some of the identified
challenges regarding process compatibility and present experimental results on the integration of organic materials in a PIC technology using a 0.25 μm SiGe BiCMOS pilotline. Here, we are focusing on electro-optical applications towards high-speed modulators with ultra-low energy consumption.
(106) Optical Biosensors Based on Silicon-On-Insulator Ring Resonator: A Review
P. Steglich, M. Hülsemann, B. Dietzel, A. Mai
Molecules: A Journal of Synthetic Chemistry and Natural Product Chemistry 24(3), 519 (2019)
DOI: 10.3390/molecules24030519, (HOPBIT)
(107) Silicon-Organic Hybrid Photonics: Integration of Electro-Optical Polymers in a Photonic Integrated Circuit Technology
P. Steglich, Ch. Mai, C. Villringer, B. Dietzel, S. Schrader, A. Mai
ECS Transactions 92(4), 187 (2019)
DOI: 10.1149/09204.0187ecst, (HOPBIT)
(108) Mid-Infrared Optical Characterization of thin SiNx Membranes
M. Stocchi, D. Mencarelli, L. Pierantoni, D. Kot, M. Lisker, A. Göritz, C. Baristiran Kaynak, M. Wietstruck, M. Kaynak
Applied Optics 58(19), 5233 (2019)
DOI: 10.1364/AO.58.005233, (IHP-Sabanci Joint Lab)
The investigation of the optical constants (e.g. the refractive index n and the extinction coeffcient k) has been performed in the Mid-InfraRed (MIR) spectrum for various Silicon Nitride (SiNx) con gurations. By exploiting the Transfer Matrix Method (TMM) formulation, photometric measurements of transmission and reflection have been used for iteratively calculating the optical parameters of interest. For ensuring the reliability of the latter, the same material from which these parameters were extracted from was deposited for three different thicknesses, e.g. 600, 200 and 100 nm. While the former is optically characterized, the remaining two are used for testing purposes. For each experimental/calculated comparison, the average (made over the whole considered spectrum interval) of the relative error never exceeds 1.5%, which ensures the correctness of the given n and k. For the sake of completeness, a detailed analysis of the intrinsic limitations arising from the very nature of the method will also be conducted.
(109) Advanced Numerical Investigation of the Heat Flux in an Array of Microbolometers
M. Stocchi, D. Mencarelli, L. Pierantoni, A. Göritz, C. Baristiran Kaynak, M. Wietstruck, M. Kaynak
Scientific Reports 9, 11078 (2019)
DOI: 10.1038/s41598-019-47472-2
The investigation of the thermal properties of an array of microbolometers has been carried out by mean of two independent numerical analysis, respectively the Direct-Simulation Monte Carlo (DSMC) and the classic diffusive approach of the Fourier’s equation. In particular, the thermal dissipation of a hot membrane placed in a low-pressure cavity has been studied for different values of the temperature of the hot body and for different values of the pressure of the environment. The results for the heat flux derived from the two approaches have then been compared and discussed.
(110) Temperature and Gate Effects on Contact Resistance and Mobility in Graphene Transistors by TLM and Y-Function Methods
F. Urban, G. Lupina, A. Grillo, N. Martucciello, A. Di Bartolomeo
Nano Express
zu finden unter: https://arxiv.org/abs/1912.04623
(Graphen)
(111) A Monolithic ASIC Demonstrator for the Thin Time-of-Flight PET Scanner
P. Valerio, R. Cardarelli, G. Iacobucci, L. Paolozzi, E. Ripiccini, D. Hayakawa, S. Bruno, A. Caltabianob, M. Kaynak, H. Rücker, M. Nessi
Journal of Instrumentation 14, P07013 (2019)
DOI: 10.1088/1748-0221/14/07/P07013
(112) PMMA Filled Through-Silicon Vias (TSVs) and Back Etch Process Controlled by Plasma Emission Interferometry
F. Villasmunta, P. Steglich, Ch. Mai, F. Heinrich, V. Ksianzou, S. Schrader, A. Mai,
Proc. 8. MikroSystemTechnik Kongress (MST 2019), (2019)
(HOPBIT)
(113) Optical Transmitter Design in a SiGe BiCMOS Photonic Platform
K. Voigt, Ch. Mai, D. Petousi, A. Peczek, D. Knoll, St. Lischke, G. Winzer, L. Zimmermann
Proc. Asia Communications and Photonics Conference (ACPC 2019), T3H.2 (2019)
(114) Inherent-Stochastic Learning in CMOS Integrated HfO2 Arrays for Neuromorphic Computing
Ch. Wenger, F. Zahari, M.K. Mahadevaiah, E. Perez, I. Beckers, H. Kohlstedt, M. Ziegler
IEEE Electron Device Letters 40(4), 639 (2019)
DOI: 10.1109/LED.2019.2900867, (NeuroMem)
(115) SiGe BiCMOS Technology with Embedded Through-Silicon Vias and Interposer Fan-Out Wafer-Level Packaging Platform
M. Wietstruck, St. Marschmeyer, S. Schulze, M. Kaynak
Proc. 1st European Microwave Conference in Central Europe (EuMCE 2019), 332 (2019)
(116) Al-Al Direct Bonding with Sub-µm Alignment Accuracy for Millimeter Wave SiGe BiCMOS Wafer Level Packaging and Heterogeneous Integration
M. Wietstruck, S. Schulze, B. Rebhan, P. Kerepesi, H. Kurz, G. Silberer, J. Meiler, S. Tolunay Wipf, Ch. Wipf, M. Kaynak
Proc. 69th IEEE Electronic Components and Technology Conference (ECTC 2019), 942 (2019)
DOI: 10.1109/ECTC.2019.00147
(117) Recent Developments on SiGe BiCMOS Technologies for mm-Wave and THz Applications
M. Wietstruck, St. Marschmeyer, S. Schulze, S. Tolunay Wipf, Ch. Wipf, M. Kaynak
Proc. IEEE MTT-S International Microwave Symposium (IMS 2019), 1126 (2019)
DOI: 10.1109/MWSYM.2019.8701049
(118) RF-MEMS Based V-Band Impedance Tuner Driven by Integrated High-Voltage LDMOS Switch Matrix and Charge Pump
Ch. Wipf, R. Sorge, S. Tolunay Wipf, A. Göritz, A. Scheit, D. Kissinger, M. Kaynak
Proc. 20th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2019), (2019)
DOI: 10.1109/SIRF.2019.8709116, (LDMOS)
To demonstrate a fully integrated RF-MEMS based system including HV generation and switching circuitry, a V-Band (40 – 75 GHz) single-stub impedance tuner comprising four RF-MEMS switches, a 40V charge pump, and LDMOS based HV switches is developed in a 0.25μm SiGe-BiCMOS technology. The chip size of the designed impedance tuning circuit enables the integration into an on-wafer RF-probe used for noise parameter and load-pull measurements. With the embedded high-voltage generation and switching circuitry the wiring effort, which is necessary to control the integrated RF-MEMS based impedance tuning chip, can be drastically reduced. The operation of the on-chip high-voltage generation and switching circuitry is demonstrated by the measured S-parameters for various combinations of activated RF-MEMS switches. The four integrated RF-MEMS switches enable 16 impedance states in the frequency range between 40 GHz and 60 GHz.
(119) RF-MEMS Based V-Band Impedance Tuner Driven by Integrated High-Voltage LDMOS Switch Matrix and Charge Pump
Ch. Wipf, R. Sorge, S. Tolunay Wipf, A. Göritz, A. Scheit, D. Kissinger, M. Kaynak
Proc. 20th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2019), (2019)
DOI: 10.1109/SIRF.2019.8709116, (MEMS Integration)
To demonstrate a fully integrated RF-MEMS based system including HV generation and switching circuitry, a V-Band (40 – 75 GHz) single-stub impedance tuner comprising four RF-MEMS switches, a 40V charge pump, and LDMOS based HV switches is developed in a 0.25μm SiGe-BiCMOS technology. The chip size of the designed impedance tuning circuit enables the integration into an on-wafer RF-probe used for noise parameter and load-pull measurements. With the embedded high-voltage generation and switching circuitry the wiring effort, which is necessary to control the integrated RF-MEMS based impedance tuning chip, can be drastically reduced. The operation of the on-chip high-voltage generation and switching circuitry is demonstrated by the measured S-parameters for various combinations of activated RF-MEMS switches. The four integrated RF-MEMS switches enable 16 impedance states in the frequency range between 40 GHz and 60 GHz.
(120) Horizontal DEMA Attack as the Criterion to Select the Best Suitable EM Probe
Ch. Wittke, I. Kabin, D. Klann, Z. Dyka, A. Datsuk, P. Langendörfer
zu finden unter: http://eprint.iacr.org/
(Total Resilience)
Implementing cryptographic algorithms in a tamper resistant way is an extremely complex task as the algorithm used and the target platform have a significant impact on the potential leakage of the implementation. In addition the quality of the tools used for the attacks is of importance. In order to evaluate the resistance of a certain design against electromagnetic emanation attacks – as a highly relevant type of attacks – we discuss the quality of different electromagnetic (EM) probes as attack tools. In this paper we propose to use the results of horizontal attacks for comparison of measurement setup and for determining the best suitable instruments for measurements. We performed horizontal differential electromagnetic analysis (DEMA) attacks against our ECC design that is an im-plementation of the Montgomery kP algorithm for the NIST elliptic curve B-233. We experimented with 7 different EM probes under same conditions: attacked FPGA, design, inputs, measurement point and measurement equipment were the same, excepting EM probes. The used EM probe influences the success rate of performed attack significantly. We used this fact for the comparison of probes and for determining the best suitable one.
(121) Nickel Texture Adjustment on Si and Ge and its Impact on Nickel Silicide and Germanide
D. Wolansky, P. Zaumseil, M.H. Zoellner, S. Schulze
ECS Transactions 93(1), 97 (2019)
DOI: 10.1149/09301.0097ecst, (Taranto)
(122) Ge/SiGe Multi Quantum Well Fabrication by Using Reduced Pressure Chemical Vapor Deposition
Y. Yamamoto, O. Skibitzki, M.A. Schubert, M. Scuderi, F. Reichmann, M.H. Zoellner, G. Capellini, B. Tillack
Proc. 51st International Conference on Solid State Devices and Materials (SSDM 2019), 293 (2019)
(FLASH)
(123) Group IV Heteroepitaxy for Advanced Electronic Devices Integrated in BiCMOS Technology
Y. Yamamoto, H. Rücker, B. Heinemann, St. Lischke, C. Baristiran Kaynak, M. Kaynak, B. Tillack
ECS Transactions 93(1), 1 (2019)
DOI: 10.1149/09301.0001ecst
(124) Self-Ordered Ge Nanodot Fabrication by using Reduced Pressure Chemical Vapor Deposition
Y. Yamamoto, Y. Itoh, P. Zaumseil, M.A. Schubert, G. Capellini, K. Washio, B. Tillack
ECS Journal of Solid State Science and Technology 8(3), P190 (2019)
DOI: 10.1149/2.0091903jss
(125) Influence of Annealing Condition on Threading Dislocation Density of Ge Grown by RPCVD
Y. Yamamoto, P. Zaumseil, M.A. Schubert, B. Tillack
ECS Transactions 93(1), 87 (2019)
DOI: 10.1149/09301.0087ecst
(126) Group IV Heteroepitaxy Processes for Advanced Electronics Devices Integration into BiCMOS Technology
Y. Yamamoto, H. Rücker, B. Heinemann, St. Lischke, C. Baristiran Kaynak, M. Kaynak, B. Tillack
Proc. 8th International Symposium on Control of Semiconductor Interfaces (ISCSI 2019), 89 (2019)
(127) A Silicon Based 4.5-GHz Near-Field Capacitive Sensing Imaging Array
J. Zhou, R. Al Hadi, W. Qiao, Y. Zhao, C. Chen, M. Kaynak, X. Cheng, J.C M. Hwang, M.-C.F. Chang
Proc. IEEE MTT-S International Microwave Symposium (IMS 2019), 797 (2019)
DOI: 10.1109/MWSYM.2019.8700976
(128) Compact Manganite-Graphene Magnetoresistive Sensor
N. Zurauskiene, R. Lukose, S. Balevicius, V. Stankevic, S. Kersulis, V. Plausinaitiene, M. Vagner, R. Navickas
IEEE Magnetics Letters 10, 8105605 (2019)
DOI: 10.1109/LMAG.2019.2940172
A magnetic field sensor based on a manganite/Al2O3-substrate/three-layer graphene structure operating in the range of 0.1–20 T was designed and fabricated. The La0.9Sr0.1 Mn1.2O3 (LSMO) manganite film and graphene layers were prepared on the opposite sides of polycrystalline Al2O3 substrate, which enabled scaling of the effective volume of the device to about 0.16 mm3. The combination of two materials—graphene with positive magnetoresistance (MR) and manganite with negative MR—led to a significant increase of the response signal and sensitivity compared with individual graphene or manganite sensors. This was achieved by increasing the MR of the individual manganite and graphene elements. The MR of LSMO was increased by using pulsed-injection metal-organic chemical vapor deposition based on two precursor sources with tunable vapor supersaturation and growth rate. The MR of three-layer graphene was optimized by changing the width/length ratio of the rectangular planar configuration and scaling the dimensions from millimeters to few hundred micrometers. The result was a maximal sensitivity of 72 mV/VT in the field range of 1–3 T.
F. Akhtar, J. Dabrowski, M. Lisker, P. Zaumseil, S. Schulze, A. Jouvray, P. Caban, A. Mai, Ch. Wenger, M. Lukosius
Thin Solid Films 690, 137565 (2019)
DOI: 10.1016/j.tsf.2019.137565, (Graphen)
In the present study, 8-in. silicon substrates, covered with thin (200 nm) polycrystalline nickel films have been employed for the growth of graphene by chemical vapor deposition. In order to control the uniformity and coverage of the graphene, thin nickel layers were used due to their less deep grain boundary grooves and ability to store less carbon in comparison with thick nickel films (>500 nm). The preferential sites for the growth of multilayer graphene were influenced by the surface pretreatment of the polycrystalline nickel films at 1025 °C under different ambient conditions (hydrogen and vacuum). Significant differences in the surface morphologies were observed for the annealed nickel films. The growth of larger grains up to ~6 μm for the films annealed in hydrogen could be attributed to hydrogen interstitials. On the other hand, grains up to ~3 μm were extracted for the films annealed in vacuum. Graphene was grown after exposing the annealed Ni films to ethylene at 925 °C. The lower range (42–106 cm−1) of full width at half maxima of the 2D band as determined by Raman spectroscopy was obtained for the films annealed in hydrogen as compared to the ones annealed in vacuum (51–128 cm−1), indicating that the thickness uniformity of graphene was strongly influenced by the surface modifications of nickel films.
(2) Use of Silicon Photonics Wavelength Multiplexing Techniques for Fast Parallel Readout in High Energy Physics
G. Alimonti, R. Ammendola, A. Andreazza, D. Badoni, V. Bonaiuto, M. Casalboni, F. De Matteis, A. Mai, G. Paoluzzi, P. Prosposito, A. Salamon, G. Salina, E. Santovetti, F. Sargeni, A. Satta, S. Schrader, P. Steglich
Nuclear Instruments and Methods in Physics Research Section A 936, 601 (2019)
DOI: 10.1016/j.nima.2018.09.088
Optical wavelength multiplexing is a widely used technique in Information and Communication Technology to increase maximum data transmission bandwidth on a single optical fiber. We propose wavelength multiplexing/ demultiplexing using optical Ring Resonators (RR) on a silicon photonics circuit for fast timing highly segmented detectors readout. A cascaded microrings, sharing a common bus waveguide with individual drop waveguides, can be used to encode the readout of an array of detectors on a single optical fiber. The device works using a silicon strip-waveguide coupled to a set of N high Q-factor RR filters driven by a different ASIC (Application-Specific Integrated Circuit) front-end electronics.
(3) Ultrafast Carrier Recombination in Highly N-Doped Ge-on-Si Films
J. Allerbeck, A.J. Herbst, Y. Yamamoto, G. Capellini, M. Virgilio, D. Brida
Applied Physics Letters 114(24), 241104 (2019)
DOI: 10.1063/1.5088012, (Ge Laser)
(4) A Broadband Dual-Polarized Terahertz Direct Detector in a 0.13-μm SiGe HBT Technology
M. Andree, J. Grzyb, R. Jain, B. Heinemann, U.R. Pfeiffer
Proc. IEEE MTT-S International Microwave Symposium (IMS 2019), 500 (2019)
DOI: 10.1109/MWSYM.2019.8700871, (Dotseven)
(5) Design and Implementation of Injection Locked Oscillator Biosensors
M. Babay, C. Dalmay, B. Barelaud, E.C. Durmaz, C. Baristiran Kaynak, M. Kaynak, D. Cordeau, A. Pothier
Proc. 49th European Microwave Week (EuMW 2019), 168 (2019)
DOI: 10.23919/EuMC.2019.8910746, (SUMCASTEC)
(6) Lab-on-a-Chip for Cellular Analysis by Dielectric Spectroscopy Based on Injection Locked Oscillators
M. Babay, C. Dalmay, B. Barelaud, E.C. Dumaz, C. Baristiran Kaynak, M. Kaynak, D. Cordeau, A. Pothier
Proc. 6th PLUridisciplinaire sur les Matériaux, l’Environnement et l’Electronique (PLUMEE 2019), 9 (2019)
(7) Potentialités d’Architectures de Biocapteurs Basées sur des Oscillateurs Hyperfréquences Verrouillés par Injection
M. Babay, C. Dalmay, E.C. Dumaz, C. Baristiran Kaynak, M. Kaynak, D. Cordeau, A. Pothier
Proc. 21st Journées Nationales Micro-Ondes (JNM 2019), (2019)
(SUMCASTEC)
(8) Wafer-Level Packaging of Photonics and Electronics for Terabit-Scale Optical Interconnects
P. Bakopoulos, P. Ossieur, A.J. Trindade, P. Steglich, I. Krestnikov, F. Floris, G. Roelkens, M. Inac, D. Kalavrouziotis, D. Gomez, L. Zimmermann, J. Van Campenhout, E. Mentovich
Proc. 41st PhotonIcs & Electromagnetics Research Symposium (PIERS 2019), 113 (2019)
(9) Dielektrophorese-basiertes Lab-on-Chip-System zur Separation von Mikroalgen
A. Barai, J. Flügge, A. Hutari, P. Neubauer, M. Birkholz
Proc. 8. MikroSystemTechnik Kongress (MST 2019), 651 (2019)
(SepaDiElo)
(10) Dielektrophorese-basiertes Lab-on-Chip-System zur Separation von Mikroalgen
A. Barai, J. Flügge, A. Hutari, P. Neubauer, M. Birkholz
Proc. 8. MikroSystemTechnik Kongress (MST 2019), 651 (2019)
(Bioelectronics)
(11) Microalgae Cell Separation and Concentration in a Microfluidic Channel under the Dielectrophoresis (DEP) Effect
A. Barai, N. Boldt, M. Birkholz
COMSOL Conference 2019, (2019)
(SepaDiElo)
(12) Mechanical and Thermal Modeling of an Uncooled Microbolometer
C. Baristiran Kaynak, A. Göritz, Y. Yamamoto, M. Wietstruck, M. Stocchi, K.E. Unal, M.B. Ozdemir, Y. Ozsoy, Y. Gurbuz, M. Kaynak
Proc. 1st European Microwave Conference in Central Europe (EuMCE 2019), 339 (2019)
(IHP-Sabanci Joint Lab)
(13) Process Effects on the Noise Performance of SiGe/Si Multi Quantum Well Thermistor
C. Baristiran Kaynak, Y. Yamamoto, A. Göritz, F. Korndörfer, M. Stocchi, M. Wietstruck, Y. Gurbuz, M. Kaynak
ECS Transactions 93(1), 105 (2019)
DOI: 10.1149/09301.0105ecst, (IHP-Sabanci Joint Lab)
(14) FEM Modeling on Microbolometer Structures
C. Baristiran Kaynak, A. Göritz, Y. Yamamoto, A. Trusch, M. Stocchi, M. Wietstruck, K.E. Unal, M.B. Ozdemir, Y. Ozsoy, Y. Gurbuz, M. Kaynak
Proc. 8. MikroSystemTechnik Kongress (MST 2019), 658 (2019)
(IHP-Sabanci Joint Lab)
(15) Thickness Effect of SiGe Layers on SiGe/Si Quantum Well Based Thermistor Performance
C. Baristiran Kaynak, Y. Yamamoto, A. Göritz, F. Teply, M. Stocchi, M. Wietstruck, Y. Gurbuz, M. Kaynak
Proc. 51st International Conference on Solid State Devices and Materials (SSDM 2019), PS 9-04 (2019)
(IHP-Sabanci Joint Lab)
(16) Development and Mechanical Modeling of Si1-xGex/Si MQW Based Uncooled Microbolometers in a 130 nm BiCMOS
C. Baristiran Kaynak, A. Göritz, Y. Yamamoto, M. Wietstruck, M. Stocchi, K.E. Unal, M.B. Ozdemir, Y. Ozsoy, Y. Gurbuz, M. Kaynak
Proc. 20th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SIRF 2019), (2019)
DOI: 10.1109/SIRF.2019.8709124, (IHP-Sabanci Joint Lab)
(17) Spectroscopic Reflectometry for Characterization of Through Silicon Via Profile of Bosch Etching Process
J. Bauer, O. Fursenko, St. Marschmeyer, F. Heinrich, F. Villasmunta, C. Villringer, C. Zesch, S. Schrader
Journal of Vacuum Science and Technology B 37(6), 062205 (2019)
DOI: 10.1116/1.5120617
(18) Spectroscopic Reflectometry for Characterization of Through Silicon Via Profile of Bosch Etching Process
J. Bauer, O. Fursenko, St. Marschmeyer, F. Heinrich, F. Villasmunta, C. Villringer, C. Zesch, S. Schrader
Proc. 8th International Conference on Spectroscopic Ellipsometry (ICSE 2019), abstr. book 297 (2019)
(19) Contactless Parametric Characterization of Bandgap Engineering in P-Type FinFETs using Spectral Photon Emission
A. Beyreuther, I. Vogt, N. Herfurth, T. Nakamura, G.G. Fischer, B. Motamedi, C. Boit
Microelectronics Reliability 92, 143 (2019)
DOI: 10.1016/j.microrel.2018.11.008
In the last decade it has become increasingly popular to use germanium enriched silicon in modern field effect transistors (FET) due to the higher intrinsic mobility of both holes and electrons in SiGe as compared to Si. Whether used in the source/drain region (S/D) as compressive stressor, which is an efficient mobility booster on Si channel devices, or as channel material, the SiGe increases channel carrier mobility and thus enhancing device performance. Because the germanium content modifies the effective bandgap energy EG, this material characteristic is an important technology performance parameter. The bandgap energy can be determined in an LED-like operation of electronic devices, requiring forward biased p-n junctions. P-n junctions in FETs are source or drain to body diodes, usually grounded or reversely biased. This investigation applies a bias to the body that can trigger parasitic forward operation of the source/drain to body p-n junction in any FET. Spectral photon emission (SPE) is used here as a non-destructive method to characterize engineered bandgaps in operative transistor devices, while the device remains fully functional.
Before applying the presented technique to a p-type FinFET device, it is put to the proof by verifying the nominal silicon bandgap on an (unstrained) 120nm technology FET. Subsequently the characterization capability for bandgap engineering is then successfully demonstrated on a SiGe:C heterojunction bipolar transistor (HBT). In a final step, the bandgap energy EG of a 14/16nm p-type FinFET was determined to be 0.84eV, which corresponds to a Si0.7Ge0.3 mixture. The presented characterization technique is a contactless fault isolation method that allows for quantitative local investigation of engineered bandgaps in p-type FinFETs.
(20) EOFM Measurements of Lateral and Vertical Bipolar Transistors in Silicon and SiGe:C Technologies
A. Beyreuther, N. Herfurth, E. Amini, T. Nakamura, G.G. Fischer, S. Keil, C. Boit
Proc. 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2019), (2019)
DOI: 10.1109/IPFA47161.2019.8984762
(21) Thin Film and Multilayers
M. Birkholz
International Tables for Crystallography, Volume H: Powder Diffraction, 1st Edition, Editors: C.J. Gilmore, J.A. Kaduk, H. Schenk, Chapter 5.4. Thin Films and Multilayers, Wiley, 581 (2019)
DOI: 10.1107/97809553602060000969
(22) Simulation Study of Released Silicon-on-Insulator Slot Waveguides in a Photonic Integrated Circuit Technology
S. Bondarenko, P. Steglich, S. Schrader, A. Mai
Proc. 41st PhotonIcs & Electromagnetics Research Symposium (PIERS 2019), 1 (2019)
(HOPBIT)
(23) Comparative Study of Nano-Slot Silicon Waveguides Covered by Dye Doped and Undoped Polymer Cladding
S. Bondarenko, C. Villringer, P. Steglich
Applied Sciences 9(1), 89 (2019)
DOI: 10.3390/app9010089, (HOPBIT)
(24) Ultra-Low Noise Amplifier for X-Band SiGe BiCMOS Phased Array Applications
C. Caliskan, I. Kalyoncu, M. Yazici, M. Kaynak, Y. Gurbuz
IEEE Transactions on Circuits and Systems II 66(9), 1507 (2019)
DOI: 10.1109/TCSII.2019.2891133, (IHP-Sabanci Joint Lab)
This brief presents, a low noise amplifier (LNA) with sub-1dB noise figure (NF) at X-Band. Different than generally known noise-and-power match technique, the presented LNA is designed by considering impedance between the base-collector terminals of an HBT in common-emitter configuration. The presented amplifier stage can achieve sub-1 dB NF performance with ∼10 dB gain. The LNA dissipates 19.8 mW of dc power and has 0.77 dB NF while occupying 0.4 mm2. It succeeds 1.5 dBm of input-referred compression point. To the best of authors’ knowledge, the presented work achieves the best NF performance in the literature of any LNA that utilizes SiGe technology.
(25) Finite-Element Modelling of Stress Induced Wafer Warpage for a Full BiCMOS Process
Z. Cao, A. Göritz, M. Wietstruck, S. Tolunay Wipf, A. Trusch, M. Kaynak
Proc. 20th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2019), (2019)
DOI: 10.1109/SIRF.2019.8709125, (Bend-IT)
A finite element method (FEM) wafer scale model considering all the process details, e.g. metal patterning, via etching, etc., is built for a state-of-the-art 0.13-µm SiGe BiCMOS fully processed 8-inch wafer. Associated layer residual stress and wafer warpage are extracted and compared with hand calculation and experimental results. The comparison results show that the wafer warpage predicted by FEM model demonstrates only about 10 µm maximum deviation over an 80 µm-bowed wafer. An accurate stress model for an 8-inch wafer including full BiCMOS process is successfully developed and validated.
(26) Field-Modulated Graphene/Silicon Schottky Diodes Fabricated in a fully CMOS-Compatible Process Line
C.A. Chavarin, J. Dabrowski, G. Luongo, M. Lisker, A. Jouvray, P. Caban, A. Di Bartolomeo, Ch. Wenger, A. Mai, M. Lukosius
Proc. International Conference Nano-M&D “Properties, Fabrication and Applications of Nano-Materials and Nano-Devices” (Nano-M&D 2019), 63 (2019)
(Graphica)
(27) Impact of SiGe HBT Hot-Carrier Degradation on the Broadband Amplifier Output Supply Current
M. Couret, G.G. Fischer, I. Garcia-Lopez, M. De Matos, F. Marc, C. Maneux
Proc. 49th IEEE European Solid-State Device Research Conference (ESSDERC 2019), 154 (2019)
DOI: 10.1109/ICMTS.2019.8730964, (Taranto)
(28) Physical, Small-Signal and Pulsed Thermal Impedance Characterization of Multi-Fingers SiGe HBTs Close to the SOA Edges
M. Couret, G.G. Fischer, S. Fregonese, T. Zimmer, C. Maneux
Proc. 32nd IEEE International Conference on Microelectronic Test Structures (ICMTS 2019), 154 (2019)
DOI: 10.1109/ICMTS.2019.8730964, (Taranto)
(29) Optical Phase Conjugation in a Silicon Waveguide with Lateral p-i-n Diode for Nonlinearity Compensation
F. Da Ros, A. Gajda, E.P. da Silva, A. Peczek, A. Mai, K. Petermann, L. Zimmermann, L.K. Oxenlowe, M. Galili
IEEE Journal of Lightwave Technology 37(2), 323 (2019)
DOI: 10.1109/JLT.2018.2873684, (SOPA ZI 1283/3-1)
In-line optical phase conjugation is a well-known technique to enhance the received signal quality through nonlinearity compensation. Being able to implement the conjugation in cm-scale highly nonlinear devices, which can be integrated on a silicon chip, could potentially lead to several benefits in terms of small footprint and cointegration with linear signal processing functionalities, as well as lower power consumption. Here, we focus on silicon waveguides to implement the optical phase conjugation through four-wave mixing. The challenges in terms of conversion efficiency imposed by the presence of nonlinear loss are tackled by using a lateral p-i-n diode along the waveguide. When the diode is reverse biased, the conversion efficiency can be effectively enhanced by the decrease in free-carrier absorption. Low-penalty conversion can therefore be achieved for wavelength-division multiplexing (WDM) signals and the high quality of the generated idlers is critical in demonstrating a 1-dB Q-factor improvement through optical phase conjugation in a 5-WDM channel 16-QAM transmission system after 644 km of dispersion-compensated transmission.
(30) Automated Extraction of Silicon Dioxide Thermal Conductivity Values Based on Electro-Thermal Simulations
A. Datsuk, F. Korndörfer, M. Kaynak, Z. Cao, K. Dhawan, V. Timoshenkov
Proc. IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus 2019), 1909 (2019)
DOI: 10.1109/eiconrus.2019.8657035, (Design Kit)
Abstract — An approach to extract the silicon dioxide thermal conductivity values is presented. A variety of metal resistor test structures are produced using a 0.25 um SiGe BiCMOS technology. Based on the measured temperature rise values an automated extraction method to optimize the thermal conductivity of silicon dioxide is developed. Electrical and thermal co-simulations were performed for the optimization using the aforementioned test structures. The optimized thermal conductivity values were added to the material stack-up file and embedded in the process design kit. The updated material stack-up file allows designers to perform accurate computation of the metal structures and flip-chips. The maximum deviation of 8% between the electro-thermal simulations and the measurements is achieved.
(31) Nano-Imaging of Biological Cells using High Refractive Index Barium Titanate Glass (BTG) Microspheres on Lab on Chip Platform
R. Dhama, N.M. Karim, C. Palego, C. Baristiran Kaynak, E.C. Durmaz, M. Kaynak, Z. Wang
Proc. Biomedical Applications of Electromagnetic Energy Workshop 2019, (2019)
(SUMCASTEC)
(32) Modular Coherent Photonic-Aided Payload Receiver for Communications Satellites
V.C. Duarte, J.G. Prata, C.F. Ribeiro, R.N. Nogueira, G. Winzer, L. Zimmermann, R. Walker, S. Clements, M. Filipowicz, M. Napierala, T. Nasilowski, J. Crabb, M. Kechagias, L. Stampoulidis, J. Anzalchi, M.V. Drummond
Nature Communications 10, 1984 (2019)
Ubiquitous satellite communications are in a leading position for bridging the digital divide. Fulfilling such a mission will require satellite services on par with fibre services, both in bandwidth and cost. Achieving such a performance requires a new generation of communications payloads powered by large-scale processors, enabling a dynamic allocation of hundreds of beams with a total capacity beyond 1 Tbit s−1. The fact that the scale of the processor is proportional to the wavelength of its signals has made photonics a key technology for its implementation. However, one last challenge hinders the introduction of photonics: while large-scale processors demand a modular implementation, coherency among signals must be preserved using simple methods. Here, we demonstrate a coherent photonic-aided receiver meeting such demands. This work shows that a modular and coherent photonic-aided payload is feasible, making way to an extensive introduction of photonics in next generation communications satellites.
(33) Caution: GALS-Ification as a Means against SCA Attacks
Z. Dyka, I. Kabin, D. Klann, F. Vater, P. Langendörfer
Proc. 17th IEEE East-West Design & Test Symposium (EWDTS 2019), 97 (2019)
DOI: 10.1109/EWDTS.2019.8884465, (Total Resilience)
(34) A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform
F. Eltes, Ch. Mai, D. Caimi, M. Kroh, Y. Popoff, G. Winzer, D. Petousi, St. Lischke, J.E. Ortmann, L. Czornomaz, L. Zimmermann, J. Fompeyrine, S. Abel
IEEE Journal of Lightwave Technology 37(5), 1456 (2019)
DOI: 10.1109/JLT.2019.2893500, (PHRESCO)
To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing stand-alone devices on dedicated silicon substrates, incompatible with the fabrication process in silicon foundries. In this work, we demonstrate monolithic integration of electro-optic modulators based on the Pockels effect in barium titanate (BTO) thin films into the back-end-of-line of a photonic integrated circuit (PIC) platform. Molecular wafer bonding allows fully PIC-compatible integration of BTO-based devices and is, as shown, scalable to 200 mm wafers. The PIC-integrated BTO Mach–Zehnder modulators outperform conventional Si photonic modulators in modulation efficiency, losses, and static tuning power. The devices show excellent VπL (0.2 Vcm) and VπLα (1.3 VdB), work at high speed (25 Gbps), and can be tuned at low-static power consumption (100 nW). Our concept demonstrates the possibility of monolithic integration of Pockels-based electro-optic modulators in advanced silicon photonic platforms.
(35) Diagnostic of Graphene on Ge(100)/Si(100) in a 200 mm Wafer Si Technology Environment by Spectroscopic Ellipsometry/Reflectometry
O. Fursenko, M. Lukosius, J. Bauer, C. Villringer, H. Lux, F. Bärwolf, M. Lisker, A. Mai
Journal of Vacuum Science and Technology B 37(6), 062927 (2019)
DOI: 10.1116/1.5122792
The successful integration of graphene into microelectronic devices depends strongly on the availability of fast and nondestructive characterization methods of graphene deposited on large diameter production wafers. Here we demonstrated a diagnostic of graphene on 200 mm Ge(100)/Si(100) wafer performed by fast and nondestructive metrology method based on combination of spectroscopic ellipsometry and reflectometry (SE/R) realized in wafer optical metrology tool. A robust procedure for unambiguous thickness monitoring of all components of a multilayer film stack, including graphene, interface layer GeOx underneath graphene and surface roughness is developed and applied for process control. We found a relationship between the quality of graphene and the growth of GeOx interface layer beneath graphene. The enhancement oxidation of Ge beneath graphene was registered as a long term process. SE/R measurements were validated and complemented by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Raman spectroscopy and Secondary Ion Mass Spectrometry (SIMS). Our comparative study shows high potential of optical metrology for graphene quality diagnostics deposited on Ge/Si structures due to its great sensitivity, repeatability and flexibility realized in a nondestructive way.
(36) Diagnostic of Graphene on 200 mm Ge(100)/Si(100) Wafers by Spectroscopic Ellipsometry
O. Fursenko, M. Lukosius, J. Bauer, C. Villringer, M. Fraschke, M. Lisker, A. Mai
Proc. 8th International Conference on Spectroscopic Ellipsometry (ICSE 2019), abstr. book 178 (2019)
(37) Focusing 1D Silicon Photonic Grating Coupler in Photonic BiCMOS Technology for the Excitation of the Fundamental TM Mode
G. Georgieva, K. Voigt, L. Zimmermann
Proc. 41st PhotonIcs & Electromagnetics Research Symposium (PIERS 2019), 983 (2019)
DOI: 10.1109/PIERS-Spring46901.2019.9017259
(38) Total Ionizing Dose Effects in 70-GHz Bandwidth Photodiodes in a SiGe Integrated Photonics Platform
P.S. Goley, G.N. Tzintzarov, S. Zeinolabedinzadeh, A. Ildefonso, K. Motoki, R. Jiang, E.X. Zhang, D.M. Fleetwood, L. Zimmermann, M. Kaynak, St. Lischke, Ch. Mai, J.D. Cressler
IEEE Transactions on Nuclear Science 66(1), 125 (2019)
DOI: 10.1109/TNS.2018.2885327
Silicon waveguide (WG) integrated p-i-n germanium photodiodes (PDs) from a monolithic electronic-photonic integrated circuit technology were exposed to ionizing radiation from a 10-keV X-ray source to investigate total ionizing dose effects. Existing work on radiation effects in PDs, which is almost entirely based on normal-incidence PDs (rather than WG-integrated PDs), is reviewed to provide context and a framework for understanding the measurement results. Back-end-of-line considerations suggest the enhancement of the ionizing dose due to high-Z materials near the PD. PD performance was characterized in terms of dark current, S-parameters, dc photocurrent response, and optical-to-electrical conversion frequency response, shortly before and after irradiation. No significant degradation was observed, indicating that these devices may be suitable for applications in harsh radiation environments.
(39) A Lens-Coupled On-Chip Antenna for Dual-Polarization SiGe HBT THz Direct Detector
J. Grzyb, M. Andree, R. Jain, B. Heinemann, U.R. Pfeiffer
IEEE Antennas and Wireless Propagation Letters 18(11), 2404 (2019)
DOI: 10.1109/LAWP.2019.2927300
In this letter, a silicon lens-coupled dual-polarization on-chip ring antenna for THz direct detection in 0.13 μm SiGe heterojunction bipolar transistor (HBT) technology is presented. In particular, various circuit-antenna co-design aspects are addressed, including the detector frequency-dependent driving impedance and responsivity, and the necessity of accommodating multiple dc signal lines in the antenna layout. Due to an adequate circuit/electromagnetic (EM) modeling approach, close-to-optimum detector operation in a near-THz fractional bandwidth with consistent radiation patterns up to 1 THz and state-of-the-art peak optical responsivity of 3.1 A/W around 400-500 GHz among silicon direct detectors could be demonstrated.
(40) The Influence of RF Front-End Imperfections on Performance of a 220-260 GHz Tunable M-QAM Wireless Link in SiGe HBT Technology
J. Grzyb, P. Rodriguez-Vazquez, B. Heinemann, U.R. Pfeiffer
Proc. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019), (2019)
DOI: 10.1109/IRMMW-THz.2019.8873856
(41) Coherent ePIC Receiver for 64 GBaud QPSK in 0.25 μm Photonic BiCMOS Technology
S. Gudyriev, C. Kress, H. Zwickel, J.N. Kemal, St. Lischke, L. Zimmermann, C. Koos, J.C. Scheytt
IEEE Journal of Lightwave Technology 37(1), 103 (2019)
DOI: 10.1109/JLT.2018.2881107
(42) A 125–143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch
J. Heredia, M. Ribó, L. Pradell, S. Tolunay Wipf, A. Göritz, M. Wietstruck, Ch. Wipf, M. Kaynak
IEEE Microwave and Wireless Components Letters 29(5), 339 (2019)
DOI: 10.1109/LMWC.2019.2906595
In this letter, a 125–143-GHz frequencyreconfigurable BiCMOS compact low-noise amplifier (LNA) is presented for the first time. It consists of two cascode stages and was fabricated using a 0.13-μm SiGe:C BiCMOS process, which integrates RF-MEMS switches. A systematic general design procedure to obtain a balanced gain and noise figure in both frequency states is proposed. The LNA size is minimized by using only one RF-MEMS switch to select the frequency band and a multimodal three-line microstrip structure in the input matching network. The measured gain and noise figure are 18.2/16.1 and 7/7.7 dB at 125/143 GHz. The power consumption is 36.8 mW. The measured results are in good agreement with simulations.
(43) Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch
J. Heredia, M. Ribó, L. Pradell, S. Tolunay Wipf, A. Göritz, M. Wietstruck, Ch. Wipf, M. Kaynak
Micromachines 10(10), 00632 (2019)
DOI: 10.3390/mi10100632
A 120–140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 m SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal three-line microstrip structure in the input matching network are used to obtain a LNA chip of miniaturized size. A systematic design procedure is applied to obtain a perfectly balanced gain and noise figure in both frequency states (120 GHz and 140 GHz). The measured gain and noise figure are 14.2/14.2 dB and 8.2/8.2 dB at 120/140 GHz respectively, in very good agreement with circuit/electromagnetic co-simulations. The LNA chip and core areas are 0.197 mm2 and 0.091 mm2, respectively, which supposes an area reduction of 23.4% and 15.2% compared to other LNAs reported in this frequency band. The experimental results validate the design procedure and its analysis.
(44) Spiral Microfluidic Devices for Cell Separation and Sorting in Bioprocesses
N. Herrmann, P. Neubauer, M. Birkholz
Biomicrofluidics 13(6), 061501 (2019)
DOI: 10.1063/1.5124705, (Bioelectronics)
Inertial microfluidic systems have been arousing interest in medical applications due to their simple and cost-efficient use. However, comparably small sample volumes in the microliter and milliliter ranges have so far prevented efficient applications in continuous bioprocesses. Nevertheless, recent studies suggest that these systems are well suited for cell separation in bioprocesses because of their facile adaptability to various reactor sizes and cell types. This review will discuss potential applications of inertial microfluidic cell separation systems in downstream bioprocesses and depict recent advances in inertial microfluidics for bioprocess intensification. This review thereby focusses on spiral microchannels that separate particles at a moderate Reynolds number in a laminar flow (Re < 2300) according to their size by applying lateral hydrodynamic forces. Spiral microchannels have already been shown to be capable of replacing microfilters, extracting dead cells and debris in perfusion processes, and removing contaminant microalgae species. Recent advances in parallelization made it possible to process media on a liter-scale, which might pave the way toward industrial applications.
(45) A 50 ps Resolution Monotlithic Active Pixel Sensor Without Internal Gain in SiGe BiCMOS Technology
G. Iacobucci, R. Cardarelli, S. Debieux, F.A. Di Bello, Y. Favre, D. Hayakawa, M. Kaynak, M. Nessi, L. Paolozzi, H. Rücker, D.M.S. Sultan, P. Valerio
Journal of Instrumentation 14, P1108 (2019)
DOI: 10.1088/1748-0221/14/11/P11008
(46) A 26-GHz Vector Modulator in 130-nm SiGe BiCMOS Achieving Monotonic 10-b Phase Resolution Without Calibration
I. Kalyoncu, A. Burak, M. Kaynak, Y. Gurbuz
Proc. IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2019), 75 (2019)
DOI: 10.1109/RFIC.2019.8701733, (IHP-Sabanci Joint Lab)
(47) A Large-Signal SPICE Model for Depletion-Type Silicon Ring Modulators
M. Kim, M. Shin, M.-H. Kim, B.-M. Yu, Y. Kim, Y. Ban, St. Lischke, Ch. Mai, L. Zimmermann, W.-Y. Choi
Photonics Research 7(9), 948 (2019)
DOI: 10.1364/PRJ.7.000948
(48) Parametric Optimization of Depletion-Type Si Micro-Ring Modulator Performances
Y. Kim, Y. Jo, M. Kim, B.-M. Yu, Ch. Mai, St. Lischke, L. Zimmermann, W.-Y. Choi
Japanese Journal of Applied Physics Pt. 1 58(6), 062006 (2019)
DOI: 10.7567/1347-4065/ab22ce
(49) A 4×25-Gbps Monolithically Integrated Si Photonic WDM Transmitter with Ring Modulators
M. Kim, K. Park, W.-S. Oh, Ch. Mai, St. Lischke, L. Zimmermann, W.-Y. Choi
Proc. IEEE Optical Interconnects Conference (OI 2019), (2019)
DOI: 10.1109/OIC.2019.8714557
(50) A Temperature Controller IC for Maximizing Si Micro-Ring Modulator Optical Modulation Amplitude
M.-H. Kim, L. Zimmermann, W.-Y. Choi
IEEE Journal of Lightwave Technology 37(4), 1200 (2019)
DOI: 10.1109/JLT.2018.2889899, (Photonics)
We present a custom-designed integrated circuit (IC) implemented in 0.25-μm BiCMOS technology that can automatically control the Si micro-ring modulator (MRM) temperature for optimal modulation characteristics. The IC monitors the optical modulation amplitude (OMA) of a Si MRM and provides the optimal heater setting for the maximum OMA. The IC consists of trans-impedance amplifier, power detector, track-and-hold circuit, comparator, digital-to analog converter, and digital controller, all of which are integrated in a single chip. We demonstrate that, with this IC, a Si MRM can provide the maximum OMA for 25-Gb/s operation despite changes in temperature and input optical power.
(51) On the Impact of Strained PECVD Oxide Layers on Oxide Precipitation in Silicon
G. Kissinger, D. Kot, M. Lisker, A. Sattler
ECS Journal of Solid State Science and Technology 8(4), N79 (2019)
DOI: 10.1149/2.0141904jss, (Future Silicon Wafers)
PECVD oxide layers with different layer stress ranging from about 1 MPa to 305 MPa were deposited on silicon wafers with similar concentration of interstitial oxygen. After a thermal treatment consisting of rapid thermal annealing (RTA) and furnace annealing 780 °C 3 h + 1000 °C 16 h in nitrogen the profiles of the oxide precipitate density were investigated. Supersaturations of self-interstitials as function of layer stress were determined by adjusting a modelling results to measured depth profiles of bulk microdefects. The self-interstitial supersaturation generated by RTA at 1250 °C and 1175 °C at the silicon/oxide interface is increasing linearly with increasing layer stress. Values for self-interstitial supersaturation determined on deposited oxide layers after RTA at 1250 °C and 1175 °C are very similar to values published for RTO by Sudo et al. An RTA at 1175°C with a PECVD oxide on top of the wafer is a method to effectively suppress oxygen precipitation in silicon wafers. Nucleation anneals carried out at 650 °C for 4 h and 8 h did not show any effect of PECVD oxide layers on oxide precipitate nucleation.
(52) On the Impact of Strained PECVD Nitride Layers on Oxide Precipitate Nucleation in Silicon
G. Kissinger, D. Kot, I. Costina, M. Lisker
ECS Journal of Solid State Science and Technology 8(9), N125 (2019)
DOI: 10.1149/2.0061909jss, (Future Silicon Wafers)
PECVD nitride layers with different layer stress ranging from about 315 MPa to -1735 MPa were deposited on silicon wafers with similar concentration of interstitial oxygen. After a thermal treatment consisting of nucleation at 650 °C for 4 h or 8 h followed annealing 780 °C 3 h + 1000 °C 16 h in nitrogen, the profiles of the oxide precipitate density were investigated. The binding states of hydrogen in the layers was investigated by FTIR. There is a clear effect of the layer stress on oxide precipitate nucleation. The higher the compressive layer stress is the higher is a BMD peak below the front surface. If the nitride layer is removed after the nucleation anneal the BMD peak below the front surface becomes lower. It is possible to model the BMD peak below the surface by vacancy in-diffusion from the silicon/nitride interface. With increasing duration of the nucleation anneal the vacancy injection from the silicon/nitride interface decreases and with increasing compressive layer stress it increases.
(53) Accurate Graphene-Metal Junction Characterization
M. König, G. Ruhl, A. Gahoi, S. Wittmann, T. Preis, J.-M. Batke, I. Costina, M.C. Lemme
IEEE Journal of the Electron Devices Society 7, 219 (2019)
DOI: 10.1109/JEDS.2019.2891516
A reliable method is proposed for measuring specific contact resistivity (pC) for graphenemetal contacts, which is based on a contact end resistance measurement. We investigate the proposed method with simulations and confirm that the sheet resistance under the metal contact (RSK) plays an important role, as it influences the potential barrier at the graphene-metal junction. Two different complementary metal-oxide-semiconductor-compatible aluminum-based contacts are investigated to demonstrate the importance of the sheet resistance under the metal contact: the difference in R SK arises from the formation of insulating aluminum oxide (Al2O3) and aluminum carbide (Al4C3) interfacial layers, which depends on the graphene pretreatment and process conditions. Auger electron spectroscopy and X-ray photoelectron spectroscopy support electrical data. The method allows direct measurements of contact parameters with one contact pair and enables small test structures. It is further more reliable than the conventional transfer length method when the sheet resistance of the material under the contact is large. The proposed method is thus ideal for geometrically small contacts where it minimizes measurement errors and it can be applied in particular to study emerging devices and materials.
(54) Entwicklung einer Scherkraftmessung zur qualitativen Analyse und Optimierung von Wafer Bonding Prozessen
P. Krüger, M. Wietstruck, G. Kissinger, M. Lisker, A. Krüger, T. Döhler, J. Schäffner, H. Silz, U. Geißler, M. Kaynak
Proc. 8. MikroSystemTechnik Kongress (MST 2019), 722 (2019)
(55) Comparison of Fumed Silica- and Colloidal Silica Slurry for CMP
A. Krüger, M. Lisker
Proc. International Conference on Planarization/CMP Technology (ICPT 2019), 114 (2019)
(56) Polishing of Polysilicon with Highly Diluted Silica Slurry by using SiN Stop Layer
A. Krüger, M. Lisker
Proc. International Conference on Planarization/CMP Technology (ICPT 2019), 116 (2019)
(57) Dual Platform Stepper/Scanner-Based Overlay Evaluation Method
P. Kulse, S. Jätzlau, K. Schulz, M. Wietstruck
Proc. 35th European Mask and Lithography Conference (EMLC 2019), 111770F (2019)
DOI: 10.1117/12.2535629
(58) Simulation and Growth of Graphene for Silicon Microelectronic Applications
G. Lippert, J. Dabrowski, A.P. Becker, M. Lisker, Ch. Wenger, A. Mai, M. Lukosius
Proc. 5th Edition of the European Graphene Forum (EGF 2019), 36 (2019)
(Graphen)
(59) Silicon Nitride Waveguide Coupled 67+ GHz Ge Photodiode for Non-SOI PIC and ePIC Platforms
St. Lischke, D. Knoll, Ch. Mai, A. Hesse, G. Georgieva, A. Peczek, A. Kroh, M. Lisker, D. Schmidt, M. Fraschke, H.H. Richter, A. Krüger, U. Saarow, P. Heinrich, G. Winzer, K. Schulz, P. Kulse, A. Trusch, L. Zimmermann
Proc. 65th IEEE International Electron Devices Meeting (IEDM 2019), 33.2.1 (2019)
(SPEED)
(60) Silicon Nitride Waveguide Coupled 67+ GHz Ge Photodiode for Non-SOI PIC and ePIC Platforms
St. Lischke, D. Knoll, Ch. Mai, A. Hesse, G. Georgieva, A. Peczek, A. Kroh, M. Lisker, D. Schmidt, M. Fraschke, H.H. Richter, A. Krüger, U. Saarow, P. Heinrich, G. Winzer, K. Schulz, P. Kulse, A. Trusch, L. Zimmermann
Proc. 65th IEEE International Electron Devices Meeting (IEDM 2019), 33.2.1 (2019)
(plaCMOS)
(61) Silicon Nitride Waveguide Coupled 67+ GHz Ge Photodiode for Non-SOI PIC and ePIC Platforms
St. Lischke, D. Knoll, Ch. Mai, A. Hesse, G. Georgieva, A. Peczek, A. Kroh, M. Lisker, D. Schmidt, M. Fraschke, H.H. Richter, A. Krüger, U. Saarow, P. Heinrich, G. Winzer, K. Schulz, P. Kulse, A. Trusch, L. Zimmermann
Proc. 65th IEEE International Electron Devices Meeting (IEDM 2019), 33.2.1 (2019)
(PEARLS)
(62) Challenges of Graphene Process Integration in CMOS Technology
M. Lisker, M. Lukosius, R. Lukose, Ch. Wenger, A. Mai
Proc. 236th ECS Meeting (2019)
(GIMMIK)
(63) Challenges of Graphene Process Integration in CMOS Technology
M. Lisker, M. Lukosius, R. Lukose, Ch. Wenger, A. Mai
ECS Transactions 92(4), 201 (2019)
DOI: 10.1149/09204.0201ecst, (GIMMIK)
In this paper we have investigated various steps of graphene device fabrication in a 200 mm wafer Si technology environment. This work has also introduced some of the key process modules which may pave the way to large-scale manufacturing of hybrid graphene-Si components. Although the demonstrated process flow requires further improvements to increase device yield and reduce variability the practical relevance is emphasized by the facts that first the proposed processes and materials enable efficient encapsulation and low-resistance metal-graphene contacts and secondly they are compatible with those used in the large-scale fabrication of Si-based ICs. Among the key factors which are limiting the performance and yield of the graphene are uniformity after transfer, process-related contaminations, and poor adhesion/delamination of graphene during various processing steps. In fact, availability of clean and uniform graphene layers on large diameter wafers (200/300 mm) can be considered as a critical prerequisite to further progress in the process integration of graphene devices in Si technology environment.
(64) Processing and Integration of Graphene in a 200 mm Wafer Si Technology Environment
M. Lisker, M. Lukosius, M. Fraschke, J. Kitzmann, J. Dabrowski, O. Fursenko, P. Kulse, K. Schulz, A. Krüger, J. Drews, S. Schulze, D. Wolansky, A.M. Schubert, J. Katzer, D. Stolarek, I. Costina, A. Wolff, G. Dziallas, F. Coccetti, A. Mai
Microelectronic Engineering 205, 44 (2019)
DOI: 10.1016/j.mee.2018.11.007, (Graphen)
We present insights into processes of cleaning, patterning, encapsulation, and contacting graphene in a 200mm wafer pilot line routinely used for the fabrication of integrated circuits in Si technologies. We demonstrate key process steps and discuss challenges and roadblocks which need to be overcome to enable integration of this material with Si technologies.
(65) Light Effective Hole Mass in Undoped Ge/SiGe Quantum Wells
M. Lodari, A. Tosato, D. Sabbagh, M.A. Schubert, G. Capellini, A. Sammak, M. Veldhorst, G. Scappucci
Physical Review B 100(4), 041304(R) (2019)
DOI: 10.1103/PhysRevB.100.041304
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities (2.0 - 11 x 1011 cm-2) in top-gated field effect transistors by positioning the strained buried Ge channel at different depths of 12 and 44 nm from the surface. From the thermal damping of the amplitude of Shubnikov-de Haas oscillations, we measure a light mass of 0.061me at a density of 2.2 x 1011 cm-2. We confirm the theoretically predicted dependence of increasing mass with density and by extrapolation we find an effective mass of ∼ 0.05me at zero density, the lightest effective mass for a planar platform that demonstrated spin qubits in quantum dots.
(66) Optimized HfO2-based MIM Module Fabrication for Emerging Memory Applications
M.K. Mahadevaiah, M. Lisker, M. Fraschke, St. Marschmeyer, D. Schmidt, Ch. Wenger, E. Perez, A. Mai
Proc. 236th ECS Meeting (2019)
(67) Optimized HfO2-based MIM Module Fabrication for Emerging Memory Applications
M.K. Mahadevaiah, M. Lisker, M. Fraschke, St. Marschmeyer, D. Schmidt, Ch. Wenger, E. Perez, A. Mai
ECS Transactions 92(4), 211 (2019)
DOI: 10.1149/09204.0211ecst
In this work we have investigated the influence of three different fabrication approaches on the electrical behavior of HfO2-based MIM stacks which are most popularly used in RRAM technologies. Two specific MIM layouts are analyzed to verify the electrical performance of the devices. The electrical characterization of the MIM devices are performed on wafer-scale and the characteristics of the devices are compared in terms of leakage currents, breakdown voltages, capacitances and Q-factors. Additionally, the RRAM switching behavior is investigated in terms of forming, reset and set process steps.
(68) Reliability of CMOS Integrated Memristive HfO2 Arrays with Respect to Neuromorphic Computing
M.K. Mahadevaiah, E. Perez, Ch. Wenger, F. Zahari, H. Kohlstedt, A. Grossi, C. Zambelli, P. Olivo, M. Ziegler
Proc. IEEE International Reliability Physics Symposium (IRPS 2019), (2019)
DOI: 10.1109/IRPS.2019.8720552, (NeuroMem)
(69) Photonic Thermal Sensor Integration Towards Electronic-Photonic-IC Technologies
A. Mai, S. Bondarenko, Ch. Mai, P. Steglich
Proc. 49th European Solid-State Device Research Conference (ESSDERC 2019), 254 (2019)
DOI: 10.1109/ESSDERC.2019.8901718, (HOPBIT)
(70) High Performance Electronic Design Education - From Technology Towards High Frequency Chip Sets
A. Mai, P. Scholz, G.G. Fischer, F. Gerfers
Proc. 49th IEEE Frontieres in Education Conference (FIE 2019), (2019)
(MPW)
(71) Adjustment of the BEOL for Back Side Module Integration on Wafer Level in a Silicon Photonic Technology
Ch. Mai, P. Steglich, A. Mai
Proc. 8. MikroSystemTechnik Kongress (MST 2019), 162 (2019)
(HOPBIT)
(72) Electronic-Photonic Wafer-Level Technologies for Fast Prototyping and Application Specific Solutions
A. Mai, P. Steglich, Ch. Mai, St. Simon, R. Scholz
Proc. 41st PhotonIcs & Electromagnetics Research Symposium (PIERS 2019), 123 (2019)
(73) UHF-Dielectrophoresis Crossover Frequency as a New Marker for Discrimination of Glioblastoma Undifferentiated Cells
R. Manczak, S. Saada, T. Provent, C. Dalmay, B. Bessette, G. Begaud, S. Battu, P. Blondy, M.-O. Jauberteau, C. Baristiran Kaynak, M. Kaynak, C. Palego, F. Lallloue, A. Pothier
IEEE Journal of Electromagnetics, RF, and Microwaves in Medicine and Biology 3(3), 191 (2019)
DOI: 10.1109/JERM.2019.2895539, (SUMCASTEC)
This paper introduces the first results of dielectric spectroscopy characterization of glioblastoma cells, measuring their crossover frequencies in the ultra-high-frequency range (above 50 MHz) by dielectrophoresis (DEP) techniques. Experiments were performed on two glioblastoma lines U87-MG and LN18 that were cultured following different conditions, in order to achieve different phenotypic profiles.We demonstrate here that the presented DEP electrokinetic method can be used to discriminate the undifferentiated from the differentiated cells. In this study, microfluidic lab-on-chip systems implemented on bipolarcomplementary oxide semiconductor technology are used allowing single cell handling and analysis. Based on the characterizations of their own intracellular features, both the selected glioblastoma (GBM) cell lines cultured in distinct culture conditions have shown clear differences of DEP crossover frequency signatures compared to the differentiated cells cultured in a normal medium. These results support the concept and validate the efficiency for cell characterization in glioblastoma pathology.
(74) Discrimination Cellulaire par Dielectrophorèse Ultra Haute Fréquence: Etude des Fréquences de Transition de Cellules de Glioblastomes
R. Manczak, S. Saada, T. Provent, C. Dalmay, B. Bessette, G. Begaud, S. Battu, P. Blondy, M.O. Jauberteau, C. Baristiran Kaynak, M. Kaynak, C. Palego, F. Lalloue, A. Pothier
Proc. 21st Journées Nationales Micro-Ondes (JNM 2019), (2019)
(SUMCASTEC)
(75) 64-GBd DP-Bipolar-8ASK Transmission over 120 km SSMF Employing a Monolithically Integrated Driver and MZM in 0.25-µm SiGe BiCMOS Technology
G.R. Mehrpoor, C. Schmidt-Langhorst, B. Wohlfeil, R. Elschner, D. Rafique, R. Emmerich, A. Dochhan, I. Garcia Lopez, P. Rito, D. Petousi, D. Kissinger, L. Zimmermann, C. Schubert, B. Schmauss, M. Eiselt, J.-P. Elbers
Proc. Optical Fiber Communications Conference and Exposition (OFC 2019), Tu2A.5 (2019)
DOI: 10.1364/OFC.2019.Tu2A.5, (SPEED)
We demonstrate 64-GBd signal generation up to bipolar-8-ASK utilizing a single MZM, monolithically integrated with segmented drivers in SiGe. Using polarization multiplexing, 300- Gb/s net data rate transmission over 120 km SSMF is shown.
(76) Multilevel HfO2-Based RRAM Devices for Low-Power Neuromorphic Networks
V. Milo, C. Zambelli, P. Olivo, E. Perez, M.K. Mahadevaiah, O.G. Ossorio, Ch. Wenger, D. Ielmini
APL Materials 7(8), 081120 (2019)
DOI: 10.1063/1.5108650, (NeuroMem)
Training and recognition with neural networks generally require high throughput, high energy efficiency, and scalable circuits to enable artificial intelligence tasks to be operated at the edge, i.e., in battery-powered portable devices and other limited-energy environments. In this scenario, scalable resistive memories have been proposed as artificial synapses thanks to their scalability, reconfigurability, and high-energy efficiency, and thanks to the ability to perform analog computation by physical laws in hardware. In this work, we study the material, device, and architecture aspects of resistive switching memory (RRAM) devices for implementing a 2-layer neural network for pattern recognition. First, various RRAM processes are screened in view of the device window, analog storage, and reliability. Then, synaptic weights are stored with 5-level precision in a 4 kbit array of RRAM devices to classify the Modified National Institute of Standards and Technology (MNIST) dataset. Finally, classification performance of a 2-layer neural network is tested before and after an annealing experiment by using experimental values of conductance stored into the array, and a simulation-based analysis of inference accuracy for arrays of increasing size is presented. Our work supports material-based development of RRAM synapses for novel neural networks with high accuracy and low-power consumption.
(77) Advanced Coherent X-Ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on-Si Electronics and Optoelectronics
G. Niu, S.J. Leake, O. Skibitzki, T. Niermann, J. Carnis, F. Kießling, F. Hatami, E.H. Hussein, M.A. Schubert, P. Zaumseil, G. Capellini, W.T. Masselink, W. Ren, Z.-G. Ye, M. Lehmann, T. Schülli, T. Schroeder, M.-I. Richard
Physical Review Applied 11(6), 064046 (2019)
DOI: 10.1103/PhysRevApplied.11.064046
(78) Operando Diagnostic Detection of Interfacial Oxygen “Breathing” of Resistive Random Access Memory by Bulk-Sensitive Hard X-Ray Photoelectron Spectroscopy
G. Niu, P. Calka, P. Huang, S.U. Sharath, S. Petzold, A. Gloskovskii, K. Fröhlich, Y. Zhao, J. Kang, M.A. Schubert, F. Bärwolf, W. Ren, Z.-G. Ye, E. Perez, Ch. Wenger, L. Alff, T. Schroeder
Materials Research Letters 7(3), 117 (2019)
DOI: 10.1080/21663831.2018.1561535
(79) Characterization of the Demonstrator of the Fast Silicon Monolithic ASIC for the TT-PET Project
L. Paolozzi, Y. Bandi, R. Cardarelli, S. Debieux, Y. Favre, D. Ferrere, D. Forshaw, D. Hayakawa, G. Iacobucci, M. Kaynak, A. Miucci, M. Nessi, E. Ripiccini, H. Rücker, P. Valerio, M. Weber
Journal of Instrumentation 14, P02009 (2019)
DOI: 10.1088/1748-0221/14/02/P02009
(80) Test Beam Measurement of the First Prototype of the Fast Silicon Pixel Monolithic Detector for the TT-PET Project
L. Paolozzi, Y. Bandi, M. Benoit, R. Cardarelli, S. Debieux, D. Forshaw, D. Hayakawa, G. Iacobucci, M. Kaynak, A. Miucci, M. Nessi, O. Ratib, E. Ripiccini, H. Rücker, P. Valerio, M. Weber
Journal of Instrumentation 14(2), P02009 (2019)
DOI: 10.1088/1748-0221/13/04/P04015
The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on state-of-the-art SiGe BiCMOS technology. The first ASIC prototype for the TT-PET was produced and tested in the laboratory and with minimum ionizing particles. The electronics exhibit an equivalent noise charge below 600 e- RMS and a pulse rise time of less than 2 ns, in accordance with the simulations. The pixels with a capacitance of 0:8 pF were measured to have a detection efficiency greater than 99% and, although in the absence of the post-processing, a time resolution of approximately 200 ps.
(81) Characterization of the Interface-Driven 1st Reset Operation in HfO2-based 1T1R RRAM Devices
E. Perez, M.K. Mahadevaiah, C. Zambelli, P. Olivo, Ch. Wenger
Solid State Electronics 159, 51 (2019)
DOI: 10.1016/j.sse.2019.03.054, (NeuroMem)
In this work, the increase on the lament conductivity during the 1st Reset operation, by using the incremental step pulse with verify algorithm, is investigated in HfO2-based 1T1R RRAM devices. A new approach is proposed in order to explain the increase of conductivity by highlighting the crucial roles played by both metal-oxide interfaces. The top metal-oxide interface (HfO2-x/TixOy) plays a role in the forming operation by creating a strong gradient of oxygen vacancies in the hafnium oxide layer. The bottom metal-oxide interface (TixOyNz/HfO2-x) also creates oxygen vacancies, which strengthen the conductive lament tip near to this interface at the beginning of the 1st Reset, leading to the reported conductivity increase. After the 1st Reset operation the conductive lament stabilizes at the bottom interface suppressing this behavior in the subsequent reset operations. By modifying the programming parameters and the temperature, it was con rmed a constant current increase of about 9 μA during the 1st Reset regardless the operation conditions imposed.
(82) Toward Reliable Multi-Level Operation in RRAM Arrays: Improving Post-Algorithm Stability and Assessing Endurance/Data Retention
E. Perez, C. Zambelli, M.K. Mahadevaiah, P. Olivo, Ch. Wenger
IEEE Journal of the Electron Devices Society 7, 740 (2019)
DOI: 10.1109/JEDS.2019.2931769, (NeuroMem)
Achieving a reliable multi-level operation in RRAM arrays is currently a challenging task due to several threats like the post-algorithm instability occurring after the levels placement, the limited endurance, and the poor data retention capabilities at high temperature. In this work we introduced a multi-level variation of the state-of-the-art incremental step pulse with verify algorithm (M-ISPVA) to improve the instability of the LRS levels. This algorithm introduces for the first time the proper combination of current compliance control and program/verify paradigms. The validation of the algorithm for forming and set operations has been performed on 4-kbit RRAM arrays. In addition, we assessed the endurance and the high temperature multi-level retention capabilities after the algorithm application proving a 1k switching cycles stability and a 10 years retention target with temperatures below 100 oC.
(83) Data Retention Investigation in Al:HfO2-based RRAM Arrays by using High-Temperature Accelerated Tests
E. Perez, M.K. Mahadevaiah, C. Zambelli, P. Olivo, Ch. Wenger
Journal of Vacuum Science and Technology B 37(1), 012202 (2019)
(NeuroMem)
In this work the feasibility of using accelerated tests at high temperatures to assess the data retention on RRAM devices was evaluated on Al:HfO2-based 1T1R 4kbit arrays. By annealing the samples at three different temperatures (190, 210, and 230 oC) for 10 h, different distributions of retention failure times were obtained and modelled by using Weibull distributions. Based on the temperature dependency of these distributions, the Arrhenius activation energy of the degradation process was calculated (1.35 eV). In addition, the maximum temperature that guarantee a retention time to failure of 10 years lifetime was extrapolated (120 oC).
(84) 100-Gb/s SiGe Chips für das 6G Mobilfunknetz der Zukunft
U.R. Pfeiffer, P. Rodriguez-Vazquez, J. Grzyb, B. Heinemann
8. MikroSystemTechnik Kongress (MST 2019), 394 (2019)
(85) Filtres SIW en Technologie Silicium pour Applications THz
G. Prigent, A.-L. Franc, M. Wietstruck, M. Kaynak
Proc. 21st Journées Nationales Micro-Ondes (JNM 2019), (2019)
(86) Endoscopic Orientation by Multimodal Data Fusion
S. Pulwer, R. Fiebelkorn, Ch. Zesch, P. Steglich, C. Villringer, F. Villasmunta, E. Gedat, J. Handrich, S. Schrader, R. Vandenhouten
Proc. SPIE MOEMS and Miniaturized Systems XVIII (2019) 10931, 1093114 (2019)
DOI: 10.1117/12.2508470
For the further improved feasibility of endoscopic inspection processes, it is crucial for the user to locate the endoscope inside the machine to be inspected. Therefore we developed a system that provide online information about the position, orientation and viewing direction of the endoscope. This will lead to an automated process that simplifies and optimizes the inspection or manufacturing process. The setup is based on an industrial endoscope with a camera, various MEMS and multimodal data fusion. The software contains algorithms like feature and geometric structure recognition. To minimize the error function and noise, it is necessary to implement mathematical compensation algorithm and make use of Kalman-Filter or Particle-Filter. Based on the calculated results, a visualization of the position and location of the endoscope inside a 3D-CAD model of the inspected machine will be displayed. Test objects (self-defined 3D printed objects, turbine blisk and transmission) were used for tracking the distal end of the endoscope. With these data we could generate a 3D point cloud in real time. Therefore we registered the optical and photometrical characteristics of the system and reconstructed the movement of the endoscope by feature detection and tracking in combination with SLAM (Simultaneous Localization and Mapping). Using the information of the 3D-CAD model of the object and the registered point cloud in combination we were able to improve the stability of the algorithm.
(87) Open-Access Silicon Photonics Platforms in Europe
A. Rahim, J. Goyvaerts, B. Szelag, J.-M. Fedeli, P. Absil, T. Aalto, M. Harjanne, C. Littlejohns, G. Reed, G. Winzer, St. Lischke, L. Zimmermann, D. Knoll, D. Geuzebroek, A. Leinse, M. Geiselmann, M. Zervas, H. Jans, A. Stassen, C. Dominguez, P. Munoz, D. Domenech, A.L. Giesecke, M.C. Lemme, R. Baets
IEEE Journal of Selected Topics in Quantum Electronics 25(5), 8200818 (2019)
DOI: 10.1109/JSTQE.2019.2915949
Offering open-access silicon photonics-based technologies has played a pivotal role in unleashing this technology from research laboratories to industry. Fabless enterprises rely on the open-access of these technologies for their product development. In the last decade, a diverse set of open-access technologies with medium and high technology readiness levels have emerged. This paper provides a review of the open-access silicon and silicon nitride photonic IC technologies offered by the pilot lines of European research institutes and companies. The paper also highlights upcoming features of these platforms and discusses how they address the long-term market needs.
(88) Cryogenic Operation of a Millimeter-Wave SiGe BiCMOS Low-Noise Amplifier
W. Ramirez, H. Forsten, M. Varonen, R. Reeves, M. Kantanen, M. Kaynak, S. Torres
IEEE Microwave and Wireless Components Letters 29(6), 403 (2019)
(89) Optimization and Performance Limits of a 64-QAM Wireless Communication Link at 220-260 GHz in a SiGe HBT Technology
P. Rodriguez-Vazquez, J. Grzyb, B. Heineman, U.R. Pfeiffer
Proc. IEEE Radio and Wireless Symposium (RWS 2019), (2019)
DOI: 10.1109/RWS.2019.8714283
(90) A 16-QAM 100-Gb/s 1-M Wireless Link With an EVM of 17% at 230 GHz in an SiGe Technology
P. Rodriguez-Vazquez, J. Grzyb, B. Heinemann, U.R. Pfeiffer
IEEE Microwave and Wireless Components Letters 29(4), 297 (2019)
DOI: 10.1109/LMWC.2019.2899487
This letter presents a 1-m wireless link established with a set of fundamentally operated Tx/Rx direct-conversion in-phase and quadrature (IQ) radio frequency (RF) front-end modules in a 0.13-μm SiGe HBT technology featuring full chipon-board packaging. Using a 16-quadrature amplitude modulation, data rates from 20 to 100 Gb/s with an error vector magnitude from 7% to 17% were achieved at a 1-m distance. Thanks to the new mixer-first Rx, the maximum data rate improved from 90 to 100 Gb/s compared with our previous work using the amplifier-first Rx. The peak performance was reached at 230 GHz. The Tx operates at a 3.5 dB backoff from Psat showing a 3-dB RF bandwidth (BW) of 28 GHz, a Pout of 5 dBm, and an IQ imbalance below 0.7 dB. The Rx features a peak conversion gain of 8 dB, a single-sideband noise figure of 14 dB, a 3-dB RF BW of 26 GHz, and an IQ imbalance below 1 dB. This letter also provides an analysis of the RF front-end imperfections related to the large link BW.
(91) Device Architectures for High-Speed SiGe HBTs
H. Rücker, B. Heinemann
Proc. IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2019), (2019)
DOI: 10.1109/BCICTS45179.2019.8972757, (Taranto)
(92) Implémentation en Technologie Intégrée de Filtres à Fréquence Centrale Accordable en Bande D et à Bande Passante Relative Maintenue
P. Rynkiewicz, A.-L. Franc, F. Coccetti, M. Wietstruck, M. Kaynak, G. Prigent
Proc. 21st Journées Nationales Micro-Ondes (JNM 2019), (2019)
(93) Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology
A. Sammak, D. Sabbagh, N.W. Hendrickx, M. Lodari, B.P. Wuetz, A. Tosato, L. Yeoh, M. Bollani, M. Virgilio, M.A. Schubert, P. Zaumseil, G. Capellini, M. Veldhorst, G. Scappucci
Advanced Functional Materials 29(14), 1807613 (2019)
DOI: 10.1002/adfm.201807613
(94) Synthesis of Armchair Graphene Nanoribbons on Germanium-on-Silicon
V. Saraswat, Y. Yamamoto, H.J. Kim, R.M. Jacobberger, K.R. Jinkins, A.J. Way, N.P. Guisinger, M.S. Arnold
ACS Journal of Physical Chemistry C: Nanomaterials and Interfaces 123(30), 18445 (2019)
DOI: 10.1021/acs.jpcc.9b04390
(95) CVD Synthesis of Armchair Graphene Nanoribbons on Ge/Si(001)
V. Saraswat, Y. Yamamoto, H.J. Kim, R.M. Jacobberger, K.R. Jinkins, A.J. Way, N.P. Guisinger, M.S. Arnold
ECS Transactions 93(1), 133 (2019)
DOI: 10.1149/09301.0133ecst
(96) Optimization of a BEOL Aluminium Deposition Process Enabling Wafer Level Al-Al Thermo-Compression Bonding
S. Schulze, M. Wietstruck, M. Fraschke, P. Kerepesi, H. Kurz, B. Rebhan, M. Kaynak
Proc. 69th IEEE Electronic Components and Technology Conference (ECTC 2019), 218 (2019)
DOI: 10.1109/ECTC.2019.00040
(97) Novel Concept for VCSEL Enhanced Silicon Photonic Coherent Transceiver
P.M. Seiler, G. Ronniger, U. Troppenz, A. Sigmund, M. Moehrle, A. Peczek, L. Zimmermann
AIP Advances 9(10), 105114 (2019)
DOI: 10.1063/1.5120019
We present a novel concept for an integrated silicon photonic coherent transceiver using vertical-emitting laser sources at 1550 nm. In a state of the art external modulation configuration, we deploy a VCSEL on the transmit and a HCSEL on the receive side. We demonstrate the feasibility of this approach by externally modulating the VCSEL with QPSK at up to 28 Gbaud. We also perform experiments with the VCSEL-HCSEL configuration in a slave-master optical injection locking setup for future data center interconnects. The results show stable locking conditions and the VCSEL is detuned to perform predominant phase modulation. To the best of our knowledge, this is the first time direct phase modulation of a VCSEL under optical injection locking was demonstrated using two vertically emitting laser sources as master - and slave laser.
(98) Two-Element Antenna-Acitve Phase Shifter Packaging at 77 GHz
M. Seyyedesfahlan, E. Özturk, M. Kaynak, I. Tekin, A.K. Skrivervik
Proc. 13th European Conference on Antennas and Propagation (EuCAP 2019), (2019)
(99) Two-Element Antenna-Acitve Phase Shifter Packaging at 77 GHz
M. Seyyedesfahlan, E. Özturk, M. Kaynak, I. Tekin, A.K. Skrivervik
Proc. 13th European Conference on Antennas and Propagation (EuCAP 2019), (2019)
(IHP-Sabanci Joint Lab)
(100) Radiation Tolerant RF-LDMOS Transistors, Integrated into a 0.25µm SiGe-BICMOS Technology
R. Sorge, J. Schmidt, F. Reimer, Ch. Wipf, F. Korndörfer, R. Pliquett, R. Barth
Nuclear Instruments and Methods in Physics Research Section A 924, 166 (2019)
DOI: 10.1016/j.nima.2018.07.075, (strahlungsfeste Schaltkeise (Radiation))
(101) On-Chip Dispersion Measurement of the Quadratic Electro-Optic Effect in Nonlinear Optical Polymers using a Photonic Integrated Circuit Technology
P. Steglich, C. Villringer, B. Dietzel, Ch. Mai, S. Schrader, M. Casalboni, A. Mai
IEEE Photonics Journal 11(3), 4900510 (2019)
DOI: 10.1109/JPHOT.2019.2917665, (HOPBIT)
A novel method to determine the dispersion of the quadratic electro-optic effect in nonlinear optical dyes by using a silicon-on-insulator micro-ring resonator is presented. The micro-ring consists of a silicon slot waveguide enabling large electric field strength at low voltages. The dispersion of a linear conjugated dye is determined by using a two-level model for the off-resonant spectral region. Exemplary, we measure the dispersion of the nonlinear optical dye disperse red 1 (DR1) doped in a poly(methyl methacrylate) (PMMA) matrix for the telecommunication wavelength band around 1550 nm (optical C-band).
(102) Silicon-Organic Hybrid Photonics: Integration of Electro-Optical Polymers in a Photonic Integrated Circuit Technology
P. Steglich, Ch. Mai, S. Schrader, A. Mai
Proc. 236th ECS Meeting (2019), 1181 (2019)
(HOPBIT)
(103) Introductory Chapter: Fiber Optics
P. Steglich, F. De Matteis
Fiber Optics: From Fundamentals to Industrial Approach, 1st Edition, Editors: P. Steglich, F. De Matteis, Chapter 1. Introductory Chapter: Fiber Optics, IntechOpen, 1 (2019)
DOI: 10.5772/intechopen.85495, (HOPBIT)
Optical Fibers in metrology, telecommunications, sensors, manufacturing and health science have gained massive research interest. It covers materials, components and systems across the application spectrum, from interferometers for spectroscopy to fiber optic applications in medicine. This book aims to presents a collection of recent advances in fiber optics and provides a platform for practicing researchers, academics, PhD students, and other scientists to review, plan, design, analyze, evaluate, and demonstrate experimental results. This book welcomes the current progress and latest breakthroughs in emergent applications of fiber optics and specialty fibers. This includes recent developments in optical fiber communications and fiber sensors as well as the design, simulation and fabrication of novel fiber concepts.
(104) Functionalized Materials for Integrated Photonics: Hybrid Integration of Organic Materials in Silicon-Based Photonic Integrated Circuits for Advanced Optical Modulators and Light-Sources
P. Steglich, Ch. Mai, S. Bondarenko, C. Villringer, S. Pulwer, C. Zesch, B. Dietzel, S. Schrader, F. Vitale, F. De Matteis, M. Casalboni, A. Mai
Proc. 41st Progress In Electromagnetics Research Symposium (PIERS 2019), 1896 (2019)
(HOPBIT)
Photonic integrated circuits (PICs) based on silicon-on-insulator wafers have been subject of intense research efforts due to the perspective of a compact photonic integration platform with high integration density, mass-production and compatibility with the well-established CMOS technology. Potential applications lie in the fields of communication technology and optical sensing. Unfortunately, silicon has some drawbacks in terms of material properties. For example, light emitting devices based on silicon are difficult to realize because it is an indirect transition material. Moreover, silicon does not show efficient electro-optic effects but significant optical losses due to two-photon absorption and free-electron absorption.
Therefore, functionalities of current silicon photonic platforms are expanded by using hybrid integration technologies, such as micro-transfer printing, wafer- and die-bonding. An approach to overcome material deficiencies is the heterogeneous integration of assisting materials using low-temperature deposition methods. Such materials are, for example, organic nonlinear optical materials, indium-phosphide, barium titanium oxide, silicon-nitride, germanium-tin.
In this work, we present a novel fabrication process to integrate functionalized organic materials into a silicon-based PIC-technology. This advanced fabrication process enables the development of functionalized photonic devices such as high-speed electro-optical modulators and electronically or optically pumped laser-sources. The devices are based on ring resonator structures and are fabricated in a 0.25 µm SiGe BiCMOS pilot line using 200 mm silicon-on-insulator wafers. This approach gives perspective for monolithically hybrid-integrated photonic devices in an electronic PIC (EPIC)-technology.
As proof of concept, we have developed an electro-optical silicon-organic hybrid modulator based on a slot waveguide ring resonator. Supported by FEM-simulations, the slot waveguide is optimized for a maximized overlap between electrical and optical field. The slot waveguide structure provides an increased electric field strength due to the small gap between two electrodes. This gap ranges from 60 nm to 200 nm and allows for radio-frequency signal generation using complementary metal-oxide-semiconductor (CMOS)-compatible voltages.
As organic material we use the nonlinear optical dye disperse red 1 (DR1) doped in PMMA. We report on the characterization of the organic material by means of spectral ellipsometry and photometry to predict device performance and to compare our estimations with experimental results. In particular, we show that the device tunability of the fabricated ring resonator is not affected by optical losses, which reflects the off-resonant nature of the electro-optical response of DR1 at an operation wavelength of 1550 nm.
The presented fabrication process is a major step towards monolithic hybrid-integrated photonic devices using functionalized organic materials in a PIC-technology.
(105) Silicon-Organic Hybrid Photonic Devices in a Photonic Integrated Circuit Technology
P. Steglich, Ch. Mai, A. Mai
ECS Journal of Solid State Science and Technology 8(11), Q217 (2019)
DOI: 10.1149/2.0221911jss, (HOPBIT)
In this work, we present recent results on the hybrid integration of electro-optical organic
materials in a photonic integrated circuit (PIC) technology. We review some of the identified
challenges regarding process compatibility and present experimental results on the integration of organic materials in a PIC technology using a 0.25 μm SiGe BiCMOS pilotline. Here, we are focusing on electro-optical applications towards high-speed modulators with ultra-low energy consumption.
(106) Optical Biosensors Based on Silicon-On-Insulator Ring Resonator: A Review
P. Steglich, M. Hülsemann, B. Dietzel, A. Mai
Molecules: A Journal of Synthetic Chemistry and Natural Product Chemistry 24(3), 519 (2019)
DOI: 10.3390/molecules24030519, (HOPBIT)
(107) Silicon-Organic Hybrid Photonics: Integration of Electro-Optical Polymers in a Photonic Integrated Circuit Technology
P. Steglich, Ch. Mai, C. Villringer, B. Dietzel, S. Schrader, A. Mai
ECS Transactions 92(4), 187 (2019)
DOI: 10.1149/09204.0187ecst, (HOPBIT)
(108) Mid-Infrared Optical Characterization of thin SiNx Membranes
M. Stocchi, D. Mencarelli, L. Pierantoni, D. Kot, M. Lisker, A. Göritz, C. Baristiran Kaynak, M. Wietstruck, M. Kaynak
Applied Optics 58(19), 5233 (2019)
DOI: 10.1364/AO.58.005233, (IHP-Sabanci Joint Lab)
The investigation of the optical constants (e.g. the refractive index n and the extinction coeffcient k) has been performed in the Mid-InfraRed (MIR) spectrum for various Silicon Nitride (SiNx) con gurations. By exploiting the Transfer Matrix Method (TMM) formulation, photometric measurements of transmission and reflection have been used for iteratively calculating the optical parameters of interest. For ensuring the reliability of the latter, the same material from which these parameters were extracted from was deposited for three different thicknesses, e.g. 600, 200 and 100 nm. While the former is optically characterized, the remaining two are used for testing purposes. For each experimental/calculated comparison, the average (made over the whole considered spectrum interval) of the relative error never exceeds 1.5%, which ensures the correctness of the given n and k. For the sake of completeness, a detailed analysis of the intrinsic limitations arising from the very nature of the method will also be conducted.
(109) Advanced Numerical Investigation of the Heat Flux in an Array of Microbolometers
M. Stocchi, D. Mencarelli, L. Pierantoni, A. Göritz, C. Baristiran Kaynak, M. Wietstruck, M. Kaynak
Scientific Reports 9, 11078 (2019)
DOI: 10.1038/s41598-019-47472-2
The investigation of the thermal properties of an array of microbolometers has been carried out by mean of two independent numerical analysis, respectively the Direct-Simulation Monte Carlo (DSMC) and the classic diffusive approach of the Fourier’s equation. In particular, the thermal dissipation of a hot membrane placed in a low-pressure cavity has been studied for different values of the temperature of the hot body and for different values of the pressure of the environment. The results for the heat flux derived from the two approaches have then been compared and discussed.
(110) Temperature and Gate Effects on Contact Resistance and Mobility in Graphene Transistors by TLM and Y-Function Methods
F. Urban, G. Lupina, A. Grillo, N. Martucciello, A. Di Bartolomeo
Nano Express
zu finden unter: https://arxiv.org/abs/1912.04623
(Graphen)
(111) A Monolithic ASIC Demonstrator for the Thin Time-of-Flight PET Scanner
P. Valerio, R. Cardarelli, G. Iacobucci, L. Paolozzi, E. Ripiccini, D. Hayakawa, S. Bruno, A. Caltabianob, M. Kaynak, H. Rücker, M. Nessi
Journal of Instrumentation 14, P07013 (2019)
DOI: 10.1088/1748-0221/14/07/P07013
(112) PMMA Filled Through-Silicon Vias (TSVs) and Back Etch Process Controlled by Plasma Emission Interferometry
F. Villasmunta, P. Steglich, Ch. Mai, F. Heinrich, V. Ksianzou, S. Schrader, A. Mai,
Proc. 8. MikroSystemTechnik Kongress (MST 2019), (2019)
(HOPBIT)
(113) Optical Transmitter Design in a SiGe BiCMOS Photonic Platform
K. Voigt, Ch. Mai, D. Petousi, A. Peczek, D. Knoll, St. Lischke, G. Winzer, L. Zimmermann
Proc. Asia Communications and Photonics Conference (ACPC 2019), T3H.2 (2019)
(114) Inherent-Stochastic Learning in CMOS Integrated HfO2 Arrays for Neuromorphic Computing
Ch. Wenger, F. Zahari, M.K. Mahadevaiah, E. Perez, I. Beckers, H. Kohlstedt, M. Ziegler
IEEE Electron Device Letters 40(4), 639 (2019)
DOI: 10.1109/LED.2019.2900867, (NeuroMem)
(115) SiGe BiCMOS Technology with Embedded Through-Silicon Vias and Interposer Fan-Out Wafer-Level Packaging Platform
M. Wietstruck, St. Marschmeyer, S. Schulze, M. Kaynak
Proc. 1st European Microwave Conference in Central Europe (EuMCE 2019), 332 (2019)
(116) Al-Al Direct Bonding with Sub-µm Alignment Accuracy for Millimeter Wave SiGe BiCMOS Wafer Level Packaging and Heterogeneous Integration
M. Wietstruck, S. Schulze, B. Rebhan, P. Kerepesi, H. Kurz, G. Silberer, J. Meiler, S. Tolunay Wipf, Ch. Wipf, M. Kaynak
Proc. 69th IEEE Electronic Components and Technology Conference (ECTC 2019), 942 (2019)
DOI: 10.1109/ECTC.2019.00147
(117) Recent Developments on SiGe BiCMOS Technologies for mm-Wave and THz Applications
M. Wietstruck, St. Marschmeyer, S. Schulze, S. Tolunay Wipf, Ch. Wipf, M. Kaynak
Proc. IEEE MTT-S International Microwave Symposium (IMS 2019), 1126 (2019)
DOI: 10.1109/MWSYM.2019.8701049
(118) RF-MEMS Based V-Band Impedance Tuner Driven by Integrated High-Voltage LDMOS Switch Matrix and Charge Pump
Ch. Wipf, R. Sorge, S. Tolunay Wipf, A. Göritz, A. Scheit, D. Kissinger, M. Kaynak
Proc. 20th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2019), (2019)
DOI: 10.1109/SIRF.2019.8709116, (LDMOS)
To demonstrate a fully integrated RF-MEMS based system including HV generation and switching circuitry, a V-Band (40 – 75 GHz) single-stub impedance tuner comprising four RF-MEMS switches, a 40V charge pump, and LDMOS based HV switches is developed in a 0.25μm SiGe-BiCMOS technology. The chip size of the designed impedance tuning circuit enables the integration into an on-wafer RF-probe used for noise parameter and load-pull measurements. With the embedded high-voltage generation and switching circuitry the wiring effort, which is necessary to control the integrated RF-MEMS based impedance tuning chip, can be drastically reduced. The operation of the on-chip high-voltage generation and switching circuitry is demonstrated by the measured S-parameters for various combinations of activated RF-MEMS switches. The four integrated RF-MEMS switches enable 16 impedance states in the frequency range between 40 GHz and 60 GHz.
(119) RF-MEMS Based V-Band Impedance Tuner Driven by Integrated High-Voltage LDMOS Switch Matrix and Charge Pump
Ch. Wipf, R. Sorge, S. Tolunay Wipf, A. Göritz, A. Scheit, D. Kissinger, M. Kaynak
Proc. 20th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2019), (2019)
DOI: 10.1109/SIRF.2019.8709116, (MEMS Integration)
To demonstrate a fully integrated RF-MEMS based system including HV generation and switching circuitry, a V-Band (40 – 75 GHz) single-stub impedance tuner comprising four RF-MEMS switches, a 40V charge pump, and LDMOS based HV switches is developed in a 0.25μm SiGe-BiCMOS technology. The chip size of the designed impedance tuning circuit enables the integration into an on-wafer RF-probe used for noise parameter and load-pull measurements. With the embedded high-voltage generation and switching circuitry the wiring effort, which is necessary to control the integrated RF-MEMS based impedance tuning chip, can be drastically reduced. The operation of the on-chip high-voltage generation and switching circuitry is demonstrated by the measured S-parameters for various combinations of activated RF-MEMS switches. The four integrated RF-MEMS switches enable 16 impedance states in the frequency range between 40 GHz and 60 GHz.
(120) Horizontal DEMA Attack as the Criterion to Select the Best Suitable EM Probe
Ch. Wittke, I. Kabin, D. Klann, Z. Dyka, A. Datsuk, P. Langendörfer
zu finden unter: http://eprint.iacr.org/
(Total Resilience)
Implementing cryptographic algorithms in a tamper resistant way is an extremely complex task as the algorithm used and the target platform have a significant impact on the potential leakage of the implementation. In addition the quality of the tools used for the attacks is of importance. In order to evaluate the resistance of a certain design against electromagnetic emanation attacks – as a highly relevant type of attacks – we discuss the quality of different electromagnetic (EM) probes as attack tools. In this paper we propose to use the results of horizontal attacks for comparison of measurement setup and for determining the best suitable instruments for measurements. We performed horizontal differential electromagnetic analysis (DEMA) attacks against our ECC design that is an im-plementation of the Montgomery kP algorithm for the NIST elliptic curve B-233. We experimented with 7 different EM probes under same conditions: attacked FPGA, design, inputs, measurement point and measurement equipment were the same, excepting EM probes. The used EM probe influences the success rate of performed attack significantly. We used this fact for the comparison of probes and for determining the best suitable one.
(121) Nickel Texture Adjustment on Si and Ge and its Impact on Nickel Silicide and Germanide
D. Wolansky, P. Zaumseil, M.H. Zoellner, S. Schulze
ECS Transactions 93(1), 97 (2019)
DOI: 10.1149/09301.0097ecst, (Taranto)
(122) Ge/SiGe Multi Quantum Well Fabrication by Using Reduced Pressure Chemical Vapor Deposition
Y. Yamamoto, O. Skibitzki, M.A. Schubert, M. Scuderi, F. Reichmann, M.H. Zoellner, G. Capellini, B. Tillack
Proc. 51st International Conference on Solid State Devices and Materials (SSDM 2019), 293 (2019)
(FLASH)
(123) Group IV Heteroepitaxy for Advanced Electronic Devices Integrated in BiCMOS Technology
Y. Yamamoto, H. Rücker, B. Heinemann, St. Lischke, C. Baristiran Kaynak, M. Kaynak, B. Tillack
ECS Transactions 93(1), 1 (2019)
DOI: 10.1149/09301.0001ecst
(124) Self-Ordered Ge Nanodot Fabrication by using Reduced Pressure Chemical Vapor Deposition
Y. Yamamoto, Y. Itoh, P. Zaumseil, M.A. Schubert, G. Capellini, K. Washio, B. Tillack
ECS Journal of Solid State Science and Technology 8(3), P190 (2019)
DOI: 10.1149/2.0091903jss
(125) Influence of Annealing Condition on Threading Dislocation Density of Ge Grown by RPCVD
Y. Yamamoto, P. Zaumseil, M.A. Schubert, B. Tillack
ECS Transactions 93(1), 87 (2019)
DOI: 10.1149/09301.0087ecst
(126) Group IV Heteroepitaxy Processes for Advanced Electronics Devices Integration into BiCMOS Technology
Y. Yamamoto, H. Rücker, B. Heinemann, St. Lischke, C. Baristiran Kaynak, M. Kaynak, B. Tillack
Proc. 8th International Symposium on Control of Semiconductor Interfaces (ISCSI 2019), 89 (2019)
(127) A Silicon Based 4.5-GHz Near-Field Capacitive Sensing Imaging Array
J. Zhou, R. Al Hadi, W. Qiao, Y. Zhao, C. Chen, M. Kaynak, X. Cheng, J.C M. Hwang, M.-C.F. Chang
Proc. IEEE MTT-S International Microwave Symposium (IMS 2019), 797 (2019)
DOI: 10.1109/MWSYM.2019.8700976
(128) Compact Manganite-Graphene Magnetoresistive Sensor
N. Zurauskiene, R. Lukose, S. Balevicius, V. Stankevic, S. Kersulis, V. Plausinaitiene, M. Vagner, R. Navickas
IEEE Magnetics Letters 10, 8105605 (2019)
DOI: 10.1109/LMAG.2019.2940172
A magnetic field sensor based on a manganite/Al2O3-substrate/three-layer graphene structure operating in the range of 0.1–20 T was designed and fabricated. The La0.9Sr0.1 Mn1.2O3 (LSMO) manganite film and graphene layers were prepared on the opposite sides of polycrystalline Al2O3 substrate, which enabled scaling of the effective volume of the device to about 0.16 mm3. The combination of two materials—graphene with positive magnetoresistance (MR) and manganite with negative MR—led to a significant increase of the response signal and sensitivity compared with individual graphene or manganite sensors. This was achieved by increasing the MR of the individual manganite and graphene elements. The MR of LSMO was increased by using pulsed-injection metal-organic chemical vapor deposition based on two precursor sources with tunable vapor supersaturation and growth rate. The MR of three-layer graphene was optimized by changing the width/length ratio of the rectangular planar configuration and scaling the dimensions from millimeters to few hundred micrometers. The result was a maximal sensitivity of 72 mV/VT in the field range of 1–3 T.
